Temperature dependence of apparent threshold voltage of silicon MOS transistors at cryogenic temperatures

1968 ◽  
Vol 15 (6) ◽  
pp. 412-412 ◽  
Author(s):  
H.C. Nathanson ◽  
C. Jund ◽  
J. Grosvalet
Energies ◽  
2021 ◽  
Vol 14 (14) ◽  
pp. 4092
Author(s):  
Grzegorz Blakiewicz ◽  
Jacek Jakusz ◽  
Waldemar Jendernalik

This paper examines the suitability of selected configurations of ultra-low voltage (ULV) oscillators as starters for a voltage boost converter to harvest energy from a thermoelectric generator (TEG). Important properties of particularly promising configurations, suitable for on-chip implementation are compared. On this basis, an improved oscillator with a low startup voltage and a high output voltage swing is proposed. The applicability of n-channel native MOS transistors with negative or near-zero threshold voltage in ULV oscillators is analyzed. The results demonstrate that a near-zero threshold voltage transistor operating in the weak inversion region is most advantageous for the considered application. The obtained results were used as a reference for design of a boost converter starter intended for integration in 180-nm CMOS X-FAB technology. In the selected technology, the most suitable transistor available with a negative threshold voltage was used. Despite using a transistor with a negative threshold voltage, a low startup voltage of 29 mV, a power consumption of 70 µW, and power conversion efficiency of about 1.5% were achieved. A great advantage of the proposed starter is that it eliminates a multistage charge pump necessary to obtain a voltage of sufficient value to supply the boost converter control circuit.


Author(s):  
M. A. Mamun ◽  
M. R. Hernandez-Flores ◽  
E. Morales ◽  
C. Hernandez-Garcia ◽  
M. Poelker

1971 ◽  
Vol 18 (6) ◽  
pp. 386-388 ◽  
Author(s):  
R. Wang ◽  
J. Dunkley ◽  
T.A. DeMassa ◽  
L.F. Jelsma

1974 ◽  
Vol 21 (12) ◽  
pp. 778-784 ◽  
Author(s):  
M.D. Pocha ◽  
A.G. Gonzalez ◽  
R.W. Dutton

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