Direct Non-Contact Electrical Measurement of Low-k Damage in Patterned Low-k Films by a Near-Field Scanned Microwave Probe

2006 ◽  
Author(s):  
J. Tsai ◽  
J. Hsu ◽  
J. Shieh ◽  
S. Jang ◽  
M. Liang
Keyword(s):  
Near Field ◽  
Electrical Measurement ◽  
Microwave Probe ◽  
Low K

Scanning Near-Field Microwave Probe for In-line Metrology of Low-K Dielectrics

2004 ◽  
Vol 812 ◽  
Author(s):  
Vladimir V. Talanov ◽  
Robert L. Moreland ◽  
André Scherz ◽  
Andrew R. Schwartz ◽  
Youfan Liu
Keyword(s):  
Near Field ◽  
Spot Size ◽  
Excellent Correlation ◽  
K Value ◽  
Microwave Probe ◽  
Near Field Scanning ◽  
Non Destructive ◽  
Low K ◽  
Probe Measurements ◽  
Better Than

AbstractWe have developed a novel microwave near-field scanning probe technique for non-contact measurement of the dielectric constant of low-k films. The technique is non-destructive, noninvasive and can be used on both porous and non-porous dielectrics without any sample preparation. The probe has a few-micron spot size, which makes the technique well suited for real time low-k metrology on production wafers. For dielectrics with k<4 the precision and accuracy are better than 2% and 5%, respectively. Results for both SOD and CVD low-k films are presented and show excellent correlation with Hg-probe measurements. Results for k-value mapping on blanket 200mm wafers are presented as well.

Near-field Scanning Microwave Probe for Rapid Detection of Nonvisual and Parametric Defects in Cu/low-k Interconnect on Production Wafers

2006 ◽  
Author(s):  
Vladimir V. Talanov ◽  
Andrew R. Schwartz
Keyword(s):  
Failure Analysis ◽  
Rapid Detection ◽  
Near Field ◽  
Electrical Measurements ◽  
Visual Defects ◽  
Microwave Probe ◽  
Near Field Scanning ◽  
Low K

Abstract We demonstrate the use of a near-field scanned microwave probe (NSMP) for failure analysis (FA) of parametric defects in Cu/low-k interconnect that leave no physical remnant (sometimes referred to as “non-visual defects”). This technique is rapid, quantitative, non-contact, and provides direct electrical measurements.

scholarly journals Noncontact dielectric constant metrology of low-k interconnect films using a near-field scanned microwave probe

2006 ◽  
Vol 88 (19) ◽  
pp. 192906 ◽  
Author(s):  
Vladimir V. Talanov ◽  
André Scherz ◽  
Robert L. Moreland ◽  
Andrew R. Schwartz
Keyword(s):  
Dielectric Constant ◽  
Near Field ◽  
Microwave Probe ◽  
Low K

Near field planar microwave probe sensor for nondestructive condition assessment of wood products

2018 ◽  
Vol 123 (22) ◽  
pp. 224502 ◽  
Author(s):  
Nilesh Kumar Tiwari ◽  
Surya Prakash Singh ◽  
M. Jaleel Akhtar
Keyword(s):  
Near Field ◽  
Condition Assessment ◽  
Wood Products ◽  
Microwave Probe ◽  
Probe Sensor

Near-field scanning microwave probe based on a dielectric resonator

2001 ◽  
Vol 72 (4) ◽  
pp. 2073-2079 ◽  
Author(s):  
M. Abu-Teir ◽  
M. Golosovsky ◽  
D. Davidov ◽  
A. Frenkel ◽  
H. Goldberger
Keyword(s):  
Dielectric Resonator ◽  
Near Field ◽  
Microwave Probe ◽  
Near Field Scanning

Evanescent microwave probe measurement of low-k dielectric films

2002 ◽  
Vol 92 (2) ◽  
pp. 808-811 ◽  
Author(s):  
Zhengyu Wang ◽  
Michael A. Kelly ◽  
Zhi-Xun Shen ◽  
Gang Wang ◽  
Xiao-Dong Xiang ◽  
...  
Keyword(s):  
Probe Measurement ◽  
Dielectric Films ◽  
Microwave Probe ◽  
Low K

scholarly journals Near-Field Ultrasonic Imaging: A Novel Method for Nondestructive Mechanical Imaging of IC Interconnect Structures

2002 ◽  
Vol 716 ◽  
Author(s):  
G. S. Shekhawat ◽  
H. Xie ◽  
Y. Zheng ◽  
R. E. Geer
Keyword(s):  
Relative Phase ◽  
Near Field ◽  
Scanning Probe ◽  
Phase Imaging ◽  
Force Microscopy ◽  
Probe Microscope ◽  
Novel Method ◽  
Phase Sensitive ◽  
Low K ◽  
Mechanical Imaging

AbstractThe investigation of an alternate approach to nondestructive, nanoscale mechanical imaging for IC interconnect structures is reported. This approach utilizes a heterodyne interferometer based on a scanning probe microscope, also referred to as heterodyne force microscopy (HFM). This interferometer is sensitive to the relative phase difference of the two ultrasonic excitations due to spatial variations in the sample viscoelastic response and enables near-field, phase-sensitive imaging. Proof-of-feasibility demonstrations of this technique are presented for ultrasonic phase-imaging of Al/low-k interconnect structures. Spatial resolution <10 nm is demonstrated.

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