High absorption-coefficient and stable a-Si for high-efficiency solar cells

Author(s):  
S. Nakano ◽  
S. Okamoto ◽  
T. Takahama ◽  
M. Nishikuni ◽  
K. Ninomiya ◽  
...  
2013 ◽  
Vol 3 (2) ◽  
Author(s):  
Mohammad Bhuiyan ◽  
Abdus Bhuiyan ◽  
Ahmad Hossain ◽  
Zahid Mahmood

AbstractCuInSe2 is considered as a striking semiconductor for second generation solar cells. An investigation of optical properties of CuInSe2 thin films is essential to evaluate its perfectibility as high efficiency solar cells. The films were fabricated by thermal co-evaporation technique. For this experiment, a shimadzu spectrophotometer of model number 1201 is used. The optical properties of these films are determined for the wavelength range 350 nm–1100 nm. From the experiment it is evident that the reflectance and transmittance of the films are negligible in comparison to the absorption of these films. The high absorption coefficient of the order of 104/cm of the film material also supports this. The band gap of the CuInSe2 films was evaluated to be 1.1 eV. From XRD and EDAX analysis it is evident that CuInSe2 films are polycrystalline in nature having ideal stoichiometric composition.


2012 ◽  
Vol 520 (15) ◽  
pp. 5042-5045 ◽  
Author(s):  
Ping-Kuan Chang ◽  
Po-Tsung Hsieh ◽  
Fu-Ji Tsai ◽  
Chun-Hsiung Lu ◽  
Chih-Hung Yeh ◽  
...  

2020 ◽  
Author(s):  
Jin Wu

InGaN can reach all values of bandgap from 3.42 to 0.7eV, which covers almost the entire solar spectrum. This study is to understand the influence of each parameter of the solar cell for an improved optimization of performance. The yield obtained for a reference cell is 12.2 % for optimal values of doping of the layers. For generation and recombination, performance of the cell varies with these settings. III nitrides have a high absorption coefficient, a very thin layers of material are sufficient to absorb most of the light.


2016 ◽  
Vol 120 (28) ◽  
pp. 15027-15034 ◽  
Author(s):  
Yue Hu ◽  
Antonio Abate ◽  
Yiming Cao ◽  
Aruna Ivaturi ◽  
Shaik Mohammed Zakeeruddin ◽  
...  

MRS Bulletin ◽  
2007 ◽  
Vol 32 (3) ◽  
pp. 230-235 ◽  
Author(s):  
Frank Dimroth ◽  
Sarah Kurtz

AbstractThe efficiency of a solar cell can be increased by stacking multiple solar cells with a range of bandgap energies, resulting in a multijunction solar cell with a maximum the oretical efficiency limit of 86.8% III–V compound semiconductors are good candidates for fabricating such multijunction solar cells for two reasons: they can be grown with excellent material quality; and their bandgaps span a wide spectral range, mostly with direct bandgaps, implying a high absorption coefficient. These factors are the reason for the success of this technology, which has achieved 39% efficiency, the highest solar-to-electric conversion efficiency of any photovoltaic device to date. This article explores the materials science of today's high-efficiency multijunction cells and describes challenges associated with new materials developments and how they may lead to next-generation, multijunction solar cell concepts.


Author(s):  
Jun-Mo Park ◽  
Tack Ho Lee ◽  
Dong Won Kim ◽  
Jae Won Kim ◽  
Hae Yeon Chung ◽  
...  

Conjugated polymers with a high absorption coefficient and high charge mobility are essential for high power conversion efficiency (PCE) and large area roll-to-roll processing of polymer solar cells. However, only...


Author(s):  
Kai Li ◽  
Dong-Hui Xu ◽  
Xin Wang ◽  
Xiangyang Liu

Nonfullerene organic solar cells have received much attention in recent years due to their low cost, high absorption coefficient and excellent synthetic flexibility. However, the microscopic photoinduced dynamics at corresponding...


2018 ◽  
Vol 27 (5) ◽  
pp. 058802 ◽  
Author(s):  
Hui-Xin Qi ◽  
Bo-Han Yu ◽  
Sai Liu ◽  
Miao Zhang ◽  
Xiao-Ling Ma ◽  
...  

2021 ◽  
Author(s):  
jin wu

InGaN can reach all values of bandgap from 3.42 to 0.7eV, which covers almost the entire solar spectrum. This study is to understand the influence of each parameter of the solar cell for an improved optimization of performance. The yield obtained for a reference cell is 12.2 % for optimal values of doping of the layers. For generation and recombination, performance of the cell varies with these settings. III nitrides have a high absorption coefficient, a very thin layers of material are sufficient to absorb most of the light.


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