Analytic Properties of the Effective Dielectric Constant of a Two-Dimensional Rayleigh Model

2005 ◽  
Vol 100 (4) ◽  
pp. 731 ◽  
Author(s):  
B. Ya. Balagurov
2006 ◽  
Vol 138 (4) ◽  
pp. 205-210 ◽  
Author(s):  
Yong Zeng ◽  
Ying Fu ◽  
Xiaoshuang Chen ◽  
Wei Lu

Author(s):  
Aakashdeep ◽  
Saurav Kr. Basu ◽  
G. V. Ujjwal ◽  
Sakshi Kumari ◽  
V. R. Gupta

1992 ◽  
Vol 258 ◽  
Author(s):  
Z. Jing ◽  
J. L. Whitten ◽  
G. Lucovsky

ABSTRACTWe have performed ab initio calculations and determined the bond-energies and vibrational frequencies of Si-H groups that are: i) attached to Si-atoms as their immediate, and also more distant neighbors; and ii) attached to three O-atoms as their immediate neighbors, but are connected to an all Si-atom matrix. These arrangements simulate bonding geometries on Si surfaces, and the calculated frequency for i) is in good agreement with that of an Si-H group on an Si surface. To compare these results with a-Si:H alloys it is necessary to take into account an additional factor: the effective dielectric constant of the host. We show how to do this, demonstrating the way results of the ab initio calculations should then be compared with experimental data.


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