Correlating domain purity with charge carrier mobility in bulk heterojunction polymer solar cells

Author(s):  
Christian Kästner ◽  
Xuechen Jiao ◽  
Daniel A. M. Egbe ◽  
Harald Ade ◽  
Harald Hoppe
2015 ◽  
Vol 24 ◽  
pp. 125-130 ◽  
Author(s):  
Jun Yan ◽  
Guoping Luo ◽  
Biao Xiao ◽  
Hongbin Wu ◽  
Zhicai He ◽  
...  

2015 ◽  
Vol 27 (34) ◽  
pp. 4989-4996 ◽  
Author(s):  
Jason Seifter ◽  
Yanming Sun ◽  
Hyosung Choi ◽  
Byoung Hoon Lee ◽  
Thanh Luan Nguyen ◽  
...  

2012 ◽  
Vol 138 (1) ◽  
pp. 38-43
Author(s):  
Wenbin Guo ◽  
Liang Shen ◽  
Caixia Liu ◽  
Shengping Ruan ◽  
Weiyou Chen

2015 ◽  
Vol 3 (6) ◽  
pp. 2960-2970 ◽  
Author(s):  
Pieter Verstappen ◽  
Jurgen Kesters ◽  
Wouter Vanormelingen ◽  
Gaël H. L. Heintges ◽  
Jeroen Drijkoningen ◽  
...  

Quinoxaline fluorination leads to enhanced properties and efficiencies in PCPDTQx-based polymer solar cells.


2019 ◽  
Author(s):  
Mohd Taukeer Khan ◽  
Manuel Salado ◽  
Abdullah R. D. Almohammedi ◽  
Samrana Kazim ◽  
Shahzada Ahmad

<p>The electron and hole selective contact (SC) play a pivotal role in the performance of perovskite solar cells. In order to separate the interfacial phenomenon from bulk, the influence of charge SC was elucidated, by means of impedance spectroscopy. The specific role played by TiO<sub>2</sub> and <i>Spiro-OMeTAD</i> as electron and hole SC in perovskite solar cells was investigated at short circuit condition at different temperatures. We have probed MAPbI<sub>3</sub> and (FAPbI<sub>3</sub>)<sub>0.85</sub>(MAPbBr<sub>3</sub>)<sub>0.15 </sub>and elucidated parameters such as charge carrier mobility, recombination resistance, time constant and charge carrier kinetics in perovskite layer and at the interface of perovskite/SC. Charge carrier mobility in mixed perovskite was found to be nearly two order of magnitude higher as compared to MAPbI<sub>3</sub>. Moreover, the carrier mobility in devices with only electron SC was found to be higher as compared only hole SC. The charge accumulation at TiO<sub>2</sub>/perovskite/<i>Spiro</i>-OMeTAD interfaces were studied via frequency dependent capacitance, revealing higher charge accumulation at perovskite/S<i>piro</i>-OMeTAD than at TiO<sub>2</sub>/perovskite interface. By performing varying temperature frequency dependent capacitance measurements the distribution of density of state within the bandgap of the perovskites, the emission rate of electrons from the trap states and traps activation energy was determined. </p>


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