Slightly-Doped Step-Like Electron-Blocking Layer in InGaN Light-Emitting Diodes

Yen-Kuang Kuo; Tsun-Hsin Wang; Jih-Yuan Chang; Jen-De Chen

doi:10.1109/lpt.2012.2207381

Slightly-Doped Step-Like Electron-Blocking Layer in InGaN Light-Emitting Diodes

IEEE Photonics Technology Letters ◽

10.1109/lpt.2012.2207381 ◽

2012 ◽

Vol 24 (17) ◽

pp. 1506-1508 ◽

Cited By ~ 5

Author(s):

Yen-Kuang Kuo ◽

Tsun-Hsin Wang ◽

Jih-Yuan Chang ◽

Jen-De Chen

Keyword(s):

Light Emitting Diodes ◽

Blocking Layer ◽

Electron Blocking Layer ◽

Light Emitting

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Designing anti-trapezoidal electron blocking layer for the amelioration of AlGaN-based deep ultraviolet light-emitting diodes internal quantum efficiency

Optik ◽

10.1016/j.ijleo.2021.166528 ◽

2021 ◽

Vol 232 ◽

pp. 166528

Author(s):

Muhammad Usman ◽

Tariq Jamil ◽

Shahzeb Malik ◽

Habibullah Jamal

Keyword(s):

Ultraviolet Light ◽

Quantum Efficiency ◽

Light Emitting Diodes ◽

Internal Quantum Efficiency ◽

Blocking Layer ◽

Electron Blocking Layer ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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Reduction of efficiency droop by inserting superlattice quaternary-ternary electron blocking layer in GaN-based light-emitting diodes

Materials Science and Engineering B ◽

10.1016/j.mseb.2021.115279 ◽

2021 ◽

Vol 271 ◽

pp. 115279

Author(s):

Abdur-Rehman Anwar ◽

Muhammad Usman ◽

Munaza Munsif ◽

Kiran Saba

Keyword(s):

Light Emitting Diodes ◽

Efficiency Droop ◽

Blocking Layer ◽

Electron Blocking Layer ◽

Light Emitting

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Electron Confinement and Hole Injection Improvement in InGaN/GaN Light-Emitting Diodes With Graded-Composition Last Quantum Barrier and Without Electron Blocking Layer

Journal of Display Technology ◽

10.1109/jdt.2015.2437454 ◽

2015 ◽

Vol 11 (9) ◽

pp. 753-758 ◽

Cited By ~ 4

Author(s):

Liwen Cheng ◽

Shudong Wu ◽

Haitao Chen ◽

Daoren Gong ◽

Yuefeng Wei

Keyword(s):

Light Emitting Diodes ◽

Hole Injection ◽

Blocking Layer ◽

Electron Blocking Layer ◽

Light Emitting ◽

Electron Confinement

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Advantages of AlGaN-based deep ultraviolet light-emitting diodes with a superlattice electron blocking layer

Superlattices and Microstructures ◽

10.1016/j.spmi.2015.05.010 ◽

2015 ◽

Vol 85 ◽

pp. 59-66 ◽

Cited By ~ 13

Author(s):

Pai Sun ◽

Xianglong Bao ◽

Songqing Liu ◽

Chunya Ye ◽

Zhaorong Yuan ◽

...

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Blocking Layer ◽

Electron Blocking Layer ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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Efficient white organic light-emitting diodes based on a balanced split of the exciton-recombination zone using a graded mixed layer as an electron-blocking layer

Journal of the Society for Information Display ◽

10.1889/jsid18.1.97 ◽

2010 ◽

Vol 18 (1) ◽

pp. 97

Author(s):

C. K. Kim ◽

I -H. Noh ◽

T -S. Lee ◽

B -W. Lee ◽

C. Hong ◽

...

Keyword(s):

Mixed Layer ◽

Light Emitting Diodes ◽

Organic Light Emitting Diodes ◽

Blocking Layer ◽

Electron Blocking Layer ◽

Light Emitting ◽

Organic Light ◽

Exciton Recombination ◽

Recombination Zone

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Effect of p-AlxGa1−xN electron blocking layer on optical and electrical properties in GaN-based light emitting diodes

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4757289 ◽

2012 ◽

Vol 30 (6) ◽

pp. 061204 ◽

Cited By ~ 2

Author(s):

Ki-Hyun Kim ◽

Sang-Won Lee ◽

Sung-Nam Lee ◽

Jihoon Kim

Keyword(s):

Electrical Properties ◽

Light Emitting Diodes ◽

Blocking Layer ◽

Optical And Electrical Properties ◽

Electron Blocking Layer ◽

Light Emitting

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Efficiency improvement of light-emitting diodes with a developed electron blocking layer structure and its optimization

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2012.09.024 ◽

2013 ◽

Vol 47 ◽

pp. 51-58 ◽

Cited By ~ 8

Author(s):

Tian-Hu Wang ◽

Jin-Liang Xu ◽

Xiao-Dong Wang

Keyword(s):

Light Emitting Diodes ◽

Layer Structure ◽

Blocking Layer ◽

Efficiency Improvement ◽

Electron Blocking Layer ◽

Light Emitting

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Simulation and fabrication of N-polar GaN-based blue-green light-emitting diodes with p-type AlGaN electron blocking layer

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-018-8962-y ◽

2018 ◽

Vol 29 (11) ◽

pp. 9321-9325 ◽

Cited By ~ 2

Author(s):

Gaoqiang Deng ◽

Yuantao Zhang ◽

Ye Yu ◽

Long Yan ◽

Pengchong Li ◽

...

Keyword(s):

Light Emitting Diodes ◽

Green Light ◽

Blocking Layer ◽

Electron Blocking Layer ◽

Light Emitting ◽

P Type

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P-113: Improving the Carrier Balance with Hybrid Hole Transporting Layer and Electron Blocking Layer in Quantum Dot Light-Emitting Diodes

SID Symposium Digest of Technical Papers ◽

10.1002/sdtp.12296 ◽

2018 ◽

Vol 49 (1) ◽

pp. 1636-1639 ◽

Cited By ~ 1

Author(s):

Dan Dong ◽

Lu Lian ◽

Dongxu Feng ◽

Han Wang ◽

Gufeng He

Keyword(s):

Quantum Dot ◽

Light Emitting Diodes ◽

Blocking Layer ◽

Electron Blocking Layer ◽

Light Emitting ◽

Hole Transporting

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Engineering last quantum barrier/electron blocking layer interface to improve green light-emitting diodes

Optical and Quantum Electronics ◽

10.1007/s11082-021-03300-4 ◽

2021 ◽

Vol 53 (11) ◽

Author(s):

Munaza Munsif ◽

Muhammad Usman ◽

Abdur-Rehman Anwar ◽

Sibghatullah Khan ◽

Saad Rasheed ◽

...

Keyword(s):

Light Emitting Diodes ◽

Green Light ◽

Blocking Layer ◽

Electron Blocking Layer ◽

Light Emitting ◽

Layer Interface

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