Experimental Study of Damage Mechanism of Carbon Nanotube as Nanocomponent of Electronic Devices Under High Current Density

2014 ◽  
Vol 136 (4) ◽  
Author(s):  
Kazuhiko Sasagawa ◽  
Kazuhiro Fujisaki ◽  
Jun Unuma ◽  
Ryota Azuma

The damage mechanisms of carbon nanotubes are considered to be the oxidation by Joule heating and migration of carbon atoms by high-density electron flows. In this study, a high current density testing system was designed and applied to multiwalled carbon nanotubes (MWCNTs) collected at the gap between thin-film electrodes. Local evaporation of carbon atoms occurred on the cathode side of the MWCNTs under relatively low current density conditions, and the center area of the MWCNTs under high current density conditions. The damaged morphology could be explained by considering both Joule heating and electromigration behavior of MWCNTs.

Author(s):  
Kazuhiko Sasagawa ◽  
Kazuhiro Fujisaki ◽  
Jun Unuma ◽  
Ryota Azuma

Carbon nanotube (CNT) has a great tolerance to high current density which is a cause of electromigration (EM). Therefore, CNT is expected to use as the materials of nanoscale components of electronic devices. The damage mechanisms of CNT are regarded as the effects of oxidation by Joule heating and/or the EM by high-density electron flows. In this study, we investigated the damage mechanism of CNT structures used as nano-component of electronic devices. An EM acceleration testing system was designed using the CNT structures collected at the gap of thin-film electrodes. The EM tests were conducted under the several kinds of current density conditions and the surrounding environments. An indicator of lifetime was determined by voltage measurements during the acceleration tests and their fracture phenomena were evaluated by means of microscopic observations. As the results, the amounts of lifetime of CNT were longer in the lower oxygen concentrations than in the air condition. In the microscopic studies, it was confirmed that the local evaporation of carbon atoms due to oxidation appeared at the cathode side of the CNT structures under low current density, and the center area of CNT under high current density. Both types of damage morphologies induced by oxidation and EM were observed at the damaged CNT. The results showed the dominant damage mechanism alternated between oxidation and EM depending on current density under oxygen rich conditions.


2010 ◽  
Vol 19 (1-2) ◽  
pp. 100-104 ◽  
Author(s):  
A. L. Musatov ◽  
K. R. Izrael'yants ◽  
A. B. Ormont ◽  
E. G. Chirkova ◽  
E. F. Kukovitsky

2017 ◽  
Vol 46 (8) ◽  
pp. 5028-5038 ◽  
Author(s):  
Zhihao Zhang ◽  
Huijun Cao ◽  
Haifeng Yang ◽  
Yong Xiao ◽  
Mingyu Li ◽  
...  

Author(s):  
M. J. Bronikowski ◽  
H. M. Manohara ◽  
P. H. Siegel ◽  
B. D. Hunt

We have investigated the field emission behavior of lithographically patterned bundles of multiwalled carbon nanotubes arranged in a variety of array geometries. Such arrays of nanotube bundles are found to perform significantly better in field emission than arrays of isolated nanotubes or dense, continuous mats of nanotubes, with the field emission performance depending on the bundle diameter and inter-bundle spacing. Arrays of 2-μm diameter nanotube bundles spaced 5 μm apart (edge-to-edge spacing) produced the largest emission densities, routinely giving 1.5 to 1.8 A/cm2 at ∼ 4 V/μm electric field, and >6 A/cm2 at 20 V/μm.


2016 ◽  
Vol 24 (4) ◽  
pp. 273-277 ◽  
Author(s):  
Qilong Wang ◽  
Cairu Yu ◽  
Yusong Di ◽  
Zhuoya Zhu ◽  
Xiaobing Zhang ◽  
...  

Carbon ◽  
2010 ◽  
Vol 48 (7) ◽  
pp. 1889-1896 ◽  
Author(s):  
K.R. Izrael’yants ◽  
A.L. Musatov ◽  
A.B. Ormont ◽  
E.G. Chirkova ◽  
E.F. Kukovitsky

1996 ◽  
Vol 427 ◽  
Author(s):  
H. C. Louie Liu ◽  
S. P. Murarka

AbstractElectromigration (EM), the mass transport phenomenon under applied electrical field, is known to cause degradation in interconnections and thus to compromise the devices' reliability. High current density and high temperature conditions are usually adopted to evaluate the EM lifetime. Such high current density will raise the temperature at the test sites because of Joule heating. Thus the actual temperature on the test surface, not the ambient temperature, is an important parameter affecting the lifetime of the metallization. A simple model is proposed here to predict the temperature rise in such interconnections and the calculated values agree well with the experimentally measured rise in temperature. Only heat conduction and convection are considered and illustrative equivalent electrical analogy technique is used to solve the problem. This model, using a commercially available spreadsheet and its iteration functions, is shown to match closely with experimental results.


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