MACH 2: Mach-Zehnder analog correlator for heterodyne infrared interferometry

Author(s):  
Guillaume Bourdarot ◽  
Jean-Philippe Berger ◽  
Hugues Guillet de Chatellus ◽  
Jean-Baptiste Le Bouquin
2010 ◽  
Vol 6 (S272) ◽  
pp. 56-61
Author(s):  
Jose H. Groh

AbstractWhile theoretical studies have long suggested a fast-rotating nature of Luminous Blue Variables (LBVs), observational confirmation of fast rotation was not detected until recently. Here I discuss the diagnostics that have allowed us to constrain the rotational velocity of LBVs: broadening of spectral lines and latitude-dependent variations of the wind density structure. While rotational broadening can be directly detected using high-resolution spectroscopy, long-baseline near-infrared interferometry is needed to directly measure the shape of the latitude-dependent photosphere that forms in a fast-rotating star. In addition, complex 2-D radiative transfer models need to be employed if one's goal is to constrain rotational velocities of LBVs. Here I illustrate how the above methods were able to constrain the rotational velocities of the LBVs AG Carinae, HR Carinae, and Eta Carinae.


2003 ◽  
Author(s):  
Vincent Coude du Foresto ◽  
Jean L. Schneider ◽  
Guy S. Perrin ◽  
Pierre J. Lena ◽  
Anne Dutrey

2019 ◽  
Vol 2019 (1) ◽  
pp. 000444-000449
Author(s):  
D. Alliata ◽  
N. Anderson ◽  
M. Durand de Gevigney ◽  
I. Bergoend ◽  
P. Gastaldo

Abstract Process control solutions to secure the High-Volume Manufacturing of Gallium Nitride (GaN) devices for power applications are a must today. Unity recently developed and introduced on the market a total control solution that address both defectivity and metrology needs of GaN industry. Proprietary technologies like Phase Shift Deflectometry, darkfield inspection, confocal chromatic imaging and infrared interferometry are here explored to detect killer defects potentially affecting the gallium nitride wafer. More in detail, we characterized Gallium nitride on Silicon substrate before and after the fabrication of the final device and demonstrated how the fabrication process can be optimized.


2018 ◽  
Vol 46 (3) ◽  
pp. 381-387
Author(s):  
Jörg-Uwe Pott ◽  
Jean Surdej

1979 ◽  
Vol 50 (8) ◽  
pp. 997-1001 ◽  
Author(s):  
J. M. Ramsey ◽  
G. M. Hieftje ◽  
G. R. Haugen

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