Low Thermal Budget (<250 °C) Dual-Gate Amorphous Indium Tungsten Oxide (IWO) Thin-Film Transistor for Monolithic 3-D Integration

2020 ◽  
Vol 67 (12) ◽  
pp. 5336-5342
Author(s):  
Wriddhi Chakraborty ◽  
Huacheng Ye ◽  
Benjamin Grisafe ◽  
Ian Lightcap ◽  
Suman Datta
Keyword(s):  
Thin Film ◽  
Tungsten Oxide ◽  
Thin Film Transistor ◽  
Thermal Budget ◽  
Dual Gate ◽  
Low Thermal Budget

Effects of Microwave Annealing on Nitrogenated Amorphous In-Ga-Zn-O Thin-Film Transistor for Low Thermal Budget Process Application

2013 ◽  
Vol 34 (9) ◽  
pp. 1157-1159 ◽  
Author(s):  
Chur-Shyang Fuh ◽  
Po-Tsun Liu ◽  
Li-Feng Teng ◽  
Sih-Wei Huang ◽  
Yao-Jen Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Budget Process ◽  
Thermal Budget ◽  
Microwave Annealing ◽  
Low Thermal Budget

Indium–gallium–zinc–oxide thin-film transistor with a planar split dual-gate structure

2017 ◽  
Vol 31 (35) ◽  
pp. 1750332
Author(s):  
Yu-Rong Liu ◽  
Jie Liu ◽  
Jia-Qi Song ◽  
Pui-To Lai ◽  
Ruo-He Yao
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Practical Applications ◽  
Gate Structure ◽  
Dual Gate ◽  
Indium Gallium ◽  
Output Characteristics

An amorphous indium–gallium–zinc–oxide (a-IGZO) thin-film transistor (TFT) with a planar split dual gate (PSDG) structure has been proposed, fabricated and characterized. Experimental results indicate that the two independent gates can provide dynamical control of device characteristics such as threshold voltage, sub-threshold swing, off-state current and saturation current. The transconductance extracted from the output characteristics of the device increases from [Formula: see text] to [Formula: see text] for a change of control gate voltage from −2 V to 2 V, and thus the device could be used in a variable-gain amplifier. A significant advantage of the PSDG structure is its flexibility in controlling the device performance according to the need of practical applications.

scholarly journals Effect of top gate potential on bias-stress for dual gate amorphous indium-gallium-zinc-oxide thin film transistor

AIP Advances ◽  
2016 ◽  
Vol 6 (7) ◽  
pp. 075217 ◽  
Author(s):  
Minkyu Chun ◽  
Jae Gwang Um ◽  
Min Sang Park ◽  
Md Delwar Hossain Chowdhury ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Bias Stress ◽  
Dual Gate ◽  
Gate Potential ◽  
Indium Gallium

scholarly journals Operation of thin-film thermoelectric generator of Ge-rich poly-Ge1-x Sn x on SiO2 fabricated by a low thermal budget process

2019 ◽  
Vol 12 (5) ◽  
pp. 051016
Author(s):  
Kouta Takahashi ◽  
Hiroshi Ikenoue ◽  
Mitsuo Sakashita ◽  
Osamu Nakatsuka ◽  
Shigeaki Zaima ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermoelectric Generator ◽  
Budget Process ◽  
Thermal Budget ◽  
Low Thermal Budget
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