Effects of light intensity on disparity for depth extraction in monochrome CMOS image sensor with offset pixel apertures

2019 ◽  
Author(s):  
Jimin Lee ◽  
Sang-Hwan Kim ◽  
Seunghyuk Chang ◽  
JongHo Park ◽  
Sang-Jin Lee ◽  
...  
Keyword(s):  
Light Intensity ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Depth Extraction

Effects of aperture size on the performance of CMOS image sensor with pixel aperture for depth extraction

2018 ◽  
Author(s):  
Byoung-Soo Choi ◽  
Sang-Hwan Kim ◽  
Jimin Lee ◽  
Donghyun Seong ◽  
Seunghyuk Chang ◽  
...  
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor ◽  
Aperture Size ◽  
Depth Extraction

CMOS image sensor with off-center circular apertures for depth extraction

2019 ◽  
Author(s):  
Byoung-Soo Choi ◽  
Jimin Lee ◽  
Sang-Hwan Kim ◽  
Jewon Lee ◽  
Junwoo Lee ◽  
...  
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor ◽  
Depth Extraction

scholarly journals Analysis of Disparity Information for Depth Extraction Using CMOS Image Sensor with Offset Pixel Aperture Technique

Sensors ◽  
2019 ◽  
Vol 19 (3) ◽  
pp. 472 ◽  
Author(s):  
Byoung-Soo Choi ◽  
Jimin Lee ◽  
Sang-Hwan Kim ◽  
Seunghyuk Chang ◽  
JongHo Park ◽  
...  
Keyword(s):  
Geometric Model ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Image Sensor ◽  
Color Pattern ◽  
Image Sensor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Color Information ◽  
Depth Extraction ◽  
Measurement Results

A complementary metal oxide semiconductor (CMOS) image sensor (CIS), using offset pixel aperture (OPA) technique, was designed and fabricated using the 0.11-µm CIS process. In conventional cameras, an aperture is located on the camera lens. However, in a CIS camera using OPA technique, apertures are integrated as left-offset pixel apertures (LOPAs) and right-offset pixel apertures (ROPAs). A color pattern is built, comprising LOPA, blue, red, green, and ROPA pixels. The disparity information can be acquired from the LOPA and ROPA channels. Both disparity information and two-dimensional (2D) color information can be simultaneously acquired from the LOPA, blue, red, green, and ROPA channels. A geometric model of the OPA technique is constructed to estimate the disparity of the image, and the measurement results are compared with the estimated results. Depth extraction is thus achieved by a single CIS using the OPA technique, which can be easily adapted to commercial CIS cameras.

Development of Wafer Level Chip Size Packaging Process and its Application to the CMOS Image Sensor Module for Medical Device

2017 ◽  
Vol 137 (2) ◽  
pp. 48-58
Author(s):  
Noriyuki Fujimori ◽  
Takatoshi Igarashi ◽  
Takahiro Shimohata ◽  
Takuro Suyama ◽  
Kazuhiro Yoshida ◽  
...  
Keyword(s):  
Medical Device ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Wafer Level ◽  
Packaging Process ◽  
Sensor Module ◽  
Chip Size

An Over 120dB Dynamic Range Linear Response Single Exposure CMOS Image Sensor with Two-stage Lateral Overflow Integration Trench Capacitors

2020 ◽  
Vol 2020 (7) ◽  
pp. 143-1-143-6 ◽  
Author(s):  
Yasuyuki Fujihara ◽  
Maasa Murata ◽  
Shota Nakayama ◽  
Rihito Kuroda ◽  
Shigetoshi Sugawa
Keyword(s):  
Linear Response ◽  
Dynamic Range ◽  
Signal To Noise Ratio ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Signal To Noise ◽  
Single Exposure ◽  
Two Stage ◽  
Noise Ratio ◽  
Maximum Signal

This paper presents a prototype linear response single exposure CMOS image sensor with two-stage lateral overflow integration trench capacitors (LOFITreCs) exhibiting over 120dB dynamic range with 11.4Me- full well capacity (FWC) and maximum signal-to-noise ratio (SNR) of 70dB. The measured SNR at all switching points were over 35dB thanks to the proposed two-stage LOFITreCs.

Extending Electrical Scanning Probe Microscopy Measurements of Semiconductor Devices Using Microwave Impedance Microscopy

2015 ◽  
Author(s):  
Benedict Drevniok ◽  
St. John Dixon-Warren ◽  
Oskar Amster ◽  
Stuart L Friedman ◽  
Yongliang Yang
Keyword(s):  
Scanning Probe Microscopy ◽  
Semiconductor Devices ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Scanning Probe ◽  
Cross Sectional ◽  
Probe Microscopy ◽  
Dopant Profiling ◽  
Capacitance Voltage

Abstract Scanning microwave impedance microscopy was used to analyze a CMOS image sensor sample to reveal details of the dopant profiling in planar and cross-sectional samples. Sitespecific capacitance-voltage spectroscopy was performed on different regions of the samples.

A 10-bit ratio-independent cyclic ADC with offset canceling for a CMOS image sensor

2014 ◽  
Vol 35 (3) ◽  
pp. 035005 ◽  
Author(s):  
Kaiming Nie ◽  
Suying Yao ◽  
Jiangtao Xu ◽  
Zhaorui Jiang
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor ◽  
Cyclic Adc
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