FIRST-PRINCIPLES CALCULATIONS FOR THE STRUCTURAL AND ELECTRONIC PROPERTIES OF ScxAl1-xN ALLOYS

2013 ◽  
Vol 24 (10) ◽  
pp. 1350074 ◽  
Author(s):  
REZEK MOHAMMAD ◽  
ŞENAY KATIRCIOĞLU

The first-principles calculations based on Density Functional Theory (DFT) within generalized gradient approximation (GGA) of Engel–Vosko–Perdew–Wang and modified exact exchange potential of Becke–Johnson have been introduced for the structural and electronic properties of the Sc x Al 1-x N alloys, respectively. The present lattice constants calculated for the ScAlN alloys and the end compounds ( AlN and ScN ) are found to be in very good agreement with the available experimental and theoretical ones. The stable ground state structures of the Sc x Al 1-x N alloys are determined to be wurtzite for the Sc concentration less than ~0.403 and rock-salt for the higher Sc concentrations. The present electronic band structure calculations within Becke–Johnson scheme are found to be capable of providing energy band gaps of the AlN and ScN compounds very close to the ones of the available experiments and expensive calculations. According to the calculations of Becke–Johnson potential, the Sc x Al 1-x N alloys in the wurtzite and zinc-blende structures are direct band gap materials for the Sc concentrations in the ranges of (0.056 ≤ x ≤ 0.833) and (0.03125 ≤ x ≤ 0.0625, 0.375 ≤ x ≤ 0.96875), respectively. However, the ScAlN alloys in the rock-salt phase are determined to be direct band gap materials for total range of the Sc concentration considered in this work. While the energy gaps of the RS- AlScN alloys are found to be extending from near ultraviolet to near infrared with a large (negative) bowing, the ones of the WZ- AlScN and ZB- AlScN alloys are determined to be varying in a small energy range around near ultraviolet with a small (negative) bowing.

RSC Advances ◽  
2015 ◽  
Vol 5 (102) ◽  
pp. 83876-83879 ◽  
Author(s):  
Chengyong Xu ◽  
Paul A. Brown ◽  
Kevin L. Shuford

We have investigated the effect of uniform plane strain on the electronic properties of monolayer 1T-TiS2using first-principles calculations. With the appropriate tensile strain, the material properties can be transformed from a semimetal to a direct band gap semiconductor.


2010 ◽  
Vol 24 (24) ◽  
pp. 4851-4859
Author(s):  
KAIHUA HE ◽  
GUANG ZHENG ◽  
GANG CHEN ◽  
QILI CHEN ◽  
MIAO WAN ◽  
...  

The structural and electronic properties of BN(5, 5) and C(5, 5) nanotubes under pressure are studied by using first principles calculations. In our study range, BN(5, 5) undergoes obvious elliptical distortion, while for C(5, 5) the cross section first becomes an ellipse and then, under further pressure, is flattened. The band gap of BN(5, 5) decreases with increasing pressure, which is inverse to that of zinc blende BN, whereas for C(5, 5) the metallicity is always preserved under high pressure. The population of charge density indicates that intertube bonding is formed under pressure. We also find that BN(5, 5) may collapse, and a new polymer material based on C(5, 5) is formed by applying pressure.


RSC Advances ◽  
2016 ◽  
Vol 6 (98) ◽  
pp. 95846-95854 ◽  
Author(s):  
Wencheng Tang ◽  
Minglei Sun ◽  
Qingqiang Ren ◽  
Yajun Zhang ◽  
Sake Wang ◽  
...  

Using first principles calculations, we predicted that a direct-band-gap between 0.98 and 2.13 eV can be obtained in silicene by symmetrically and asymmetrically (Janus) functionalisation with halogen atoms and applying elastic tensile strain.


Author(s):  
Nguyen Van Chuong ◽  
Nguyen Ngoc Hieu ◽  
Nguyen Van Hieu

This paper constructs a new type of two-dimensional graphene-like Janus GaInSTe monolayer and systematically investigates its structural and electronic properties as well as the effect of external electric field using first-principles calculations. In the ground state, Janus GaInSTe monolayer is dynamically stable with no imaginary frequencies in its phonon spectrum and possesses a direct band gap semiconductor. The band gap of Janus GaInSTe monolayer can be tuned by applying an electric field, which leads the different transitions from semiconductor to metal, and from indirect to direct band gap. These findings show a great potential application of Janus GaInSTe material for designing next-generation devices.


2019 ◽  
Vol 7 (12) ◽  
pp. 3569-3575 ◽  
Author(s):  
Shifeng Qian ◽  
Xiaowei Sheng ◽  
Xian Xu ◽  
Yuxiang Wu ◽  
Ning Lu ◽  
...  

Two-dimensional binary MX2 (M = Ni, Pd and Pt; X = P and As) exhibiting a beautiful pentagonal ring network is discussed through first principles calculations.


2016 ◽  
Vol 18 (38) ◽  
pp. 26736-26742 ◽  
Author(s):  
Hao Sun ◽  
Sankha Mukherjee ◽  
Chandra Veer Singh

Two new graphene allotropes, penta-graphene and phagraphene, have been proposed recently with unique electronic properties,e.g.quasi-direct band gap, direction-dependent Dirac cones and tunable Fermi velocities.


2015 ◽  
Vol 29 (07) ◽  
pp. 1550068
Author(s):  
R. Taghavi Mendi ◽  
M. Majidiyan Sarmazdeh ◽  
S. M. Elahi ◽  
M. R. Abolhassani ◽  
A. Boochani ◽  
...  

In this paper, some structural and electronic properties of V - and Co -doped single-walled ZnO nanotube (8,0), such as cohesive energy, geometric structure, density of states and band structure were investigated using first principles calculations. Our results showed that, first, the pure SWZnONT(8,0) can be stable and second, doped SWZnONTs(8,0) by V and Co atoms are more stable than pure SWZnONT(8,0) and TM impurities distort the structure of nanotubes around the TM impurities. The electronic results showed that pure SWZnONT(8,0) have a direct band gap about 1.443 eV and it is semiconductor. While with substituting V and Co instead of Zn in nanotube, a transition occurs from semiconducting to metallic and half-metallic states which these doped nanotubes as well as their magnetic properties are qualified for using in spintronic devices.


2016 ◽  
Vol 30 (03) ◽  
pp. 1650007
Author(s):  
Naeemullah ◽  
G. Murtaza ◽  
R. Khenata ◽  
S. Bin Omran

For the first time, the electronic and optical properties of the quaternary Be[Formula: see text]Mg[Formula: see text]Zn[Formula: see text]Se alloy have been investigated using first-principles calculations within the framework of density functional theory (DFT). Variations in the direct band gap with the change in [Formula: see text] and [Formula: see text] compositions show agreement with the experimental measurements. Evaluation of the dielectric function and refractive index reveals the optical activity in the visible and ultraviolet energy regions.


2017 ◽  
Vol 31 (18) ◽  
pp. 1750201 ◽  
Author(s):  
Ruike Yang ◽  
Chuanshuai Zhu ◽  
Qun Wei ◽  
Zheng Du

Two novel aluminum nitride (which is bct-AlN at ambient pressure, and h-AlN at higher pressure) were predicted using first-principles calculations. The mechanical and phonon dispersion results indicate that bct-AlN is mechanically and dynamically stable at zero pressure, h-AlN phase can be stabilized by increasing pressure and it is mechanically and dynamically stable at 10 GPa. bct-AlN is more favorable than rs-AlN in thermodynamics at ambient pressure. Our calculated band gap of bct-AlN is 5.85 eV. It can be used as semiconductor device and optoelectronic device due to its inherent wide direct band gap. For bct-AlN, the shortest Al–N bond length is 1.8476 Å and its bond order index is 1.28, which shows that strong covalent bonds are formed between Al atoms and N atoms. Moreover, the anisotropy of Young’s modulus and optical properties can be noticed obviously for bct-AlN.


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