Change of sign in the Casimir interaction of peptide films deposited on a dielectric substrate

2020 ◽  
Vol 35 (03) ◽  
pp. 2040020 ◽  
Author(s):  
E. N. Velichko ◽  
M. A. Baranov ◽  
V. M. Mostepanenko
Keyword(s):  
Free Energy ◽  
Film Thickness ◽  
Silica Glass ◽  
Room Temperature ◽  
Glass Plate ◽  
Pressure Change ◽  
Dielectric Substrate ◽  
Numerical Computations ◽  
Peptide Coatings

The Casimir free energy and pressure of thin peptide films deposited on a dielectric substrate are investigated in the region of parameters where they change their sign. Numerical computations are performed for a modelled peptide film on a silica glass plate. The Casimir free energy is computed at room temperature as a function of the film thickness and the fraction of water contained in the film. It is shown that the values of the Casimir pressure change from negative to positive when the film thickness decreases to below some value in the region from 115 to 133 nm depending on the fraction of water in the film. Possible applications of the obtained results to the problem of stability of peptide coatings are discussed.

(111) Monocrystalline Nickel Films

1972 ◽  
Vol 30 ◽  
pp. 512-513
Author(s):  
T.E. Pratt ◽  
R.W. Vook
Keyword(s):  
Film Thickness ◽  
Deposition Rate ◽  
Room Temperature ◽  
Narrow Range ◽  
High Vacuum ◽  
Residual Pressure ◽  
Temperature Dependent ◽  
Deposition Parameters ◽  
Transmission Electron ◽  
Substrate Temperatures

(111) oriented thin monocrystalline Ni films have been prepared by vacuum evaporation and examined by transmission electron microscopy and electron diffraction. In high vacuum, at room temperature, a layer of NaCl was first evaporated onto a freshly air-cleaved muscovite substrate clamped to a copper block with attached heater and thermocouple. Then, at various substrate temperatures, with other parameters held within a narrow range, Ni was evaporated from a tungsten filament. It had been shown previously that similar procedures would yield monocrystalline films of CU, Ag, and Au.For the films examined with respect to temperature dependent effects, typical deposition parameters were: Ni film thickness, 500-800 A; Ni deposition rate, 10 A/sec.; residual pressure, 10-6 torr; NaCl film thickness, 250 A; and NaCl deposition rate, 10 A/sec. Some additional evaporations involved higher deposition rates and lower film thicknesses.Monocrystalline films were obtained with substrate temperatures above 500° C. Below 450° C, the films were polycrystalline with a strong (111) preferred orientation.

Breakthrough of Sublimation Drying by Liquid Phase Deposition

2021 ◽  
Vol 314 ◽  
pp. 172-177
Author(s):  
Yuta Sasaki ◽  
Yousuke Hanawa ◽  
Masayuki Otsuji ◽  
Naozumi Fujiwara ◽  
Masahiko Kato ◽  
...  
Keyword(s):  
Free Energy ◽  
Liquid Phase ◽  
Film Thickness ◽  
Process Parameters ◽  
Interfacial Free Energy ◽  
The Other ◽  
Liquid Phase Deposition ◽  
Drying Method ◽  
Substrate Side ◽  
Drying Technology

Damage-free drying becomes increasingly difficult with the scaling of semiconductor devices. In this work, we studied a new sublimation drying technology for 3nm node and beyond. In order to investigate the collapse factor by conventional sublimation drying, we observed the pattern with cryo-SEM and revealed that the collapse occurred when the liquid film on the substrate solidified. Based on this result, we considered that it was important to deposit a solidified film uniformly from the substrate side to suppress collapse. Two key process parameters were evaluated to achieve the uniform formation of the solidified film. One is interfacial free energy and the other is film thickness of solution just before solidification. By optimizing two key parameters, it was successfully demonstrated to suppress pattern collapse of challenging devices. In this paper, we report on a new drying method: sublimation drying by LPD (Liquid-phase deposition).

Oil Film Thickness and Rolling Friction in Elastohydrodynamic Point Contact

1971 ◽  
Vol 93 (3) ◽  
pp. 371-379 ◽  
Author(s):  
R. Gohar
Keyword(s):  
Film Thickness ◽  
Tungsten Carbide ◽  
Material Properties ◽  
High Pressures ◽  
Glass Plate ◽  
Point Contact ◽  
Rolling Friction ◽  
Significant Alteration ◽  
Oil Film ◽  
Rolling Ball

The effect of material properties upon the film thickness in elastohydrodynamic point contact is demonstrated with a rolling ball and plate machine. A 220 fold range of Young’s modulus is employed and a maximum Hertzian pressure of 5 × 105 lb f/in2 is reached. The oil film, which is measured by interferometry, shows no significant alteration at such high pressures, and is also fairly insensitive to the choice of bounding materials. Using a technique similar to that employed by Crook, the rolling friction between a tungsten carbide and a glass plate is found and compared with theory. The effect of spin is investigated and found to be slight.

scholarly journals Study of Spectroscopy and Thermodynamic Properties for Phoshours dioxide PO2 Molecular and Influence Study of Bond ( P-O ) on Spectroscopy Properties

2012 ◽  
Vol 9 (4) ◽  
pp. 616-622
Author(s):  
Baghdad Science Journal
Keyword(s):  
Free Energy ◽  
Thermodynamic Properties ◽  
Room Temperature ◽  
Formation Enthalpy ◽  
Heat Of Formation ◽  
Vibration Modes ◽  
Equilibrium Distance ◽  
Atmosphere Pressure ◽  
Gibb’S Free Energy ◽  
Good Agreement

In This research a Spectroscopic complement and Thermodynamic properties for molecule PO2 were studied . That included a calculation of potential energy . From the curve of total energy for molecule at equilibrium distance , for bond (P-O), the degenerated of bond energy was (4.332eV) instate of the vibration modes of ( PO2 ) molecule and frequency that was found active in IR spectra because variable inpolarization and dipole moment for molecule. Also we calculate some thermodynamic parameters of ( PO2 ) such as heat of formation , enthalpy , heat Of capacity , entropy and gibb's free energy Were ( -54.16 kcal/mol , 2366.45 kcal/mol , 10.06 kcal /k/mol , 59.52 kcal /k /mol, -15370.51 kcal / mol ) respectively under condition of room temperature and atmosphere pressure ( 298 k , 1 atm.). We calculate there parameters at various temperature from ( 100 – 3000 ) K . It was found that the obtainded results were in a good agreement with previous experimental facts.

Evaluation of Electrical Contact Material Stability on Mercuric Iodide

1993 ◽  
Vol 302 ◽  
Author(s):  
A. Y. Cheng
Keyword(s):  
Free Energy ◽  
Room Temperature ◽  
Electrical Contact ◽  
Radiation Detection ◽  
Electrical Contacts ◽  
Contact Material ◽  
Mercuric Iodide ◽  
Energy Data ◽  
Contact Materials ◽  
Temperature Radiation

ABSTRACTMercuric iodide detectors are leading candidates for room-temperature radiation detection applications. The inherently reactive nature of mercuric iodide limits the number of materials suitable for fabrication of electrical contacts. The theoretical stabilities of elemental contact materials on mercuric iodide were evaluated at 25°C. Additionally, the stabilities of transparent conductive compounds, for photodetector applications, were studied. Calculations were based on Gibbs free energy data, estimates and a series of hypothesized reactions with mercuric iodide. Leading candidate materials were identified and compared to experimental results.

Growth Front Roughening of Room Temperature Deposited Oligomer Thin Films

2000 ◽  
Vol 648 ◽  
Author(s):  
D. Tsamouras ◽  
G. Palasantzas ◽  
J. Th. M. De Hosson ◽  
G. Hadziioannou
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Room Temperature ◽  
Growth Front ◽  
Silicon Substrates ◽  
Height Distribution ◽  
Force Microscopy ◽  
Atomic Force ◽  
Roughness Amplitude ◽  
Non Gaussian

AbstractGrowth front scaling aspects are investigated for PPV-type oligomer thin films vapor- deposited onto silicon substrates at room temperature. For film thickness d~15-300 nm, commonly used in optoelectronic devices, correlation function measurement by atomic force microscopy yields roughness exponents in the range H=0.45±0.04, and an rms roughness amplitude which evolves with film thickness as a power law σ∝ dβ with β=0.28±0.05. The non-Gaussian height distribution and the measured scaling exponents (H and β) suggest a roughening mechanism close to that described by the Kardar-Parisi-Zhang scenario.

UPS, XPS, AES STUDIES OF Te THIN FILMS DEPOSITED ON Si(100) 2×1

1994 ◽  
Vol 01 (04) ◽  
pp. 589-592 ◽  
Author(s):  
S. DI NARDO ◽  
L. LOZZI ◽  
M. PASSACANTANDO ◽  
P. PICOZZI ◽  
S. SANTUCCI
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Electronic Properties ◽  
Valence Band ◽  
Room Temperature ◽  
Surface States ◽  
Growth Mode ◽  
Characteristic Behavior ◽  
Complete Study ◽  
Nominal Coverage

This work represents the first complete study of the interaction between Te and Si in very thin films of tellurium grown at room temperature on Si(100) 2×1 surfaces. In particular, the electronic properties have been investigated by UPS and XPS measurements and information on growth of tellurium on silicon have been obtained by AES measurements. Our results indicate that the interaction between tellurium and silicon is weak, taking the characteristic behavior of simple metals. Increasing the film thickness, the growth mode is one layer, completed with about 2 Å of Te nominal coverage, plus islanding, until the thickness reaches the value of about 10 Å, followed by coalescence of islands. When tellurium has completed a layer, the valence band surface states of silicon are quenched.

Room temperature chemical synthesis of highly oriented PbSe nanotubes based on negative free energy of formation

2011 ◽  
Vol 509 (41) ◽  
pp. 10066-10069 ◽  
Author(s):  
B.R. Sankapal ◽  
R.D. Ladhe ◽  
D.B. Salunkhe ◽  
P.K. Baviskar ◽  
V. Gupta ◽  
...  
Keyword(s):  
Free Energy ◽  
Chemical Synthesis ◽  
Room Temperature ◽  
Free Energy Of Formation ◽  
Energy Of Formation
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