High Performance GaAs Solar Cells Grown at High Growth Rates by Atmospheric-Pressure Dynamic Hydride Vapor Phase Epitaxy

2019 ◽  
Author(s):  
Wondwosen Metaferia ◽  
Kevin L. Schulte ◽  
John Simon ◽  
Steve Johnston ◽  
Aaron J. Ptak
Keyword(s):  
Solar Cells ◽  
Vapor Phase ◽  
Growth Rates ◽  
Atmospheric Pressure ◽  
High Performance ◽  
High Growth ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Hydride vapor phase epitaxy of GaN boules using high growth rates

2010 ◽  
Vol 312 (18) ◽  
pp. 2537-2541 ◽  
Author(s):  
E. Richter ◽  
U. Zeimer ◽  
S. Hagedorn ◽  
M. Wagner ◽  
F. Brunner ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Growth Rates ◽  
High Growth ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Heteroepitaxy of GaAs on (001) ⇒ 6° Ge substrates at high growth rates by hydride vapor phase epitaxy

2013 ◽  
Vol 113 (17) ◽  
pp. 174903 ◽  
Author(s):  
K. L. Schulte ◽  
A. W. Wood ◽  
R. C. Reedy ◽  
A. J. Ptak ◽  
N. T. Meyer ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Growth Rates ◽  
High Growth ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Pd-mediated mechanical stack of III–V solar cells fabricated via hydride vapor phase epitaxy

Solar Energy ◽  
2021 ◽  
Vol 224 ◽  
pp. 142-148
Author(s):  
Yasushi Shoji ◽  
Ryuji Ohisma ◽  
Kikuo Makita ◽  
Akinori Ubukata ◽  
Takeyoshi Sugaya
Keyword(s):  
Solar Cells ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Fabrication of GaAs solar cells grown with InGaP layers by hydride vapor-phase epitaxy

2018 ◽  
Vol 57 (8S3) ◽  
pp. 08RD06 ◽  
Author(s):  
Ryuji Oshima ◽  
Kikuo Makita ◽  
Akinori Ubukata ◽  
Takeyoshi Sugaya
Keyword(s):  
Solar Cells ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

scholarly journals Publisher Correction: Gallium arsenide solar cells grown at rates exceeding 300 µm h−1 by hydride vapor phase epitaxy

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Wondwosen Metaferia ◽  
Kevin L. Schulte ◽  
John Simon ◽  
Steve Johnston ◽  
Aaron J. Ptak
Keyword(s):  
Gallium Arsenide ◽  
Solar Cells ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Epitaxial Lateral Overgrowth of GaN with Chloride-Based Growth Chemistries in Both Hydride and Metalorganic Vapor Phase Epitaxy

1998 ◽  
Vol 537 ◽  
Author(s):  
R. Zhang ◽  
L. Zhang ◽  
D.M. Hansen ◽  
Marek P. Boleslawski ◽  
K.L. Chen ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Growth Temperature ◽  
High Growth ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Epitaxial Lateral Overgrowth ◽  
Growth Environment ◽  
Gallium Chloride ◽  
Lateral Overgrowth ◽  
Lateral Growth Rate

AbstractEpitaxial lateral overgrowth (ELO) of GaN on SiO2-masked (0001) GaN substrates has been investigated by using chloride-based growth chemistries via hydride vapor phase epitaxy (HVPE) and metal organic vapor phase epitaxy (MOVPE). Diethyl gallium chloride, (C2H5)2GaCl, was used in as the MOVPE Ga precursor. The lateral and vertical growth rates as well as the overgrowth morphology of ELO GaN structures are dependent on growth temperature, V/III ratio and the in-plane orientation of the mask opening. A high growth temperature and low V/III ratio increase the lateral growth rate and produce ELO structures with a planar surface to the GaN prisms. High-quality coalesced and planar ELO GaN has been fabricated by both growth chemistries. The use of the diethyl gallium chloride source allows for the benefits of HVPE growth to be realized within the MOVPE growth environment.

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