Visualization of defects in nitride semiconductors by electron channeling (Conference Presentation)

2020 ◽  
Author(s):  
Carol Trager-Cowan ◽  
Aeshah Alasamari ◽  
William Avis ◽  
Jochen Bruckbauer ◽  
Paul Edwards ◽  
...  
Keyword(s):  
Nitride Semiconductors ◽  
Electron Channeling

scholarly journals Electron Channeling Contrast Imaging of Defects in III-Nitride Semiconductors

2014 ◽  
Vol 20 (S3) ◽  
pp. 1024-1025
Author(s):  
C. Trager-Cowan ◽  
G. Naresh-Kumar ◽  
N. Allehiani ◽  
S. Kraeusel ◽  
B. Hourahine ◽  
...  
Keyword(s):  
Nitride Semiconductors ◽  
Contrast Imaging ◽  
Electron Channeling

Electron Channeling Patterns

1977 ◽  
Vol 35 ◽  
pp. 12-13
Author(s):  
David C. Joy
Keyword(s):  
Electron Diffraction ◽  
Incidence Angle ◽  
Photographic Plate ◽  
Diffraction Effect ◽  
Angle Of Incidence ◽  
Bulk Single Crystal ◽  
Time Resolved ◽  
Electron Channeling ◽  
Spatially Resolved ◽  
Large Bulk

Electron channeling patterns (ECP) were first found by Coates (1967) while observing a large bulk, single crystal of silicon in a scanning electron microscope. The geometric pattern visible was shown to be produced as a result of the changes in the angle of incidence, between the beam and the specimen surface normal, which occur when the sample is examined at low magnification (Booker, Shaw, Whelan and Hirsch 1967).A conventional electron diffraction pattern consists of an angularly resolved intensity distribution in space which may be directly viewed on a fluorescent screen or recorded on a photographic plate. An ECP, on the other hand, is produced as the result of changes in the signal collected by a suitable electron detector as the incidence angle is varied. If an integrating detector is used, or if the beam traverses the surface at a fixed angle, then no channeling contrast will be observed. The ECP is thus a time resolved electron diffraction effect. It can therefore be related to spatially resolved diffraction phenomena by an application of the concepts of reciprocity (Cowley 1969).

Rapid misfit dislocation characterization in heteroepitaxial III-V/Si thin films by electron channeling contrast imaging

2014 ◽  
Vol 104 (23) ◽  
pp. 232111 ◽  
Author(s):  
Santino D. Carnevale ◽  
Julia I. Deitz ◽  
John A. Carlin ◽  
Yoosuf N. Picard ◽  
Marc De Graef ◽  
...  
Keyword(s):  
Thin Films ◽  
Misfit Dislocation ◽  
Contrast Imaging ◽  
Electron Channeling

scholarly journals Quantitative misfit dislocation characterization with electron channeling contrast imaging

2021 ◽  
Vol 27 (S1) ◽  
pp. 912-914
Author(s):  
Ari Blumer ◽  
Marzieh Baan ◽  
Zak Blumer ◽  
Jacob Boyer ◽  
Tyler J. Grassman
Keyword(s):  
Misfit Dislocation ◽  
Contrast Imaging ◽  
Electron Channeling

Optical properties of defects in nitride semiconductors

2015 ◽  
Vol 30 (20) ◽  
pp. 2977-2990 ◽  
Author(s):  
Ingo Tischer ◽  
Matthias Hocker ◽  
Benjamin Neuschl ◽  
Manfred Madel ◽  
Martin Feneberg ◽  
...  
Keyword(s):  
Optical Properties ◽  
Nitride Semiconductors ◽  
Image Position

Abstract

Iodine Modified Carbon Nitride Semiconductors as Visible Light Photocatalysts for Hydrogen Evolution

2013 ◽  
Vol 26 (5) ◽  
pp. 805-809 ◽  
Author(s):  
Guigang Zhang ◽  
Mingwen Zhang ◽  
Xinxin Ye ◽  
Xiaoqing Qiu ◽  
Sen Lin ◽  
...  
Keyword(s):  
Visible Light ◽  
Hydrogen Evolution ◽  
Carbon Nitride ◽  
Nitride Semiconductors

Electron channeling radiation from diamonds with and without platelets

1985 ◽  
Vol 57 (5) ◽  
pp. 1661-1664 ◽  
Author(s):  
H. Park ◽  
J. O. Kephart ◽  
R. K. Klein ◽  
R. H. Pantell ◽  
B. L. Berman ◽  
...  
Keyword(s):  
Electron Channeling ◽  
Channeling Radiation
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