Au/SnS2/Al Schottky structure for high detectivity and low dark current visible light detector

2021 ◽  
pp. 1-1
Author(s):  
Yongkai Jing ◽  
Chao Fan ◽  
Xia An ◽  
Zhe Liu ◽  
Chun Sun ◽  
...  
Keyword(s):  
Visible Light ◽  
Dark Current ◽  
Light Detector ◽  
Schottky Structure

A High Performance UV Photodetector from Thin Film Diamond

1995 ◽  
Vol 416 ◽  
Author(s):  
Robert D. Mckeag ◽  
Michael D. Whitfield ◽  
Simon Sm Chan ◽  
Lisa Ys Pang ◽  
Richard B. Jackman
Keyword(s):  
Thin Film ◽  
Visible Light ◽  
Quantum Efficiency ◽  
Dark Current ◽  
External Quantum Efficiency ◽  
High Performance ◽  
Uv Light ◽  
High Sensitivity ◽  
Uv Photodetector ◽  
Deep Uv

ABSTRACTThin film diamond has been used to fabricate a photodetector which displays high sensitivity to deep UV light, with an external quantum efficiency of greater than one, a dark current of less than 0.1nA and which is near ‘blind’ to visible light.

Electrical Properties of Photoconductor Using Ga2O3/CuGaSe2 Heterojunction

2013 ◽  
Vol 1538 ◽  
pp. 391-395
Author(s):  
Kenji Kikuchi ◽  
Shigeyuki Imura ◽  
Kazunori Miyakawa ◽  
Misao Kubota ◽  
Eiji Ohta
Keyword(s):  
Visible Light ◽  
Dark Current ◽  
Carrier Density ◽  
Depletion Region ◽  
Image Sensors ◽  
High Quantum Efficiency ◽  
Light Region ◽  
Cigs Thin Film ◽  
Hole Blocking Layer ◽  
High Absorption Coefficient

ABSTRACTThe feasibility of using a photoconductor with a Ga2O3/CuGaSe2 heterojunction for visible light sensors was investigated. CIGS chalcopyrite semiconductors have both a high absorption coefficient and high quantum efficiency. However, their dark current is too high for image sensors. In this study, we applied gallium oxide (Ga2O3) as a hole-blocking layer for CIGS thin film to reduce the dark current. Experimental results showed that the dark current was drastically reduced, and an avalanche multiplication phenomenon was observed at an applied voltage of over 6 V. However, this structure had sensitivity only in the ultraviolet light region because its depletion region was almost completely spread in the Ga2O3 layer since the carrier density of the Ga2O3 layer was much lower than that of the CIGS layer. These results indicate that the Ga2O3/CuGaSe2 heterojunction has potential for use in visible light sensors but that we also need to increase the carrier density of the Ga2O3 layer to shift the depletion region to the CIGS film.

scholarly journals High Performance CMOS Light Detector with Dark Current Suppression in Variable-Temperature Systems

Sensors ◽  
2016 ◽  
Vol 17 (12) ◽  
pp. 15 ◽  
Author(s):  
Wen-Sheng Lin ◽  
Guo-Ming Sung ◽  
Jyun-Long Lin
Keyword(s):  
Dark Current ◽  
High Performance ◽  
Variable Temperature ◽  
Light Detector

scholarly journals Recognizing Plant Tension in Plantations by use of UAVs Visible Light Detector. (Case Study: Nekazalemrood Forestry Plan)

2019 ◽  
Vol 7 (13) ◽  
pp. 20-28
Author(s):  
Alireza Hoseinpour ◽  
jafar oladi ◽  
hasan Akbari ◽  
Mohammadreza sarajian ◽  
◽  
...  
Keyword(s):  
Visible Light ◽  
Light Detector

Electrical Properties of Ga2O3:Sn/CIGS Hetero-junction

2014 ◽  
Vol 1603 ◽  
Author(s):  
Kenji Kikuchi ◽  
Shigeyuki Imura ◽  
Kazunori Miyakawa ◽  
Misao Kubota ◽  
Eiji Ohta
Keyword(s):  
Thin Film ◽  
Visible Light ◽  
Dark Current ◽  
Carrier Density ◽  
High Speed ◽  
Depletion Region ◽  
Image Sensors ◽  
Frame Rate ◽  
Semiconductor Layer ◽  
High Quantum Efficiency

ABSTRACTThere is an increased need for highly sensitive imaging devices to develop high resolution and high speed image sensors. Incident light intensity per pixel of image sensors is getting lower because the pixel resolution and frame rate of image sensors are becoming higher. We investigated the feasibility of using a photoconductor with tin-doped gallium oxide (Ga2O3:Sn)/Cu(In,Ga)Se2 (CIGS) hetero-junction for visible light image sensors. CIGS chalcopyrite thin films have great potential for improving the sensitivity of image sensors and CIGS chalcopyrite semiconductors have both a high absorption coefficient and high quantum efficiency. Moreover, the band gap can be adjusted for visible light. We applied Ga2O3 as an n-type semiconductor layer and a hole-blocking layer to CIGS thin film to reduce the dark current. The experimental results revealed that dark current was drastically reduced due to the application of Ga2O3 thin film, and an avalanche multiplication phenomenon was observed at an applied voltage of over 6 V. However, non-doped Ga2O3/CIGS hetero-junction only had sensitivity in the ultraviolet light region because their depletion region was almost completely spread throughout the Ga2O3 layer due to the low carrier density of the Ga2O3 layer. Therefore, we used Ga2O3:Sn for the n-type layer to increase carrier density. As a result, the depletion region shifted to the CIGS film and the cells had sensitivity in all visible regions. These results indicate that Ga2O3:Sn/CIGS hetero-junction are feasible for visible light photoconductors.

Wavelength-selective visible-light detector based on integrated graphene transistor and surface plasmon coupler

2014 ◽  
Author(s):  
Christian W. Smith ◽  
Doug Maukonen ◽  
R. E. Peale ◽  
C. J. Fredricksen ◽  
M. Ishigami ◽  
...  
Keyword(s):  
Visible Light ◽  
Surface Plasmon ◽  
Light Detector

An inverted planar solar cell with 13% efficiency and a sensitive visible light detector based on orientation regulated 2D perovskites

2018 ◽  
Vol 6 (47) ◽  
pp. 24633-24640 ◽  
Author(s):  
Xiaomei Lian ◽  
Jiehuan Chen ◽  
Ruilin Fu ◽  
Tsz-Ki Lau ◽  
Yingzhu Zhang ◽  
...  
Keyword(s):  
Solar Cell ◽  
Visible Light ◽  
Annealing Process ◽  
High Quality ◽  
Light Detector

A merged annealing process based high quality 2D perovskite film and the corresponding PVSC with a PCE beyond 13%.

Measurement of low frequency plasma fluctuations with a visible light detector in GAMMA 10

2004 ◽  
Vol 75 (10) ◽  
pp. 4085-4087 ◽  
Author(s):  
H. Higaki ◽  
M. Ichimura ◽  
K. Horinouchi ◽  
K. Nakagome ◽  
S. Kakimoto ◽  
...  
Keyword(s):  
Visible Light ◽  
Low Frequency ◽  
Plasma Fluctuations ◽  
Light Detector ◽  
Frequency Plasma
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