Formation and optimization of deposition surface shape during fused silica glass synthesis by chemical vapor deposition

2019 ◽  
Vol 11 (2) ◽  
pp. 307-319
Author(s):  
Yaosong Huang
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silica Glass ◽  
Chemical Vapor ◽  
Fused Silica ◽  
Surface Shape ◽  
Deposition Surface ◽  
Fused Silica Glass

Carbon nanotubes grown on different-sized rectangular patterns

2004 ◽  
Vol 19 (6) ◽  
pp. 1803-1807 ◽  
Author(s):  
Lujun Pan ◽  
Yoshikazu Nakayama ◽  
Hideki Shiozaki ◽  
Chikashi Inazumi
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Line Width ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Surface Shape ◽  
Iron Film ◽  
Nucleation Process ◽  
Catalyst Film ◽  
Field Emission Displays

Carbon nanotubes have been synthesized by chemical vapor deposition using a thin iron film as catalyst on the silicon substrate with different-sized rectangular patterns. It is found that the carbon nanotubes grow vertically to the substrate in a high density with a surface shape similar to that of the substrate when the line width of the patterns are larger than 1 μm, However, when the line width of the pattern is reduced to below 0.5 μm, carbon nanotubes cannot grow vertically anymore. This phenomenon might be caused by the relaxation of stress in catalyst film and the coalescence of the catalyst clusters to form particles or grains, which contributes to the migration of catalyst from edge to inner part during the nucleation process. These results are very useful for the fabrication of field-emission displays and other devices using patterned carbon nanotubes.

Spray Chemical Vapor Deposition of CuInS2 Thin Films for Application in Solar Cell Devices

1997 ◽  
Vol 495 ◽  
Author(s):  
Jennifer A. Hollingsworth ◽  
William E. Buhro ◽  
Aloysius F. Hepp ◽  
Philip P. Jenkins ◽  
Mark A. Stan
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Fused Silica ◽  
Direct Band Gap ◽  
Cuins2 Thin Films ◽  
Potential Applications ◽  
Direct Band

ABSTRACTChalcopyrite CuInS2 is a direct band gap semiconductor (1.5 eV) that has potential applications in photovoltaic thin film and photoelectrochemical devices. We have successfully employed spray chemical vapor deposition using the previously known, single-source, metalorganic precursor, (Ph3P)2CuIn(SEt)4, to deposit CuInS2 thin films. Stoichiometric, polycrystalline films were deposited onto fused silica over a range of temperatures (300–400 °C). Morphology was observed to vary with temperature: spheroidal features were obtained at lower temperatures and angular features at 400 °C. At even higher temperatures (500 °C), a Cu-deficient phase, CuIn5S8, was obtained as a single phase. The CuInS2 films were determined to have a direct band gap of ca. 1.4 eV.

Doping of silica glass with fluorine by the modified chemical vapor deposition method

2013 ◽  
Vol 39 (3) ◽  
pp. 285-286
Author(s):  
A. G. Andreev ◽  
V. S. Bureev ◽  
M. A. Eronyan ◽  
I. I. Kryukov ◽  
T. V. Mazunina ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silica Glass ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method

Chemical Vapor Deposition of Silicon Carbide Using a Novel Organometallic Precursor

1988 ◽  
Vol 131 ◽  
Author(s):  
Wei Lee ◽  
Leonard V. Interrante ◽  
Corrina Czekaj ◽  
John Hudson ◽  
Klaus Lenz ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Fused Silica ◽  
Crystal Silicon ◽  
Organometallic Precursor ◽  
Pressure Chemical ◽  
By Products

ABSTRACTDense silicon carbide films have been prepared by low pressure chemical vapor deposition (LPCVD) using a volatile, heterocyclic, carbosilane precursor, MeHSiCH2SiCH2Me(CH2SiMeH2). At deposition temperatures between 700 and 800° C, polycrystalline, stoichiometric SiC films have been deposited on single crystal silicon and fused silica substrates. Optical microscopy and SEM analyses indicated formation of a transparent yellow film with a uniform, featureless surface and good adherence to the Si(lll) substrate. The results of preliminary studies of the nature of the gaseous by-products of the CVD processes and ultrahigh vacuum physisorption and decomposition of the precursor on Si(100) substrates are discussed.

Study of Three-Dimensional Optical Homogeneity of Fused Silica Prepared by Chemical Vapor Deposition

2017 ◽  
Vol 726 ◽  
pp. 465-469
Author(s):  
Zhu Feng Shao ◽  
Zai Kui Xiang ◽  
Yu Fen Wang ◽  
Mei Sui ◽  
Yi Wang Bao
Keyword(s):  
Chemical Vapor Deposition ◽  
Wave Front ◽  
Optical System ◽  
Vapor Deposition ◽  
Three Dimensional ◽  
Vertical Direction ◽  
Chemical Vapor ◽  
Fused Silica ◽  
Optical Homogeneity

Optical homogeneity of the fused silica directly affects the wave-front quality of the optical system. Furthermore, three-dimensional optical homogeneity is required in order to produce high-precision prisms, because of its special optical demand. However, the three-dimensional optical homogeneity of fused silica is poor owing to the periodically grow laws based on vertical CVD technical in the process of ingots production. One circular and one square sample were prepared to measuring the three-dimensional optical homogeneity, founding that the vertical direction had worse optical homogeneity result compared to the horizontal direction. The constituents of the sample were tested and analyzed to found the inhomogeneity reason. The method was proposed to improve the three-dimensional optical homogeneity.

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