Effect of the external electric field on the kinetics of recombination of photoexcited carriers in a ZnSe/BeTe type II heterostructure

JETP Letters ◽  
2012 ◽  
Vol 94 (12) ◽  
pp. 858-862 ◽  
Author(s):  
E. V. Filatov ◽  
A. A. Maksimov ◽  
I. I. Tartakovskii ◽  
D. R. Yakovlev ◽  
A. Waag
2005 ◽  
Author(s):  
D. V. Gulyaev ◽  
A. K. Bakarov ◽  
A. V. Tsarev ◽  
K. S. Zhuravlev
Keyword(s):  
Type Ii ◽  

2019 ◽  
Vol 21 (15) ◽  
pp. 7765-7772 ◽  
Author(s):  
Yuting Wei ◽  
Fei Wang ◽  
Wenli Zhang ◽  
Xiuwen Zhang

The 0.52/0.83 eV direct bandgap of P/PbI2 possesses a type-II band alignment, can effectively be regulated to 0.90/1.54 eV using an external electric field in DFT/HSE06, and is useful for solar energy and optoelectronic devices.


2001 ◽  
Vol 232 (1-4) ◽  
pp. 250-255 ◽  
Author(s):  
M Taleb ◽  
C Didierjean ◽  
C Jelsch ◽  
J.P Mangeot ◽  
A Aubry

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