scholarly journals Novel strategy for low-temperature, high-rate growth of dense, hard, and stress-free refractory ceramic thin films

2014 ◽  
Vol 32 (4) ◽  
pp. 041515 ◽  
Author(s):  
Grzegorz Greczynski ◽  
Jun Lu ◽  
Stephan Bolz ◽  
Werner Kölker ◽  
Christoph Schiffers ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
High Rate ◽  
Ceramic Thin Films ◽  
Refractory Ceramic ◽  
Novel Strategy

Proposal of general rule to prepare epitaxial ceramic thin films at low temperature from the point of crystal chemistry

2004 ◽  
Vol 30 (7) ◽  
pp. 1247-1251 ◽  
Author(s):  
Naoki Wakiya ◽  
Hirokazu Ishigaki ◽  
Kazuo Shinozaki ◽  
Nobuyasu Mizutani
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Crystal Chemistry ◽  
General Rule ◽  
Ceramic Thin Films

Development and utility of a new 3-D magnetron source for high rate deposition of highly conductive ITO thin films near room temperature

2018 ◽  
Vol 20 (7) ◽  
pp. 4818-4830 ◽  
Author(s):  
Long Wen ◽  
Bibhuti Bhusan Sahu ◽  
Jeon Geon Han
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
High Rate ◽  
High Quality ◽  
Low Temperature Deposition ◽  
Ito Thin Films ◽  
Temperature Deposition ◽  
Ito Films

This study reports the high rate and low-temperature deposition of high-quality ITO films using a new 3-D confined magnetron sputtering method.

scholarly journals Analysis of Post-Deposition Recrystallization Processing via Indium Bromide of Cu(In,Ga)Se2 Thin Films

Materials ◽  
2021 ◽  
Vol 14 (13) ◽  
pp. 3596
Author(s):  
Deewakar Poudel ◽  
Benjamin Belfore ◽  
Tasnuva Ashrafee ◽  
Shankar Karki ◽  
Grace Rajan ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Single Stage ◽  
High Rate ◽  
Chemical Analyses ◽  
Different Types ◽  
Stage Process ◽  
Post Deposition

Cu(In,Ga)Se2 (CIGS) thin films were deposited at low temperature (350 °C) and high rate (10 µm/h) by a single stage process. The effect of post-deposition treatments at 400 °C and 500 °C by indium bromide vapor were studied and compared to the effect of a simple annealing under selenium. Structural, electrical, and chemical analyses demonstrate that there is a drastic difference between the different types of annealing, with the ones under indium bromide leading to much larger grains and higher conductivity. These properties are associated with a modification of the elemental profiles, specifically for gallium and sodium.

Low Temperature and High Rate Deposition of Ferrite Thin Films by Reactive Sputtering Method Using Electron Cyclotron Eesonance

Shinku ◽  
2006 ◽  
Vol 49 (7) ◽  
pp. 424-429
Author(s):  
Terumitsu TANAKA ◽  
Kazunori OSHIRO ◽  
Hirotaka FUJIMORI ◽  
Hiroki KURISU ◽  
Yoshihiro SHIMOSATO ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Reactive Sputtering ◽  
Electron Cyclotron ◽  
High Rate ◽  
Ferrite Thin Films
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