Strain relaxation caused by defects in InGaN-based multiple-quantum-well near-ultraviolet light-emitting diodes investigated by macroscopic characterization (Conference Presentation)

Author(s):  
A. B. M. Hamidul Islam ◽  
Dong-Soo Shin ◽  
Joon Seop Kwak ◽  
Jong-In Shim
2019 ◽  
Vol 9 (5) ◽  
pp. 871 ◽  
Author(s):  
Abu Islam ◽  
Dong-Soo Shim ◽  
Jong-In Shim

We investigate the differences in optoelectronic performances of InGaN/AlGaN multiple-quantum-well (MQW) near-ultraviolet light-emitting diodes by using samples with different indium compositions. Various macroscopic characterizations have been performed to show that the strain-induced piezoelectric field (FPZ), the crystal quality, and the internal quantum efficiency increase with the sample’s indium composition. This improved performance is owing to the carrier recombination at relatively defect-free indium-rich localized sites, caused by the local in-plane potential-energy fluctuation in MQWs. The potential-energy fluctuation in MQWs are considered to be originating from the combined effects of the inhomogeneous distribution of point defects, FPZ, and indium compositions.


2003 ◽  
Vol 83 (17) ◽  
pp. 3456-3458 ◽  
Author(s):  
JianPing Zhang ◽  
Shuai Wu ◽  
Shiva Rai ◽  
Vasavi Mandavilli ◽  
Vinod Adivarahan ◽  
...  

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