Study of ion mixing during Auger electron spectroscopy depth profiling of Ge–Si multilayer system

1994 ◽  
Vol 12 (4) ◽  
pp. 2368-2372 ◽  
Author(s):  
M. Menyhard ◽  
A. Barna ◽  
J. P. Biersack
Keyword(s):  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Depth Profiling ◽  
Multilayer System ◽  
Auger Electron Spectroscopy Depth

Gold/Niobium Thin Film Metallizations for GaAs Devices and Circuits

2001 ◽  
Vol 695 ◽  
Author(s):  
Robert Esser ◽  
Aris Christou
Keyword(s):  
Thin Film ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Depth Profiling ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gaas Devices ◽  
Auger Electron Spectroscopy Depth ◽  
Interdiffusion Coefficients

ABSTRACTA refractory metallization of Au/Nb is proposed for use in first level metallization of GaAs devices. The diffusion and reaction kinetics are explored using sheet resistance measurements, along with X-ray diffraction and Auger electron spectroscopy depth profiling. The interdiffusion coefficients are reported. Diodes are fabricated using Nb/Au metallization and characterized

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