Investigation of the hermeticity of BCB-sealed cavities for housing (RF-)MEMS devices

Author(s):  
A. Jourdain ◽  
P. De Moor ◽  
S. Pamidighantam ◽  
H.A.C. Tilmans
Keyword(s):  
Rf Mems ◽  
Author(s):  
Hadi Mirzajani ◽  
Habib Badri Ghavifekr ◽  
Esmaeil Najafi Aghdam

In recent years, Microelectromechanical Systems (MEMS) technology has seen a rapid rate of evolution because of its great potential for advancing new products in a broad range of applications. The RF and microwave devices and components fabricated by this technology offer unsurpassed performance such as near-zero power consumption, high linearity, and cost effectiveness by batch fabrication in respect to their conventional counterparts. This chapter aims to give an in-depth overview of the most recently published methods of designing MEMS-based smart antennas. Before embarking into the different techniques of beam steering, the concept of smart antennas is introduced. Then, some fundamental concepts of MEMS technology such as micromachining technologies (bulk and surface micromachining) are briefly discussed. After that, a number of RF MEMS devices such as switches and phase shifters that have applications in beam steering antennas are introduced and their operating principals are completely explained. Finally, various configurations of MEMS-enabled beam steering antennas are discussed in detail.


Author(s):  
Anis Nurashikin Nordin

Today’s high-tech consumer market demand complex, portable personal wireless consumer devices that are low-cost and have small sizes. Creative methods of combining mature integrated circuit (IC) fabrication techniques with innovative radio-frequency micro-electro-mechanical systems (RF-MEMS) devices has given birth to wireless transceiver components, which operate at higher frequencies but are manufactured at the low-cost of standard ICs. Oscillators, RF bandpass filters, and low noise amplifiers are the most critical and important modules of any wireless transceiver. Their individual characteristics determine the overall performance of a transceiver. This chapter illustrates RF-oscillators that utilize MEMS devices such as resonators, varactors, and inductors for frequency generation. Emphasis will be given on state of the art RF-MEMS components such as film bulk acoustic wave, surface acoustic wave, flexural mode resonators, lateral and vertical varactors, and solenoid and planar inductors. The advantages and disadvantages of each device structure are described, with reference to the most recent work published in the field.


Author(s):  
Djemel Lellouchi ◽  
Jean-Luc Gauffier ◽  
Xavier Lafontan ◽  
Patrick Pons ◽  
Petra Schmitt ◽  
...  

In this paper, we present a new tool developed for environmental testing of MEMS: the EMA (Environmental MEMS Analyzer) 3D. Based on white light profilometry coupled with an environmental chamber, it permits large temperature scale and different pressure testing. This system has been used to characterize the environmental behavior of two types of RF MEMS, from −20 to 200°C.


2005 ◽  
Author(s):  
John M. Wilson ◽  
Rizwan Bashirullah ◽  
David P. Nackashi ◽  
David A. Winick ◽  
Paul D. Franzon
Keyword(s):  
Rf Mems ◽  
Low Loss ◽  

Author(s):  
Lin Sun ◽  
Hojin Kim ◽  
Alejandro Strachan ◽  
Sanjay R. Mathur ◽  
Jayathi Y. Murthy

RF-MEMS devices area complex systems governed by the interaction of a variety of forces, including electrostatics, solid deformation, fluid damping and contact. The performance and reliability of these devices is strongly dependent on device geometry and composition, and also on material microstructure and related properties. In this paper, we consider multiscale simulation of RF MEMS switched. At the device level, we introduce a comprehensive integrated numerical framework to simulate the major governing physics and their interactions. At the micron scale, we develop a mesoscale contact model to describe the history-dependent force-displacement relationships in terms of the surface roughness, the long-range attractive interaction between the two surfaces, and the repulsive interaction between contacting asperities (including elastic and plastic deformation). The inputs to this model are obtained from atomic level simulations and nanoscale surface topography characterization. The mesoscale contact model is integrated in the device-level simulation to predict the pull-in and pull-out behavior of these switches. The uncertainties associated with the simulation are quantified and propagated using a non-intrusive collocation method based on generalized Polynomial Chaos (gPC) expansions. With such a framework, we are able to predict the PDFs of pull-in and pull-out voltage, identify the critical factors that have the most influence on the quantities of interest, and therefore guide resource allocation and risk-informed decision-making.


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