InGaAs quantum-well-laser strain and temperature profile investigated by microprobe optical spectroscopy

1996 ◽  
Author(s):  
M. Lugarà
Keyword(s):  
Quantum Well ◽  
Temperature Profile ◽  
Optical Spectroscopy ◽  
Quantum Well Laser ◽  
Ingaas Quantum Well

1.58μm InGaAs quantum well laser on GaAs

2007 ◽  
Vol 91 (22) ◽  
pp. 221101 ◽  
Author(s):  
I. Tångring ◽  
H. Q. Ni ◽  
B. P. Wu ◽  
D. H. Wu ◽  
Y. H. Xiong ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Laser ◽  
Ingaas Quantum Well

Fully Planar Ion-Implanted 0.98 μm Strained Quantum Well Laser

1993 ◽  
Vol 300 ◽  
Author(s):  
W. S. Hobson ◽  
S. J. Pearton ◽  
F. Ren ◽  
S. N. G. Chu ◽  
R. Bylsma ◽  
...  
Keyword(s):  
Quantum Well ◽  
Diffusion Process ◽  
Dislocation Loops ◽  
Laser Fabrication ◽  
Advantages And Disadvantages ◽  
Quantum Well Laser ◽  
Optical Isolation ◽  
Lift Off ◽  
Strained Quantum Well ◽  
Ingaas Quantum Well

ABSTRACTGaAs-InGaAs quantum well laser structures were fabricated using a 5 MeV O+ implant (∼1015 cm−2 dose) to disorder the quantum well for optical isolation upon post-implant annealing. End-of-range disorder is placed in the underlying substrate, and consisted of small dislocation loops. Electrical isolation was provided by a subsequent multiple energy (40-300 keV) O+ implant scheme. Masking for both implant steps was obtained using a lift-off Au deposition. This fully planar process is considerably simpler than the Si diffusion process for quantum well disordering that is commonly employed for 0.98 gim laser fabrication. A discussion will be given of the relative advantages and disadvantages of the two processes, with particular emphasis on reliability issues.

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