Kinetics of accumulation of excess holes under photoexcitation and their relaxation in GaAs/AlGaAs shallow quantum wells

JETP Letters ◽  
2015 ◽  
Vol 101 (3) ◽  
pp. 183-188 ◽  
Author(s):  
M. V. Kochiev ◽  
V. A. Tsvetkov ◽  
N. N. Sibeldin
Keyword(s):  
Quantum Wells ◽  
Kinetics Of

Specific features of the spectra and relaxation kinetics of long-wavelength photoconductivity in narrow-gap HgCdTe epitaxial films and heterostructures with quantum wells

2013 ◽  
Vol 47 (11) ◽  
pp. 1438-1441 ◽  
Author(s):  
V. V. Rumyantsev ◽  
A. V. Ikonnikov ◽  
A. V. Antonov ◽  
S. V. Morozov ◽  
M. S. Zholudev ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Epitaxial Films ◽  
Narrow Gap ◽  
Relaxation Kinetics ◽  
Long Wavelength ◽  
Kinetics Of

The Growth of AIGaAs/GaAs Heterostructures By Atomic Layer Epitaxy

1987 ◽  
Vol 102 ◽  
Author(s):  
S. P. Denbaars ◽  
A. Hariz ◽  
C. Beyler ◽  
B. Y. Maa ◽  
Q. Chen ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Active Regions ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
High Quality ◽  
Monolayer Growth ◽  
Low Threshold ◽  
Kinetics Of

ABSTRACTThe kinetics of atomic layer epitaxy (ALE) of GaAs utilizing trimethylgallium and arsine are described. The results show that saturated monolayer growth can be achieved-in the temperature range 445°C -485°C and that high quality materials can be grown.. Hybrid A1GaAs/GaAs heterostructures have been grown utilizing ALE for the active regions and conventional metalorganic chemical vapor deposition (MOCVD) for the confining regions that yield high quality quantum wells and low threshold quantum well lasers.

Photoluminescence kinetics of indirect excitons inGaAs/AlxGa1−xAscoupled quantum wells

1999 ◽  
Vol 59 (3) ◽  
pp. 1625-1628 ◽  
Author(s):  
L. V. Butov ◽  
A. Imamoglu ◽  
A. V. Mintsev ◽  
K. L. Campman ◽  
A. C. Gossard
Keyword(s):  
Quantum Wells ◽  
Indirect Excitons ◽  
Kinetics Of

scholarly journals Investigation of Femtosecond IR Radiation Two-Photon Absorption by Pump-Probe Method in GaAs (001) Plate Reflection

2019 ◽  
Vol 14 (4) ◽  
pp. 82-90
Author(s):  
N. N. Rubtsova ◽  
G. M. Borisov ◽  
D. V. Ledovskikh
Keyword(s):  
Quantum Wells ◽  
Average Power ◽  
Photon Absorption ◽  
Ir Radiation ◽  
Central Wavelength ◽  
Pump Probe ◽  
Two Photon Absorption ◽  
Two Photon ◽  
Femtosecond Radiation ◽  
Kinetics Of

The reflection of probe infrared femtosecond radiation pulses from a gallium arsenide substrate of the (001) orientation in the presence of more powerful pump pulses of the same radiation with a peak power of up to 1 GW/cm2 was investigated. A Yb3+:KY(WO4)2 laser with a central wavelength of 1 035 nm, a repetition rate of 70 MHz, a pulse duration of 130 fs, and an average power of not more than 0.9 W worked in the GaAs transparency region. The experimental dependence of the recorded signal on the pump radiation intensity is in qualitative agreement with the model dependence for two-photon absorption. The results are important for the correct interpretation of reflectivity kinetics of quantum wells.

Coherent control and quantum kinetics of LO-phonon emission in CdZnTe quantum wells

2007 ◽  
Vol 32 (2-3) ◽  
pp. 119-121
Author(s):  
P. Gilliot ◽  
C. Brimont ◽  
S. Cronenberger ◽  
O. Crégut ◽  
M. Gallart ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Coherent Control ◽  
Phonon Emission ◽  
Quantum Kinetics ◽  
Kinetics Of

Kinetics of compositional disordering of AlGaAs/GaAs quantum wells induced by low‐temperature grown GaAs

1995 ◽  
Vol 77 (9) ◽  
pp. 4302-4306 ◽  
Author(s):  
J. S. Tsang ◽  
C. P. Lee ◽  
S. H. Lee ◽  
K. L. Tsai ◽  
H. R. Chen
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Kinetics Of ◽  
Low Temperature Grown Gaas

Kinetics of an exciton-trion system in shallow GaAs/AlGaAs quantum wells

2007 ◽  
Vol 71 (1) ◽  
pp. 93-95
Author(s):  
N. N. Sibel’din ◽  
M. L. Skorikov ◽  
V. A. Tsvetkov
Keyword(s):  
Quantum Wells ◽  
Kinetics Of
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