scholarly journals Qualitative Picture of a New Mechanism for High-Tc Superconductors

2003 ◽  
Vol 17 (18n20) ◽  
pp. 3284-3292
Author(s):  
Chia-Ren Hu

Xu et al. observed enhanced Nernst effect and Iguchi et al. observed patched diamagnetism, both well above Tc in underdoped high-Tc superconductors (HTSCs). A new mechanism is proposed here, which seems to naturally explain, at least qualitatively, these observations, as well as the d-wave nature and continuity of pseudogap and pairing gap, the tunneling conductance above Tc, as well as T*(x), Tν(x), Tc(x), etc. This mechanism combines features of dynamic charged stripes, preformed pairs, and spin-bags: At appropriete doping levels, the doped holes (and perhaps also electrons) will promote the formation of anti-phase islands in short-range anti-ferromagnetic order. On the boundary of each such island reside two doped carriers; the unscreened Coulomb repulsion between them stabilizes the island's size. Superconductivity results when such "pre-formed pairs" Bose-condense.

1999 ◽  
Vol 13 (29n31) ◽  
pp. 3519-3524
Author(s):  
CHIA-REN HU

An update of a previous review on the many effects and novel consequences of the midgap states predicted to exist in d-wave superconductors is given. Four works done by the author and his collaborators are reviewed with a bit more details, but many works done by other researchers since the previous review are also included. These predictions, if not proven later to require modifications due to additional considerations, can help settle unequivocally the d-wave nature of pairing in high-Tc superconductors.


2004 ◽  
Vol 4 (6) ◽  
pp. 693-695 ◽  
Author(s):  
Kazumi Maki ◽  
Balázs Dóra ◽  
Attila Virosztek ◽  
András Ványolos

1998 ◽  
Vol 12 (29n31) ◽  
pp. 3027-3030
Author(s):  
Alexander B. Nazarenko ◽  
Ernst A. Pashitskii ◽  
Alexander E. Pashitskii

We show that the zero-bias conductance peak observed in tunnel and point junctions of cuprates can be a consequence of "unitary" elastic scattering of the carriers by non-magnetic impurities in the vicinity of the junction interface and d-wave symmetry of the order parameter.


1999 ◽  
Vol 13 (09n10) ◽  
pp. 1301-1306
Author(s):  
G. A. Ummarino ◽  
R. S. Gonnelli ◽  
C. Bravi ◽  
Masumi Inoue

A new possible indirect way of testing pair symmetry in high-Tc superconductors has been set up. The degree of intrinsic gap depression at Superconductor-Insulator [S-I] interfaces required to match Ic(T)Rn(T) data in HTS Josephson junctions depends on the pair symmetry of the material itself, so that an higher fraction of d-wave symmetry for the order parameter requires less gap depression, while an higher fraction of s-wave corresponds to a larger degree of gap depression. In order to obtain a general reference value for the intrinsic amount of gap depression at S-I interfaces the de Gennes condition has been used, and resulting reduced Ic(T)Rn(T) data have been calculated in the framework of a mixed (s+id)-wave pair symmetry for the depressed order parameter ranging from pure s to pure d-wave. This model has been tentatively applied to two junctions' made of very different HTSs: YBCO and BKBO, yielding a result of almost pure d-wave for YBCO and of pure s-wave for BKBO.


1989 ◽  
Vol 03 (12) ◽  
pp. 919-923 ◽  
Author(s):  
CHARLES P. ENZ

It is shown that at low temperatures, T≪TF, a general form of short-range s-d type interaction between two species of fermions leads to a resistivity law ρ∝Td−1 where d=2, 3 is the dimension of the system. In energy units T F is of the order of the bandwidths of the charge carriers which are assumed to be quasi-free. The calculation is based on a Boltzmann transition rate deduced from the two-body s-d type scattering matrix element. The consequences of making one of the fermions very heavy and of replacing it by a boson are also discussed.


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