Wideband CMOS Compatible Capacitive MEMS Switch for RF Applications

2008 ◽  
Vol 18 (9) ◽  
pp. 599-601 ◽  
Author(s):  
Shumin Zhang ◽  
Wansheng Su ◽  
Mona Zaghloul ◽  
Brian Thibeault
Keyword(s):  
Mems Switch ◽  
Cmos Compatible ◽  
Rf Applications ◽  
Capacitive Mems

scholarly journals Dynamic Study of a Capacitive MEMS Switch with Double Clamped-Clamped Microbeams

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Hatem Samaali ◽  
Fehmi Najar ◽  
Slim Choura
Keyword(s):  
Transmission Line ◽  
Electrostatic Force ◽  
Equations Of Motion ◽  
Actuation Voltage ◽  
Transient Behavior ◽  
Mems Switch ◽  
Grid Points ◽  
Capacitive Mems ◽  
Better Than ◽  
Rf Performances

We study a capacitive MEMS switch composed of two clamped-clamped exible microbeams. We first develop a mathematical model for the MEMS switch where the upper microbeam represents the ground transmission line and the lower one represents the central transmission line. An electrostatic force is applied between the two microbeams to yield the switch to its ON and OFF states. We derive the equations of motion of the system and associated boundary conditions and solve the static and dynamic problems using the differential quadratic method. We show that using only nine grid points gives relatively accurate results when compared to those obtained using FEM. We also examine the transient behavior of the microswitch and obtain results indicating that subsequent reduction in actuation voltage, switching time, and power consumption are expected along with relatively good RF performances. ANSYS HFSS simulator is used in this paper to extract the RF characteristics of the microswitch. HFSS simulation results show that the insertion loss is as low as −0.31 dB and that the return loss is better than −12.41 dB at 10 GHz in the ON state. At the OFF state, the isolation is lower than −23 dB in the range of 10 to 50 GHz.

Design of MEMS switch for RF applications

2011 ◽  
Vol 17 (1) ◽  
pp. 161-163 ◽  
Author(s):  
N. J. R. Muniraj ◽  
K. Sathesh
Keyword(s):  
Mems Switch ◽  
Rf Applications

3D Heterogeneous Integration using MEMS Devices for RF Applications

2012 ◽  
Vol 1427 ◽  
Author(s):  
Fumihiko Nakazawa ◽  
Xiaoyu Mi ◽  
Takeaki Shimanouchi ◽  
Tadashi Nakatani ◽  
Takashi Katsuki ◽  
...  
Keyword(s):  
Rf Mems ◽  
Acoustic Resonator ◽  
Tunable Filter ◽  
Wafer Surface ◽  
Heterogeneous Integration ◽  
Mems Devices ◽  
Mems Switches ◽  
Mems Switch ◽  
Film Bulk ◽  
Rf Applications

ABSTRACTThis paper presents novel 3D heterogeneous integrations using MEMS Devices for RF applications. We propose a 3D heterogeneous integration method that combines the advantages of LTCC, passive integration, and MEMS technologies. The basic concept is to form a large-size LTCC wiring wafer and then to form high-Q passives or MEMS filters directly on the wafer surface. Other functional devices such as ICs, SAWs, and MEMS switches are mounted above the surface-formed devices. A miniaturized duplexer consisted of IPD, SAW, and film bulk acoustic resonator (FBAR); and a next generation duplexer module consisted of an MEMS tunable filter and a piezoelectric transducer (PZT)-actuated RF MEMS switch were constructed to demonstrate its feasibility and effectiveness.

scholarly journals Analysis of Pull-in-Voltage and Figure-of-Merit of Capacitive MEMS Switch

2016 ◽  
Vol 17 (3) ◽  
pp. 129-133 ◽  
Author(s):  
Rajesh Saha ◽  
Santanu Maity ◽  
Ngasepam Monica Devi ◽  
Chandan Tilak Bhunia
Keyword(s):  
Figure Of Merit ◽  
Mems Switch ◽  
Capacitive Mems
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