A 2.4GHz ambient RF energy harvesting system with −20dBm minimum input power and NiMH battery storage

Author(s):  
Kenneth Gudan ◽  
Sergey Chemishkian ◽  
Jonathan J. Hull ◽  
Stewart J. Thomas ◽  
Joshua Ensworth ◽  
...  
2021 ◽  
Vol 20 ◽  
pp. 244-248
Author(s):  
Chinmoy Bharali ◽  
Manash Pratim Sarma

A high frequency rectifier is the core of a RF energy harvesting system. It should offer a very good efficiency at low input power levels and to obtain that compensation of threshold voltage is a very important aspect. A threshold compensation scheme for MOSFETS for RF rectifier applicable in RF energy harvesting system is presented in this paper. The switching of the MOSFET is improved with overall enhancement of output rise time of the system. The design emphasis is to have a simplified circuit without the requirement of any external source so as to achieve self-sustainability in the true sense. The rectifier circuit is derived from the basic Dickson charge pump model and is evaluated using 45nm CMOS process. The design has utilized Metal Oxide Semiconductor Field Effect Transistor instead of basic diodes which ensures low power along with fabrication feasibility. The maximum measured PCE of the design is obtained to be 33% at 4dBm input power level at 500Mhz frequency with 1 Kilo Ohm load resistance. The output transient response rise time has been measured to be 85ns at 500MHz and 50.10ns at 1Ghz.


Author(s):  
Ahmed Al-Khayari ◽  
Hamed Al-Khayari ◽  
Sulaiman Al-Nabhani ◽  
Mohammed M. Bait-Suwailam ◽  
Zia Nadir

2012 ◽  
Vol 132 ◽  
pp. 49-69 ◽  
Author(s):  
Norashidah Md. Din ◽  
Chandan Kumar Chakrabarty ◽  
Aima Bin Ismail ◽  
Kavuri Kasi Annapurna Devi ◽  
Wan-Yu Chen

Electronics ◽  
2019 ◽  
Vol 8 (10) ◽  
pp. 1173
Author(s):  
Thuy-Linh Nguyen ◽  
Yasuo Sato ◽  
Koichiro Ishibashi

This paper proposes a structure of the μ W RF energy harvesting (RFEH) system that is used for scavenging RF power from an ambient environment. A cross-coupled rectifier (CCR) with floating sub-circuit structures was utilized in the application of dynamic threshold MOSFET (DTMOS) on Silicon on Thin Buried Oxide (SOTB) to obtain high drain conductance of the MOSFET. A wide bandwidth matching between antenna and rectifier was designed to receive energy from the orthogonal frequency division multiplexing (OFDM) RF signal with a bandwidth of 15 MHz at 950 MHz band. Realistic measurements with a 950 MHz LTE mobile phone signal from the ambient environment indicate that an average DC output power of 2.77 μ W is harvested with the proposed RFEH system at a level of −19.4 dBm input power. The proposed RFEH system exhibits the best performance when compared to that of other realistic RFEH systems and is a potential candidate for battery-less Internet of Things (IoT) applications.


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