High-Frequency Ultrasonic Characterization of Sintered Silicon Carbide

1989 ◽  
Vol 72 (3) ◽  
pp. 383-387 ◽  
Author(s):  
George Y. Baaklini ◽  
Edward R. Generazio ◽  
James D. Kiser
1993 ◽  
pp. 483-488
Author(s):  
M. Toubal ◽  
E. Radziszewski ◽  
M. Asmani ◽  
M. Ourak ◽  
F. Lefebvre

2007 ◽  
Vol 122 (3) ◽  
pp. 1827-1832 ◽  
Author(s):  
Chih-Chung Huang ◽  
Lei Sun ◽  
Seth H. Dailey ◽  
Shyh-Hau Wang ◽  
K. Kirk Shung

2002 ◽  
Vol 742 ◽  
Author(s):  
James V. Marzik ◽  
Toshi Oyama ◽  
Warren J. MoberlyChan ◽  
William J. Croft

ABSTRACTChemical vapor deposited (CVD) silicon carbide (SiC) ceramic material was joined to itself via an air stable, silver-based active brazing alloy (ABA). The microstructure and microchemistry of the interface was characterized using transmission electron microscopy (TEM), scanning electron microscopy (SEM), and electron probe microanalysis (EPMA). Results were compared to previous studies on the active alloy brazing of sintered silicon carbide using higher copper alloys.


Author(s):  
Michael J. Slavin ◽  
Jeffrey J. Gruber

This paper discusses ultrasonic nondestructive evaluation (NDE) methods that are useful for ceramic characterization. These methods are: ultrasonic velocity measurements, velocity and defect C-scans and attenuation measurements. The way in which the ultrasonic measurements are influenced by the ceramic’s structure and properties is examined. The ultrasonic techniques discussed in this paper are routinely used as part of an inspection/quality control procedure of ceramics for armor and heat engine applications. Sintered beta silicon carbide (β-SiC), sintered alpha silicon carbide (α-SiC) and hot pressed titanium diboride (TiB2) have been well characterized by these techniques. Elastic modulus values as determined from velocity measurements agree very well with values measured from flexural tests. Correlations between the velocity C-scans, elastic properties and densities have also been determined. The limitations and potential of each of the ultrasonic techniques are discussed.


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