Ultra-low voltage integrated receivers in nanoscale CMOS

2011 ◽  
Author(s):  
Ajay Balankutty ◽  
Peter R. Kinget
Keyword(s):  
Low Voltage ◽  
Nanoscale Cmos ◽  
Integrated Receivers

scholarly journals Low-Voltage Topologies for 40-Gb/s Circuits in Nanoscale CMOS

2007 ◽  
Vol 42 (7) ◽  
pp. 1564-1573 ◽  
Author(s):  
Theodoros Chalvatzis ◽  
Kenneth H. K. Yau ◽  
Ricardo A. Aroca ◽  
Peter Schvan ◽  
Ming-Ta Yang ◽  
...  
Keyword(s):  
Low Voltage ◽  
Nanoscale Cmos

FD-SOI MOSFETs for the low-voltage nanoscale CMOS era

2009 ◽  
Author(s):  
K. Itoh ◽  
N. Sugii ◽  
D. Hisamoto ◽  
R. Tsuchiya
Keyword(s):  
Low Voltage ◽  
Nanoscale Cmos

scholarly journals Advancement in Nanoscale CMOS Device Design En Route to Ultra-Low-Power Applications

VLSI Design ◽  
2011 ◽  
Vol 2011 ◽  
pp. 1-19 ◽  
Author(s):  
Subhra Dhar ◽  
Manisha Pattanaik ◽  
Poolla Rajaram
Keyword(s):  
Low Power ◽  
High Performance ◽  
Low Voltage ◽  
Deep Submicron ◽  
Device Design ◽  
Short Channel ◽  
Ultra Low Power ◽  
Technology Scaling ◽  
Nanoscale Cmos ◽  
Voltage Application

In recent years, the demand for power sensitive designs has grown significantly due to the fast growth of battery-operated portable applications. As the technology scaling continues unabated, subthreshold device design has gained a lot of attention due to the low-power and ultra-low-power consumption in various applications. Design of low-power high-performance submicron and deep submicron CMOS devices and circuits is a big challenge. Short-channel effect is a major challenge for scaling the gate length down and below 0.1 μm. Detailed review and potential solutions for prolonging CMOS as the leading information technology proposed by various researchers in the past two decades are presented in this paper. This paper attempts to categorize the challenges and solutions for low-power and low-voltage application and thus provides a roadmap for device designers working in the submicron and deep submicron region of CMOS devices separately.

Processing of human melanoma cells for correlative TEM, LVSEM, and LM

1991 ◽  
Vol 49 ◽  
pp. 106-107
Author(s):  
Marek Malecki ◽  
J. Victor Small ◽  
James Pawley
Keyword(s):  
Electron Microscopy ◽  
Low Voltage ◽  
Fluorescent Microscopy ◽  
Blood Stream ◽  
Surface Topology ◽  
Integrin Receptors ◽  
Transmission Electron ◽  
Develop Technology ◽  
Voltage Scanning ◽  
Mechanisms Of Adhesion

The relative roles of adhesion and locomotion in malignancy have yet to be clearly established. In a tumor, subpopulations of cells may be recognized according to their capacity to invade neighbouring tissue,or to enter the blood stream and metastasize. The mechanisms of adhesion and locomotion are themselves tightly linked to the cytoskeletal apparatus and cell surface topology, including expression of integrin receptors. In our studies on melanomas with Fluorescent Microscopy (FM) and Cell Sorter(FACS), we noticed that cells in cultures derived from metastases had more numerous actin bundles, then cells from primary foci. Following this track, we attempted to develop technology allowing to compare ultrastructure of these cells using correlative Transmission Electron Microscopy(TEM) and Low Voltage Scanning Electron Microscopy(LVSEM).

High-pressure freezing of cells in suspension for low-voltage scanning electron microscopy (LVSEM)

1991 ◽  
Vol 49 ◽  
pp. 64-65
Author(s):  
Marek Malecki ◽  
James Pawley ◽  
Hans Ris
Keyword(s):  
Electron Microscopy ◽  
High Pressure ◽  
Low Voltage ◽  
Culture Media ◽  
Cell Structure ◽  
Freeze Substitution ◽  
Ice Crystal ◽  
High Pressure Freezing ◽  
Cell Culture Media ◽  
Voltage Scanning

The ultrastructure of cells suspended in physiological fluids or cell culture media can only be studied if the living processes are stopped while the cells remain in suspension. Attachment of living cells to carrier surfaces to facilitate further processing for electron microscopy produces a rapid reorganization of cell structure eradicating most traces of the structures present when the cells were in suspension. The structure of cells in suspension can be immobilized by either chemical fixation or, much faster, by rapid freezing (cryo-immobilization). The fixation speed is particularly important in studies of cell surface reorganization over time. High pressure freezing provides conditions where specimens up to 500μm thick can be frozen in milliseconds without ice crystal damage. This volume is sufficient for cells to remain in suspension until frozen. However, special procedures are needed to assure that the unattached cells are not lost during subsequent processing for LVSEM or HVEM using freeze-substitution or freeze drying. We recently developed such a procedure.

Development of a conical anode Fe-gun for low voltage SEM

1988 ◽  
Vol 46 ◽  
pp. 978-979
Author(s):  
T. Miyokawa ◽  
S. Norioka ◽  
S. Goto
Keyword(s):  
High Resolution ◽  
Field Emission ◽  
Low Voltage ◽  
Irradiation Damage ◽  
Cold Cathode ◽  
Virtual Source ◽  
Source Position ◽  
Electrostatic Lens ◽  
Electrostatic Lenses ◽  
Wide Range

Field emission SEMs (FE-SEMs) are becoming popular due to their high resolution needs. In the field of semiconductor product, it is demanded to use the low accelerating voltage FE-SEM to avoid the electron irradiation damage and the electron charging up on samples. However the accelerating voltage of usual SEM with FE-gun is limited until 1 kV, which is not enough small for the present demands, because the virtual source goes far from the tip in lower accelerating voltages. This virtual source position depends on the shape of the electrostatic lens. So, we investigated several types of electrostatic lenses to be applicable to the lower accelerating voltage. In the result, it is found a field emission gun with a conical anode is effectively applied for a wide range of low accelerating voltages.A field emission gun usually consists of a field emission tip (cold cathode) and the Butler type electrostatic lens.

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