scholarly journals Intrinsic Geometry and Boundary Structure of Plane Domains

2021 ◽  
Vol 62 (4) ◽  
pp. 691-706
Author(s):  
O. Rainio ◽  
T. Sugawa ◽  
M. Vuorinen
Author(s):  
P. Humble

There has been sustained interest over the last few years into both the intrinsic (primary and secondary) structure of grain boundaries and the extrinsic structure e.g. the interaction of matrix dislocations with the boundary. Most of the investigations carried out by electron microscopy have involved only the use of information contained in the transmitted image (bright field, dark field, weak beam etc.). Whilst these imaging modes are appropriate to the cases of relatively coarse intrinsic or extrinsic grain boundary dislocation structures, it is apparent that in principle (and indeed in practice, e.g. (1)-(3)) the diffraction patterns from the boundary can give extra independent information about the fine scale periodic intrinsic structure of the boundary.In this paper I shall describe one investigation into each type of structure using the appropriate method of obtaining the necessary information which has been carried out recently at Tribophysics.


Author(s):  
D. Cherns

The use of high resolution electron microscopy (HREM) to determine the atomic structure of grain boundaries and interfaces is a topic of great current interest. Grain boundary structure has been considered for many years as central to an understanding of the mechanical and transport properties of materials. Some more recent attention has focussed on the atomic structures of metalsemiconductor interfaces which are believed to control electrical properties of contacts. The atomic structures of interfaces in semiconductor or metal multilayers is an area of growing interest for understanding the unusual electrical or mechanical properties which these new materials possess. However, although the point-to-point resolutions of currently available HREMs, ∼2-3Å, appear sufficient to solve many of these problems, few atomic models of grain boundaries and interfaces have been derived. Moreover, with a new generation of 300-400kV instruments promising resolutions in the 1.6-2.0 Å range, and resolutions better than 1.5Å expected from specialist instruments, it is an appropriate time to consider the usefulness of HREM for interface studies.


Author(s):  
D.R. Rasmussen ◽  
N.-H. Cho ◽  
C.B. Carter

Domains in GaAs can exist which are related to one another by the inversion symmetry, i.e., the sites of gallium and arsenic in one domain are interchanged in the other domain. The boundary between these two different domains is known as an antiphase boundary [1], In the terminology used to describe grain boundaries, the grains on either side of this boundary can be regarded as being Σ=1-related. For the {110} interface plane, in particular, there are equal numbers of GaGa and As-As anti-site bonds across the interface. The equilibrium distance between two atoms of the same kind crossing the boundary is expected to be different from the length of normal GaAs bonds in the bulk. Therefore, the relative position of each grain on either side of an APB may be translated such that the boundary can have a lower energy situation. This translation does not affect the perfect Σ=1 coincidence site relationship. Such a lattice translation is expected for all high-angle grain boundaries as a way of relaxation of the boundary structure.


Author(s):  
Z. Horita ◽  
D. J. Smith ◽  
M. Furukawa ◽  
M. Nemoto ◽  
R. Z. Valiev ◽  
...  

It is possible to produce metallic materials with submicrometer-grained (SMG) structures by imposing an intense plastic strain under quasi-hydrostatic pressure. Studies using conventional transmission electron microscopy (CTEM) showed that many grain boundaries in the SMG structures appeared diffuse in nature with poorly defined transition zones between individual grains. The implication of the CTEM observations is that the grain boundaries of the SMG structures are in a high energy state, having non-equilibrium character. It is anticipated that high-resolution electron microscopy (HREM) will serve to reveal a precise nature of the grain boundary structure in SMG materials. A recent study on nanocrystalline Ni and Ni3Al showed lattice distortion and dilatations in the vicinity of the grain boundaries. In this study, HREM observations are undertaken to examine the atomic structure of grain boundaries in an SMG Al-based Al-Mg alloy.An Al-3%Mg solid solution alloy was subjected to torsion straining to produce an equiaxed grain structure with an average grain size of ~0.09 μm.


Author(s):  
Masaru Itakura ◽  
Noriyuki Kuwano ◽  
Kensuke Oki

The low temperature phase of Pd5Ce (L-Pd5Ce) has a one-dimensional long period superstructure (1D-LPS) derived from Ll2. The periodic antiphase boundaries (APBs) are parallel to (110) planes and have a shift vector of 1/2[110]. Hereafter, the indices are referred to the basic lattices of Ll2 As insertion of the APB causes a change in composition, such an APB is called “non-conservative”. Then, a domain size M depends upon the Ce concentration in the alloy. It was found that M increases also with temperature. The temperature dependency of M is attributed to a change of the degree of order within the antiphase domains. In this work, morphology of the non-conservative APBs is observed to clarify the formation process of the 1D-LPS.The alloy of Pd-16.7 at%Ce was prepared by arc melting in argon atmosphere. Disc specimens made from the alloy ingot were first held at 985 K for 260 ks and quenched in iced water to obtain the state of M=∞ or Ll2, followed by annealing for various lengths of time. The annealing temperature was 873 K where the equilibrium value for M is about 3 in unit of (110) lattice spacing of Ll2. Observation was carried out using microscopes JEM-2000FX, JEM-4000EX (HVEM Lab., Kyushu Univ.) and JEM-2000EX (Dept. of Mater. Sci. Tech., Kyushu Univ.).


Author(s):  
Yimei Zhu ◽  
Masaki Suenaga ◽  
R. L. Sabatini ◽  
Youwen Xu

The (110) twin structure of YBa2Cu3O7 superconductor oxide, which is formed to reduce the strain energy of the tetragonal to orthorhombic phase transformation by alternating the a-b crystallographic axis across the boundary, was extensively investigated. Up to now the structure of the twin boundary still remained unclear. In order to gain insight into the nature of the twin boundary in Y-Ba-Cu-O system, a study using electron diffraction techniques including optical and computed diffractograms, as well as high resolution structure imaging techniques with corresponding computer simulation and processing was initiated.Bulk samples of Y-Ba-Cu-O oxide were prepared as described elsewhere. TEM specimens were produced by crushing bulk samples into a fine powder, dispersing the powder in acetone, and suspending the fine particles on a holey carbon grid. The electron microscopy during this study was performed on both a JEOL 2000EX and 2000FX electron microscopes operated at 200 kV.


Author(s):  
Diane M. Vanderwalker

There is a widespread interest in understanding the properties of Al-base alloys so that progress can be made toward extending their present applications in the aircraft industry. Al-Zn-Mg is precipitation hardened to gain its high strength; however, during aging the formation of heterogeneous precipitates on the grain boundaries creates a precipitate-free zone in the adjacent region. Since high angle grain boundaries are not easily characterized, it is difficult to establish a relationship between the precipitate and the boundary structure. Therefore, this study involves precipitation on low angle grain boundaries where the boundary and the precipitate can be fully analyzed.


Author(s):  
Brian Ralph ◽  
Barlow Claire ◽  
Nicola Ecob

This brief review seeks to summarize some of the main property changes which may be induced by altering the grain structure of materials. Where appropriate an interpretation is given of these changes in terms of current theories of grain boundary structure, and some examples from current studies are presented at the end of this paper.


1975 ◽  
Vol 36 (C4) ◽  
pp. C4-17-C4-22 ◽  
Author(s):  
R. W. BALLUFFI ◽  
P. J. GOODHEW ◽  
T. Y. TAN ◽  
W. R. WAGNER

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