In-Plane Thermoelectric Properties of Horizontally Aligned InAs/GaAs Quantum Dot Superlattices

2006 ◽  
Author(s):  
A. Yadav ◽  
K. P. Pipe ◽  
W. Ye ◽  
R. S. Goldman
Keyword(s):  
Quantum Dot ◽  
Band Structure ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Quantum Size Effects ◽  
Relaxation Time Approximation ◽  
Quantum Size ◽  
Constant Relaxation Time ◽  
Gaas Quantum Dot ◽  
Parallel Conductor

The thermoelectric properties of aligned quantum dot chains are calculated taking in account the change in band structure due to quantum size effects. From the calculated band structure, the Seebeck coefficient and electrical conductivity are calculated in a constant relaxation time approximation (CRTA). The power factor is plotted as a function of the size and spacing of dots and an increase is shown in the power factor for decreasing dot size. The net power factor is calculated using a parallel conductor model. The results are compared to the case of randomly spaced dots which have a power factor calculated using an effective resistance model.

Optical Properties from a Single GaAs Quantum Dot Structure

2021 ◽  
Vol 21 (9) ◽  
pp. 4908-4910
Author(s):  
Heedae Kim
Keyword(s):  
Optical Properties ◽  
Quantum Dot ◽  
Power Factor ◽  
Energy Difference ◽  
Large Energy ◽  
Gaas Quantum Dot ◽  
Perpendicular Polarization

We observed exciton and biexciton states in a single GaAs quantum dot at 4 K using micro pho-toluminescence system and investigated power dependent photoluminescence measurements to identify both exciton and biexciton states. The biexciton and exciton states showed quadratic (a~2.2) and linear (a~0.95) increasing power factor, respectively. The large energy difference (~0.2 meV) from exciton states for the perpendicular polarization was observed.

Quantum Size Effects on Phonon Transport in Ge Quantum Dot/SiO2 System

2012 ◽  
Author(s):  
C. C. Wang ◽  
J. Y. Chiou ◽  
J. C. Hsu ◽  
M. T. Hung ◽  
H. T. Chang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Size Effects ◽  
Phonon Transport ◽  
Quantum Size Effects ◽  
Sio2 System ◽  
Quantum Size ◽  
Ge Quantum Dot

Lateral quantum size effects created by growth induced surface and interface corrugations on non-(100)-oriented substrates

1993 ◽  
Vol 344 (1673) ◽  
pp. 469-480
Keyword(s):  
Quantum Dot ◽  
Size Effects ◽  
Quantum Wire ◽  
Multilayer Structures ◽  
Quantum Size Effects ◽  
Wire Arrays ◽  
Surface And Interface ◽  
Periodic Arrays ◽  
Quantum Size ◽  
Asymmetric Quantum

The evolution of periodic arrays of macrosteps and facets on III—V semiconductor surfaces during molecular beam epitaxy is used to create lateral quantum size effects in GaAs quantum wire and quantum dot structures in an AlAs matrix. We show that well ordered alternating wide and narrow regions of GaAs and AlAs form symmetric and asymmetric quantum-dot arrays on (111) and (211) GaAs, respectively, and periodic quantum wire arrays on (311) GaAs. The accumulation of steps by step bunching on (210) GaAs allows us to fabricate mesoscopic step arrays in GaAs-AlAs multilayer structures with a lateral periodicity comparable to the exciton Bohr radius. The observed optical properties of these corrugated multilayer structures confirm the additional lateral size quantization.

Theoretical Modeling and Improved Thermoelectric Properties in (111) and (001) Oriented PbTe/Pb1-xEuxTe MQWs

1997 ◽  
Vol 490 ◽  
Author(s):  
T. Koga ◽  
S. B. Cronin ◽  
T. C. Harman ◽  
X. Sun ◽  
M. S. Dresselhaus
Keyword(s):  
Relaxation Time ◽  
Seebeck Coefficient ◽  
Quantum Wells ◽  
Thermoelectric Properties ◽  
Theoretical Modeling ◽  
Multiple Quantum ◽  
Energy Bands ◽  
Time Approximation ◽  
Relaxation Time Approximation ◽  
Constant Relaxation Time

ABSTRACTTheoretical modeling of ZT of (111) and (001) oriented PbTe/Pb1-xEuxTe multiple-quantum-wells (MQWs) is carried out assuming parabolic energy bands and the constant relaxation time approximation. The model calculation for the (111) oriented MQWs is compared with the recently obtained experimental results for the Seebeck coefficient and the Hall carrier concentration. The thermoelectric properties for (001) oriented PbTe MQWs are expected to have even better thermoelectric properties than the (111) oriented PbTe MQWs.

Evolutional carrier mobility and power factor of two-dimensional tin telluride due to quantum size effects

2020 ◽  
Vol 8 (12) ◽  
pp. 4181-4191 ◽  
Author(s):  
Yu Li ◽  
Teng Ding ◽  
David K. Sang ◽  
Mengnan Wu ◽  
Junqin Li ◽  
...  
Keyword(s):  
Power Factor ◽  
Size Effects ◽  
Carrier Mobility ◽  
Layered Materials ◽  
Quantum Size Effects ◽  
Two Dimensional ◽  
Quantum Size ◽  
Tin Telluride ◽  
Transport Behaviour ◽  
Dependent Transport

Layer-dependent transport behaviour and thermoelectric performance of 2D SnTe layered materials.

Quantum size effects and band structure in InSb

1976 ◽  
Vol 37 (5) ◽  
pp. 519-523 ◽  
Author(s):  
G. Burrafato ◽  
G. Giaquinta ◽  
N.A. Mancini ◽  
A. Pennisi ◽  
S.O. Troia ◽  
...  
Keyword(s):  
Band Structure ◽  
Size Effects ◽  
Quantum Size Effects ◽  
Quantum Size

Magnetophonon Resonance by Quantum Size Effects in n-Ge-based and n-GaAs-based Quantum-dot Superlattices

2010 ◽  
Vol 57 (4) ◽  
pp. 760-767 ◽  
Author(s):  
Sang Chil Lee ◽  
Dong Shik Kang ◽  
Sang Chil Lee ◽  
Suck Whan Kim
Keyword(s):  
Quantum Dot ◽  
Size Effects ◽  
Quantum Size Effects ◽  
Quantum Size ◽  
Magnetophonon Resonance

Quantum size effects and band structure in InSb

1976 ◽  
Vol 18 (1) ◽  
pp. v
Author(s):  
G. Burrafato ◽  
G. Giaquinta ◽  
N.A. Mancini ◽  
A. Pennisi ◽  
S.O. Troia ◽  
...  
Keyword(s):  
Band Structure ◽  
Size Effects ◽  
Quantum Size Effects ◽  
Quantum Size
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