In situ studies of low temperature atomic level processing of GaN surfaces for atomic layer epitaxial growth

2019 ◽  
Vol 37 (2) ◽  
pp. 020928 ◽  
Author(s):  
Samantha G. Rosenberg ◽  
Christa Wagenbach ◽  
Virginia R. Anderson ◽  
Scooter D. Johnson ◽  
Neeraj Nepal ◽  
...  
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Atomic Layer ◽  
Atomic Level ◽  
In Situ Studies

scholarly journals AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing

RSC Advances ◽  
2019 ◽  
Vol 9 (22) ◽  
pp. 12226-12231 ◽  
Author(s):  
Wei-Chung Kao ◽  
Wei-Hao Lee ◽  
Sheng-Han Yi ◽  
Tsung-Han Shen ◽  
Hsin-Chih Lin ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Epitaxial Growth ◽  
Atomic Layer ◽  
Layer By Layer ◽  
Schematic Diagram ◽  
Layer Deposition ◽  
Processing Cycle

The schematic diagram of the processing cycle including the atomic layer annealing (ALA) to achieve low-temperature epitaxial growth of AlN on SiC.

Low-Temperature Epitaxial Growth of IN-Situ HeavilY B-Doped Si1-xGex, Films Using Ultraclean LPCVD

1998 ◽  
Vol 533 ◽  
Author(s):  
A. Morrya ◽  
M. Sakuraba ◽  
T. Matsuura ◽  
J. Murota ◽  
I. Kawashima ◽  
...  
Keyword(s):  
Low Temperature ◽  
Partial Pressure ◽  
Epitaxial Growth ◽  
Lattice Constant ◽  
Deposition Rate ◽  
Epitaxial Films ◽  
Similar Degree ◽  
Gas Mixture ◽  
Heavy Doping

AbstractIn-situ heavy doping of B into Si1-xGex epitaxial films on the Si(100) substrate have been investigated at 550°C in a SiH4(6.0Pa)-GeH4(0.1−6.0Pa)-B2H6(1.25 ×10−5−3.75 × 10−2Pa)-H2(17–24Pa) gas mixture by using an ultraclean hot-wall low-pressure CVD system. The deposition rate increased with increasing GeH4 partial pressure, and it decreased with increasing B2H6 partial pressure only at the higher GeH4 partial pressure. As the B2H6 partial pressure increased, the Ge fraction scarcely changed although the lattice constant of the film decreased. These characteristics can be explained by the suppression of both the SiH4 and GeH4 adsorption/reactions in a similar degree due to B2H6 adsorption on the Si-Ge and/or Ge-Ge bond sites. The B concentration in the film increased proportionally up to 1022cm3 with increasing B2H6 partial pressure.

The Viability of GeH4‐Based In Situ Clean for Low Temperature Silicon Epitaxial Growth

1996 ◽  
Vol 143 (7) ◽  
pp. 2387-2391 ◽  
Author(s):  
C.‐L. Wang ◽  
S. Unnikrishnan ◽  
B.‐Y. Kim ◽  
D.‐L. Kwong ◽  
A. F. Tasch
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth

Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure

2014 ◽  
Vol 2 (36) ◽  
pp. 7570-7574 ◽  
Author(s):  
Yijun Zhang ◽  
Wei Ren ◽  
Zhuangde Jiang ◽  
Shuming Yang ◽  
Weixuan Jing ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Low Temperatures ◽  
Level Structure ◽  
Atomic Layer ◽  
Atomic Level ◽  
Atomic Resolution ◽  
Remote Plasma ◽  
Layer Deposition

Atomic-resolution image of a graphene sheet synthesized by remote plasma-enhanced atomic layer deposition at low temperatures.

scholarly journals Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation

2020 ◽  
Vol 53 (34) ◽  
pp. 345105
Author(s):  
A V Uvarov ◽  
A S Gudovskikh ◽  
V N Nevedomskiy ◽  
A I Baranov ◽  
D A Kudryashov ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Epitaxial Growth ◽  
Atomic Layer ◽  
Plasma Activation ◽  
Layer Deposition
Sign in / Sign up

Export Citation Format

Share Document