Impact of effective capture cross section on generation-recombination rate in InAs/GaAs quantum dot solar cell

2021 ◽  
Author(s):  
Ahna Sharan ◽  
Jitendra Kumar
Keyword(s):  
Solar Cell ◽  
Quantum Dot ◽  
Cross Section ◽  
Recombination Rate ◽  
Capture Cross Section ◽  
Capture Cross ◽  
Gaas Quantum Dot

On Modeling Trivalent Dangling Bonds with Bivalent Levels

1994 ◽  
Vol 336 ◽  
Author(s):  
Vyshnavi Suntharalingam ◽  
Howard M. Branz
Keyword(s):  
Charge Density ◽  
Cross Section ◽  
Recombination Rate ◽  
Thermal Equilibrium ◽  
Capture Cross Section ◽  
Hydrogenated Amorphous Silicon ◽  
Capture Cross ◽  
Dangling Bond ◽  
Band Bending ◽  
Hydrogenated Amorphous

ABSTRACTWe examine the treatment of the hydrogenated Amorphous silicon (a-Si:H) dangling-bond defect used in the Analysis of microelectronic and Photonic Structures (AMPS) computer model and in other models of a-Si:H semiconductor devices. The dangling bond defect (D) is trivalent, with two correlated electronic levels in the gap. However, Modelers typically employ two uncorrelated bivalent levels to represent D; this introduces fictitious neutral dangling bond (D°) levels whenever D is charged. We find that the bivalent (AMPS) representation captures the important aspects of D physics and introduces only small errors into simulations. To reach this conclusion, we examine charge density and recombination and compare the trivalent D defect and its bivalent representation in both thermal equilibrium and non-equilibrium (illuminated) cases. The charge density is identical, implying that band bending computed by the simulation is accurate. We find errors in the recombination rate for the bivalent representation are normally less than or equal to σ0/σch, where σ° is the capture cross section of D0 and σch is the capture cross section of a charged state of D. Typically Modelers use σ0/σch of 1:10 to 1:100 yielding insignificant errors in the recombination rate with the uncorrelated bivalent representation.

Measurements of the neutron capture cross section of 243Am around 23.5 keV

2021 ◽  
pp. 1-6
Author(s):  
Yu Kodama ◽  
Tatsuya Katabuchi ◽  
Gerard Rovira ◽  
Atsushi Kimura ◽  
Shoji Nakamura ◽  
...  
Keyword(s):  
Cross Section ◽  
Neutron Capture ◽  
Capture Cross Section ◽  
Capture Cross ◽  
Neutron Capture Cross Section

scholarly journals Demonstration of a GaSb/GaAs Quantum Dot Intermediate Band Solar Cell Operating at Maximum Power Point

2020 ◽  
Vol 125 (24) ◽  
Author(s):  
I. Ramiro ◽  
J. Villa ◽  
J. Hwang ◽  
A. J. Martin ◽  
J. Millunchick ◽  
...  
Keyword(s):  
Solar Cell ◽  
Quantum Dot ◽  
Maximum Power ◽  
Maximum Power Point ◽  
Intermediate Band ◽  
Intermediate Band Solar Cell ◽  
Gaas Quantum Dot ◽  
Power Point

THERMAL NEUTRON CAPTURE CROSS-SECTION OF Na23 AND Mn55

1953 ◽  
Vol 31 (3) ◽  
pp. 204-206 ◽  
Author(s):  
Rosalie M. Bartholomew ◽  
R. C. Hawkings ◽  
W. F. Merritt ◽  
L. Yaffe
Keyword(s):  
Thermal Neutron ◽  
Cross Section ◽  
Cross Sections ◽  
Neutron Capture ◽  
Half Life ◽  
Capture Cross Section ◽  
Thermal Neutron Capture ◽  
Capture Cross ◽  
Neutron Capture Cross Section ◽  
Capture Cross Sections

The thermal neutron capture cross sections of Na23 and Mn55 have been determined using the activation method. The values are 0.53 ± 0.03 and 12.7 ± 0.3 barns respectively with respect to σAul97 = 93 barns. These agree well with recent pile oscillator results. The half-life for Mn56 is found to be 2.576 ± 0.002 hr.

scholarly journals The 236U neutron capture cross-section measured at the n_TOF CERN facility

2017 ◽  
Vol 146 ◽  
pp. 11054
Author(s):  
M. Mastromarco ◽  
M. Barbagallo ◽  
M.J. Vermeulen ◽  
N. Colonna ◽  
S. Altstadt ◽  
...  
Keyword(s):  
Cross Section ◽  
Neutron Capture ◽  
Capture Cross Section ◽  
Capture Cross ◽  
Neutron Capture Cross Section
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