Simulation of resist heating using TEMPTATION software with different models of electron-beam energy deposition

Author(s):  
Igor Y. Kuzmin
1982 ◽  
Vol 13 ◽  
Author(s):  
D. Barbierf ◽  
M. Baghdadi ◽  
A. Laugier ◽  
A. Cachard

ABSTRACTIn this work Pulsed Electron Beam Annealing has been used to Sctivaye As implanted in (100) and (111) silicon (140 keV- 1015 cm−2 ). With a selected electron beam energy deposition profile excellent regrowth layer quality and As activation has been obtained in the 1.2–1.4 J/cm2 fluence range. As redistribution is conistent with the melting model assuming a diffusivity of 10−4 cm2/s in liquid silicon. As losses might slightly reduce the carrier concentration near the surface in the case of (100) silicon. However a shallow and highly active N+ layer have been achieved with optimized PEBA conditions.


1975 ◽  
Vol 22 (4) ◽  
pp. 201-202 ◽  
Author(s):  
W.L. Chadsey ◽  
K.F. Galloway ◽  
R.L. Pease

1991 ◽  
Vol 19 (3P1) ◽  
pp. 440-448 ◽  
Author(s):  
M. I. Avramenko ◽  
V. A. Burtsev ◽  
P. A. Ivanov ◽  
N. I. Kazachenko ◽  
V. S. Kuznetsov

1979 ◽  
Author(s):  
E.J.T. Burns ◽  
S.A. Goldstein ◽  
J.A. Halbleib ◽  
L.P. Mix ◽  
J.N. Olsen ◽  
...  

1991 ◽  
Vol 20 (2) ◽  
pp. 258-258
Author(s):  
M. I. Avramenko ◽  
V. A. Burtsev ◽  
P. A. Ivanov ◽  
N. I. Kazachenko ◽  
V. S. Kuznetsov

1979 ◽  
Vol 43 (5) ◽  
pp. 357-360 ◽  
Author(s):  
M. M. Widner ◽  
Steven A. Goldstein ◽  
C. W. Mendel ◽  
E. J. T. Burns ◽  
J. P. Quintenz ◽  
...  

1979 ◽  
Vol 40 (C7) ◽  
pp. C7-777-C7-778
Author(s):  
G. Fournier ◽  
J. Bonnet ◽  
J. Bridet ◽  
J. Fort ◽  
D. Pigache

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