Manifestation of excess centers of electron-hole pair generation resulting from field and thermal stresses and their subsequent annihilation in dynamic current-voltage characteristics of Si-MOS structures with ultrathin oxide
2000 ◽
Vol 47
(6)
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pp. 2575-2579
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Keyword(s):
2007 ◽
Keyword(s):
1972 ◽
Vol 19
(4)
◽
pp. 9-19
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Keyword(s):