Design of Highly Stable Tungsten-Doped IZO Thin-Film Transistors With Enhanced Performance

Da Wan; Xingqiang Liu; Ablat Abliz; Chuansheng Liu; Yanbing Yang; Wei Wu; Guoli Li; Jinchai Li; Huipeng Chen; Tailiang Guo; Lei Liao

doi:10.1109/ted.2018.2797300

Design of Highly Stable Tungsten-Doped IZO Thin-Film Transistors With Enhanced Performance

IEEE Transactions on Electron Devices ◽

10.1109/ted.2018.2797300 ◽

2018 ◽

Vol 65 (3) ◽

pp. 1018-1022 ◽

Cited By ~ 9

Author(s):

Da Wan ◽

Xingqiang Liu ◽

Ablat Abliz ◽

Chuansheng Liu ◽

Yanbing Yang ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Izo Thin Film

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Effects of Ozone Annealing on Solution-Processed Indium Zinc Oxide (IZO) Thin Film Transistors

Electrochemical and Solid-State Letters ◽

10.1149/2.004111esl ◽

2011 ◽

Vol 14 (11) ◽

pp. H442 ◽

Cited By ~ 4

Author(s):

Seung-Yeol Han ◽

Chih-hung Chang

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Thin Film Transistors ◽

Solution Processed ◽

Indium Zinc Oxide ◽

Izo Thin Film

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Correction to “Quantitative Extraction of Temperature-Dependent Barrier Height and Channel Resistance of a-SIZO/OMO and a-SIZO/IZO Thin-Film Transistors” [Feb 13 247-249]

IEEE Electron Device Letters ◽

10.1109/led.2013.2285072 ◽

2013 ◽

Vol 34 (11) ◽

pp. 1442-1442

Author(s):

K. Heo ◽

B. H. Hong ◽

E. H. Lee ◽

S. Y. Lee ◽

S. Kim ◽

...

Keyword(s):

Thin Film ◽

Barrier Height ◽

Thin Film Transistors ◽

Temperature Dependent ◽

Channel Resistance ◽

Quantitative Extraction ◽

Izo Thin Film

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Fabrication Low-voltage Amorphous Indium Zinc Oxide(a-IZO) Thin Film Transistors using High Dielectric HfO2 as Gate Insulator at Room Tempature

10.7567/ssdm.2009.p-6-2 ◽

2009 ◽

Author(s):

W. K. Lin ◽

C. S. Li ◽

K. C. Liu ◽

S. T. Chang

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Thin Film Transistors ◽

Low Voltage ◽

Gate Insulator ◽

Indium Zinc Oxide ◽

High Dielectric ◽

Izo Thin Film

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Role of O2/Ar mixing ratio on the performances of IZO thin film transistors fabricated using a two-step deposition process

Thin Solid Films ◽

10.1016/j.tsf.2011.09.003 ◽

2011 ◽

Vol 520 (5) ◽

pp. 1475-1478 ◽

Cited By ~ 12

Author(s):

Won Kim ◽

Sang-Hyuk Lee ◽

Jung-Hwan Bang ◽

Hyun-Seok Uhm ◽

Jin-Seok Park

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Deposition Process ◽

Mixing Ratio ◽

Izo Thin Film

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Kinetic Stress Testing and the Influence of Long-Time Anneals on the Behavior of IZO Thin Film Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2013.2249067 ◽

2013 ◽

Vol 60 (5) ◽

pp. 1656-1662 ◽

Cited By ~ 1

Author(s):

Rajitha N. P. Vemuri ◽

Michael A. Marrs ◽

Terry L. Alford

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Stress Testing ◽

Long Time ◽

Izo Thin Film

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Improved Negative Bias Stress Stability of IZO Thin Film Transistors via Post-Vacuum Annealing of Solution Method

ECS Journal of Solid State Science and Technology ◽

10.1149/2.007307jss ◽

2013 ◽

Vol 2 (7) ◽

pp. Q99-Q103 ◽

Cited By ~ 4

Author(s):

Bo-Yuan Su ◽

Sheng-Yuan Chu ◽

Yung-Der Juang ◽

Han Lee

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Solution Method ◽

Vacuum Annealing ◽

Negative Bias ◽

Bias Stress ◽

Izo Thin Film

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Electrically Stable, Solution-Processed Amorphous Oxide IZO Thin-Film Transistors Through a UV-Ozone Assisted Sol-Gel Approach

IEEE Transactions on Electron Devices ◽

10.1109/ted.2014.2303796 ◽

2014 ◽

Vol 61 (4) ◽

pp. 1093-1100 ◽

Cited By ~ 10

Author(s):

Thokchom Birendra Singh ◽

Jacek Jaroslaw Jasieniak ◽

Leonardo de Oliveira Tozi ◽

Christopher David Easton ◽

Mark Bown

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Sol Gel ◽

Stable Solution ◽

Solution Processed ◽

Amorphous Oxide ◽

Izo Thin Film ◽

Uv Ozone

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Flexible a-IZO thin film transistors fabricated by solution processes

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2010.06.166 ◽

2010 ◽

Vol 507 (1) ◽

pp. L1-L3 ◽

Cited By ~ 57

Author(s):

Hua-Chi Cheng ◽

Chien-Yie Tsay

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Solution Processes ◽

Izo Thin Film

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Influence of Atmospheric Conditions on Electrical Characteristics of Solution-Processed IZO Thin-Film Transistors

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2017.13378 ◽

2017 ◽

Vol 17 (6) ◽

pp. 4123-4126 ◽

Cited By ~ 1

Author(s):

Sungkeun Baang ◽

Hyeonju Lee ◽

Youngjin Ham ◽

Jaehoon Park

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Electrical Characteristics ◽

Atmospheric Conditions ◽

Solution Processed ◽

Izo Thin Film

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Electrical and mechanical characteristics of fully transparent IZO thin-film transistors on stress-relieving bendable substrates

Applied Physics Letters ◽

10.1063/1.4964133 ◽

2016 ◽

Vol 109 (14) ◽

pp. 143504 ◽

Cited By ~ 9

Author(s):

Sukhyung Park ◽

Kyoungah Cho ◽

Hyungon Oh ◽

Sangsig Kim

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Mechanical Characteristics ◽

Stress Relieving ◽

Izo Thin Film

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