A Quasi-Analytical Model for Double-Gate Tunneling Field-Effect Transistors

2012 ◽  
Vol 33 (10) ◽  
pp. 1468-1470 ◽  
Author(s):  
Andrew Pan ◽  
Chi On Chui
Keyword(s):  
Analytical Model ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Double Gate ◽  
Tunneling Field Effect Transistors ◽  
Gate Tunneling

Design optimization of vertical double-gate tunneling field-effect transistors

2012 ◽  
Vol 61 (10) ◽  
pp. 1679-1682 ◽  
Author(s):  
Young Jun Yoon ◽  
Sung Yun Woo ◽  
Jae Hwa Seo ◽  
Jae Sung Lee ◽  
Yun Soo Park ◽  
...  
Keyword(s):  
Design Optimization ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Double Gate ◽  
Tunneling Field Effect Transistors ◽  
Gate Tunneling

scholarly journals Study on Single Event Effect Simulation in T-Shaped Gate Tunneling Field-Effect Transistors

Micromachines ◽  
2021 ◽  
Vol 12 (6) ◽  
pp. 609
Author(s):  
Chen Chong ◽  
Hongxia Liu ◽  
Shulong Wang ◽  
Shupeng Chen ◽  
Haiwu Xie
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Reducing Power ◽  
Heavy Ion ◽  
Transient Current ◽  
Future Research ◽  
Single Event ◽  
Single Event Effect ◽  
Tunneling Field Effect Transistors ◽  
Gate Tunneling

Tunneling field-effect transistors (TFETS) can reduce the subthreshold swing (SS) to below 60 mV/decade due to their conduction mechanism with band-to-band tunneling (BTBT), thereby reducing power consumption. T-shaped gate tunneling field-effect transistors (TGTFET) adapt double source and T-shaped gates to enhance the on-state current and to generate the tunneling probability. In this paper, TGTFET subjected to heavy-ion irradiation is studied by technology computer-aided design (TCAD) simulation for the first time. The results show that as the drain bias and linear energy transfer (LET) increase, the transient current and collected charge also increase. When LET = 100 MeV·cm2/mg and Vd = 0.5 V, the transient current of TGTFET is as high as 10.63 mA, which is much larger than the on-state current. This means that TGTFET is more sensitive to single-event effect (SEE) than FDSOI. By simulating a heavy-ion strike on different locations in TGTFET, the tunneling junction is the most sensitive region of SEE. This provides guidance for future research on the antiradiation application of TFET-based devices.

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