An edge-defined nano-lithography technique suitable for low thermal budget process and 3-D stackable devices

2004 ◽  
Author(s):  
J. Nasrullah ◽  
J.B. Burr ◽  
G.L. Tyler
Keyword(s):  
Budget Process ◽  
Thermal Budget ◽  
Low Thermal Budget ◽  
Lithography Technique

scholarly journals Operation of thin-film thermoelectric generator of Ge-rich poly-Ge1-x Sn x on SiO2 fabricated by a low thermal budget process

2019 ◽  
Vol 12 (5) ◽  
pp. 051016
Author(s):  
Kouta Takahashi ◽  
Hiroshi Ikenoue ◽  
Mitsuo Sakashita ◽  
Osamu Nakatsuka ◽  
Shigeaki Zaima ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermoelectric Generator ◽  
Budget Process ◽  
Thermal Budget ◽  
Low Thermal Budget

Catalytic Oxidation of Silicon Nitride thin films Using Potassium*

1988 ◽  
Vol 131 ◽  
Author(s):  
J. W. Rogers ◽  
D. S. Blair ◽  
C. H. F. Peden
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Thermal Oxidation ◽  
Catalytic Oxidation ◽  
Budget Process ◽  
Thermal Budget ◽  
Silicon Nitride Films ◽  
Time Requirements ◽  
Low Thermal Budget ◽  
Temperature Time

ABSTRACTThin silicon nitride films on a Si(100) substrate have been oxidized using potassium in a low thermal budget process. The presence of potassium on the SisN4 surface greatly lowers the temperature-time requirements for oxidation as compared with direct thermal oxidation.

Influence of a silicon cap on SiGe passivation by anodic oxidation

1996 ◽  
Vol 451 ◽  
Author(s):  
J. Rappich ◽  
I. Sieber ◽  
A. Schöpke ◽  
W. Füssel ◽  
M. Glück ◽  
...  
Keyword(s):  
Electrochemical Oxidation ◽  
Anodic Oxidation ◽  
Electrochemical Corrosion ◽  
Sige Layer ◽  
Budget Process ◽  
Thermal Budget ◽  
Pile Up ◽  
High Temperature Processing ◽  
Low Thermal Budget

ABSTRACTWe applied electrochemical oxidation as a low thermal budget process for the passivation of thin SiGe epilayers on Si substrate and compared the results with those obtained on thermally oxidized layers. The use of a thin silicon cap on the SiGe layer reduces the electrochemical corrosion with dissolution of Ge during oxidation and leads to a higher amount of GeO2 in the oxidized SiGe layer than anodic oxidation without a Si cap. The protected SiGe layer shows a slight Ge enrichment at the interface which is different from the behavior of the non-protected SiGe layer. The highest Ge pile-up is achieved by the thermally oxidized samples where the oxide layer is formed by nearly pure SiO2. Using photoluminescence spectroscopy we showed that the passivation and quality of the interface is best if no Ge enrichment occurs. The results suggest that electrochemical oxidation of SiGe layers is preferable to high temperature processing.

Formation of High Quality Oxynitride Gate Dielectrics by High Pressure Thermal Oxidation of Si in NO

1999 ◽  
Vol 567 ◽  
Author(s):  
S. C. Song ◽  
C. H. Lee ◽  
H. F. Luan ◽  
D. L. Kwong ◽  
M. Gardner ◽  
...  
Keyword(s):  
High Pressure ◽  
Gate Dielectrics ◽  
Nitrogen Concentration ◽  
Budget Process ◽  
High Nitrogen ◽  
High Quality ◽  
Thermal Budget ◽  
Hot Carrier ◽  
Low Thermal Budget ◽  
High Nitrogen Concentration

ABSTRACTIn this paper, we report a novel low thermal budget process (<800°C) for engineered ultra thin oxynitride dielectrics with high nitrogen concentration (>5% a.c.) using vertical high pressure (VHP) process. VHP grown oxynitride films show >1 OX lower leakage current, higher drive current and superior hot-carrier reliability compared to control SiO2 of identical thickness (Tox,eq) grown by RTP in O2.

Thermal Budget Reduction for Back-end Compatibility and Control of Resistance Switching Mechanism (Unipolar to Bipolar) in Pr1-xCaxMnO3 (PCMO) RRAM

2013 ◽  
Vol 1507 ◽  
Author(s):  
Neeraj Panwar ◽  
Gurudatt Rao ◽  
N. Ravi Chandra Raju ◽  
Rajashree Nori ◽  
Pankaj Kumbhare ◽  
...  
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Memory Performance ◽  
Deposition Process ◽  
Budget Process ◽  
Thermal Budget ◽  
Bipolar Switching ◽  
Budget Reduction ◽  
Low Thermal Budget ◽  
And Control

ABSTRACTA low thermal budget process for back-end compatible PCMO based RRAM cell is essential for 3D stacked memory. In this paper, we investigate two strategies to engineer low thermal budget processing for bipolar switching - (i) deposition engineering i.e. based on deposition temperature and oxygen partial pressure, (ii) post deposition anneal i.e. based on inert anneal of room temperature deposited PCMO film.. We demonstrate that both deposition and anneal shows a transition temperature above which bipolar switching is realized. Oxygen partial pressure is a key deposition process parameter. As oxygen partial pressure is reduced memory window increases, however beyond an optimal O2 partial pressure, unipolar switching is observed. Inert anneal is more effective in thermal budget reduction as N2/550°C/2min anneal has same memory performance as 650°C/2hour deposition process.

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