Molecular beam epitaxial growth of ultralow absorption GaN high electron mobility transistor material on sapphire substrates for infrared transparent conductors
2013 ◽
Vol 31
(3)
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pp. 03C101
1999 ◽
Vol 17
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pp. 1131
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1998 ◽
Vol 16
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pp. 1408
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2010 ◽
Vol 28
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pp. C3H1-C3H4
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2000 ◽
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pp. 1472
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1995 ◽
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