An Analytical Model for the Forming Process of Conductive-Bridge Resistive-Switching Random-Access Memory

2014 ◽  
Vol 61 (9) ◽  
pp. 3166-3171 ◽  
Author(s):  
Shaoli Lv ◽  
He Wang ◽  
Jinyu Zhang ◽  
Jun Liu ◽  
Lingling Sun ◽  
...  
Keyword(s):  
Analytical Model ◽  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Forming Process ◽  
Conductive Bridge

Complementary resistive switching behavior for conductive bridge random access memory

2016 ◽  
Vol 9 (6) ◽  
pp. 064201 ◽  
Author(s):  
Hao-Xuan Zheng ◽  
Ting-Chang Chang ◽  
Kuan-Chang Chang ◽  
Tsung-Ming Tsai ◽  
Chih-Cheng Shih ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Resistive Switching Behavior ◽  
Conductive Bridge

Atomistic study of dynamics for metallic filament growth in conductive-bridge random access memory

2015 ◽  
Vol 17 (14) ◽  
pp. 8627-8632 ◽  
Author(s):  
Shengjun Qin ◽  
Zhan Liu ◽  
Guo Zhang ◽  
Jinyu Zhang ◽  
Yaping Sun ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Resistive Switching ◽  
Kinetic Monte Carlo ◽  
Random Access ◽  
Growth Dynamics ◽  
Random Access Memory ◽  
Access Memory ◽  
Metallic Filament ◽  
Conductive Bridge ◽  
Atomistic Study

The growth dynamics for metallic filaments in conductive-bridge resistive-switching random access memory (CBRAM) are studied using the kinetic Monte Carlo (KMC) method.

Non-volatile resistive switching in CuBi-based conductive bridge random access memory device

2018 ◽  
Vol 112 (25) ◽  
pp. 253503 ◽  
Author(s):  
Sujaya Kumar Vishwanath ◽  
Hyunsuk Woo ◽  
Sanghun Jeon
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Device ◽  
Access Memory ◽  
Conductive Bridge
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