Lifetime Studies of 130 nm nMOS Transistors Intended for Long-Duration, Cryogenic High-Energy Physics Experiments
2012 ◽
Vol 59
(4)
◽
pp. 1757-1766
◽
Keyword(s):
Keyword(s):
2015 ◽
Vol 62
(3)
◽
pp. 1255-1261
◽
Keyword(s):
2015 ◽
Vol 3
(1)
◽
pp. 41-45
Keyword(s):
Keyword(s):
2005 ◽
Vol 20
(16)
◽
pp. 3874-3876
◽
2017 ◽
Vol 12
(12)
◽
pp. P12004-P12004
◽
Keyword(s):
2016 ◽
Vol 69
(6)
◽
pp. 1130-1134
◽
2002 ◽
Vol 478
(1-2)
◽
pp. 344-347
◽
Keyword(s):
Keyword(s):