A Numerical Study on Graphene Nanoribbon Heterojunction Dual-Material Gate Tunnel FET

IEEE Electron Device Letters ◽

10.1109/led.2016.2597155 ◽

2016 ◽

Vol 37 (10) ◽

pp. 1354-1357 ◽

Author(s):

Yawei Lv ◽

Qijun Huang ◽

Hao Wang ◽

Sheng Chang ◽

Jin He

Keyword(s):

Numerical Study ◽

Graphene Nanoribbon ◽

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Dual material gate doping-less tunnel FET with hetero gate dielectric for enhancement of analog/RF performance

Journal of Semiconductors ◽

10.1088/1674-4926/38/2/024001 ◽

2017 ◽

Vol 38 (2) ◽

pp. 024001 ◽

Author(s):

Sunny Anand ◽

R. K. Sarin

Keyword(s):

Gate Dielectric ◽

Rf Performance ◽

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Mathematical modeling insight of hetero gate dielectric-dual material gate-GAA-tunnel FET for VLSI/analog applications

Microsystem Technologies ◽

10.1007/s00542-016-2872-9 ◽

2016 ◽

Vol 23 (9) ◽

pp. 4091-4098 ◽

Author(s):

Jaya Madan ◽

R. S. Gupta ◽

Rishu Chaujar

Keyword(s):

Mathematical Modeling ◽

Gate Dielectric ◽

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High on-current and low threshold GaSb-InAs heterostructure dual-material DG tunnel-FET

2017 IEEE Region 10 Humanitarian Technology Conference (R10-HTC) ◽

10.1109/r10-htc.2017.8289006 ◽

2017 ◽

Author(s):

Md. Abdullah-Al-Kaiser ◽

Dip Joti Paul ◽

Quazi D. M. Khosru

Keyword(s):

Low Threshold ◽

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Performance Improvement in Nanoscale Ge–GaAs Heterojunction Junctionless Tunnel FET Using a Dual Material Gate

Journal of Low Power Electronics ◽

10.1166/jolpe.2014.1348 ◽

2014 ◽

Vol 10 (3) ◽

pp. 354-360 ◽

Author(s):

Bahniman Ghosh ◽

Shibir Basak ◽

Pranav Kumar Asthana

Keyword(s):

Performance Improvement ◽

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Numerical study on graphene nanoribbon quantum well-in-well interband and intersubband photodetector

2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO) ◽

10.1109/nano.2015.7389010 ◽

2015 ◽

Author(s):

Atanu Kumar Saha ◽

Gobinda Saha ◽

A.B.M. Harun-ur Rashid

Keyword(s):

Quantum Well ◽

Numerical Study ◽

Graphene Nanoribbon

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Analytical Modeling of Dual Material Gate All around Stack Architecture of Tunnel FET

2016 29th International Conference on VLSI Design and 2016 15th International Conference on Embedded Systems (VLSID) ◽

10.1109/vlsid.2016.74 ◽

2016 ◽

Author(s):

N.B. Balamurugan ◽

G. Lakshmi Priya ◽

S. Manikandan ◽

G. Srimathi

Keyword(s):

Analytical Modeling ◽

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Numerical study on dual material gate nanowire tunnel field-effect transistor

2012 IEEE International Conference on Electron Devices and Solid State Circuit (EDSSC) ◽

10.1109/edssc.2012.6482880 ◽

2012 ◽

Author(s):

Aixi Zhang ◽

Jinhe Mei ◽

Lining Zhang ◽

Hongyu He ◽

Jin He ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Numerical Study ◽

Effect Transistor ◽

Tunnel Field Effect Transistor ◽

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A bilayer graphene nanoribbon field-effect transistor with a dual-material gate

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2015.06.014 ◽

2015 ◽

Vol 39 ◽

pp. 636-640 ◽

Author(s):

Hadi Owlia ◽

Parviz Keshavarzi

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Bilayer Graphene ◽

Graphene Nanoribbon ◽

Effect Transistor ◽

Bilayer Graphene Nanoribbon ◽

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An extensive electrostatic analysis of dual material gate all around tunnel FET (DMGAA-TFET)

Advances in Natural Sciences Nanoscience and Nanotechnology ◽

10.1088/2043-6262/7/2/025012 ◽

2016 ◽

Vol 7 (2) ◽

pp. 025012 ◽

Author(s):

S Dash ◽

G P Mishra

Keyword(s):

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Impact of interface charges on the performance of Dual Material Double Gate tunnel FET

2016 9th International Conference on Electrical and Computer Engineering (ICECE) ◽

10.1109/icece.2016.7853883 ◽

2016 ◽

Author(s):

Samantha Lubaba Noor ◽

Samia Safa ◽

Md. Ziaur Rahman Khan

Keyword(s):

Double Gate ◽

Interface Charges ◽

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