AMPLIFICATION OF CURRENT SPIN POLARIZATION IN FERROMAGNETIC/ORGANIC SYSTEM WITH SPIN-RELATED INTERFACIAL RESISTANCES

2011 ◽  
Vol 25 (32) ◽  
pp. 4339-4345
Author(s):  
MINGXIA XIU ◽  
JUNFENG REN ◽  
CHUANKUI WANG ◽  
XIAOBO YUAN ◽  
GUICHAO HU
Keyword(s):  
Spin Polarization ◽  
Spin Diffusion ◽  
Organic Materials ◽  
Diffusion Theory ◽  
Contact Structures ◽  
Organic System ◽  
Ohm’S Law ◽  
Spin Polarized ◽  
Tunnel Barriers ◽  
Current Spin Polarization

Current spin polarization in ferromagnetic/organic system is theoretically studied based on the spin diffusion theory and Ohm's law, and the effects of the spin-related interfacial resistances on the spin-polarized injection are discussed. It is shown that the current spin polarization can be higher than the spin polarization of the ferromagnetic contact and may reach 100% at the interface by modulating the spin-related interfacial resistances. The proposed amplification scheme provides an efficient way to generate a highly spin-polarized current in organic materials because of the easy fabrication of ordered spin-related tunnel barriers at contact structures.

Spin polarization of polaron in quasi-one dimensional organic system

2015 ◽  
Vol 29 (02) ◽  
pp. 1450266 ◽  
Author(s):  
Hong Jiang ◽  
Chao Zhang ◽  
Xuening Hu ◽  
Guichao Hu ◽  
Shijie Xie
Keyword(s):  
Spin Polarization ◽  
Organic Materials ◽  
Orbit Coupling ◽  
Electron Interaction ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Organic System ◽  
Electron Phonon Coupling ◽  
Spin Polarized ◽  
Ssh Model

The spin polarization of polarons in quasi-1D organic materials has been investigated by using the extended Su–Schrieffer–Heeger (SSH) model with spin-orbit coupling. Results show that the polaron is partly spin polarized, and that the electron–electron interaction and spin-orbit coupling compete with each other during the formation of spin polarization. The dependence of spin polarization on electron–phonon coupling is also revealed. Our results demonstrate that spin polarization is well correlated with polaron localization, thus providing useful guidance for exploring magnetic effects in organic materials.

The Spin-Dependent Electronical Conductivity of Polarons in the Spin Polarized Organic Semiconductor

2011 ◽  
Vol 284-286 ◽  
pp. 2045-2048
Author(s):  
Xiao Qing Zhao ◽  
Yi Lin Mi ◽  
Feng Yan Liu
Keyword(s):  
Electrical Conductivity ◽  
Electric Field ◽  
Spin Polarization ◽  
Organic Semiconductor ◽  
Field Region ◽  
Spin Dependence ◽  
Spin Polarized ◽  
Spin Polarons ◽  
Current Spin Polarization ◽  
Match Level

The spin-dependent electronical conductivity of polarons is studied in the spin polarized organic semiconductor .It is found that the spin dependence of the electronical conductivity is induced by the spin polarization of the organic semiconductor, for the spin polarization makes the up-spin and the down-spin polarons have different density, which generates the spin-dependent electronocal conductivity. The spin-dependent electrical conductivity can be directly affected by the match level of conductivities s0/sf at the interface of the FM/OSE. Moreover, the current spin polarization in the organic semiconductor can be strengthened by the electric-field in the low-electric-field region .

High Spin Polarization of Conduction Band Electrons in GaAs-GaAsP Strained Layer Superlattice Fabricated as a Spin-Polarized Electron Source

2004 ◽  
Vol 43 (6A) ◽  
pp. 3371-3375 ◽  
Author(s):  
Tetsuya Matsuyama ◽  
Hisaya Takikita ◽  
Hiromichi Horinaka ◽  
Kenji Wada ◽  
Tsutomu Nakanishi ◽  
...  
Keyword(s):  
Conduction Band ◽  
Spin Polarization ◽  
High Spin ◽  
Electron Source ◽  
Strained Layer ◽  
Spin Polarized ◽  
High Spin Polarization ◽  
Strained Layer Superlattice

Temperature-controllable spin-polarized current and spin polarization in a Rashba three-terminal double-quantum-dot device

2013 ◽  
Vol 22 (5) ◽  
pp. 057306
Author(s):  
Xue-Kun Hong ◽  
Xi-Feng Yang ◽  
Jin-Fu Feng ◽  
Yu-Shen Liu
Keyword(s):  
Quantum Dot ◽  
Spin Polarization ◽  
Double Quantum ◽  
Double Quantum Dot ◽  
Spin Polarized

scholarly journals Spin Polarized Transport in an AC-Driven Quantum Curved Nanowire

2011 ◽  
Vol 2011 ◽  
pp. 1-5 ◽  
Author(s):  
Walid A. Zein ◽  
Nabil A. Ibrahim ◽  
Adel H. Phillips
Keyword(s):  
Spin Polarization ◽  
Small Strain ◽  
Oscillatory Behavior ◽  
Tunneling Magnetoresistance ◽  
Mass Approximation ◽  
Wide Range ◽  
Spin Polarized ◽  
Polarized Transport ◽  
The One ◽  
Spin Polarized Transport

Using the effective-mass approximation method, and Floquet theory, we study the spin transport characteristics through a curved quantum nanowire. The spin polarization, P, and the tunneling magnetoresistance, TMR, are deduced under the effect of microwave and infrared radiations of wide range of frequencies. The results show an oscillatory behavior of both the spin polarization and the tunneling magnetoresistance. This is due to Fano-type resonance and the interplay between the strength of spin-orbit coupling and the photons in the subbands of the one-dimensional nanowire. The present results show that this investigation is very important, and the present device might be used to be a sensor for small strain in semiconductor nanostructures and photodetector.

scholarly journals Scanning-Ion Microscopy with Polarization Analysis (Simpa)

1993 ◽  
Vol 313 ◽  
Author(s):  
N. J. Zheng ◽  
C. Rau
Keyword(s):  
High Resolution ◽  
Spin Polarization ◽  
Imaging Technique ◽  
Ion Beam ◽  
Polarization Analysis ◽  
Polarized Electrons ◽  
Magnetic Structures ◽  
Magnetic Imaging ◽  
Spin Polarized ◽  
Ion Microscopy

ABSTRACTWe have developed a novel, high-resolution magnetic imaging technique, scanning-ion microscopy with polarization analysis (SIMPA). In SIMPA, a highly-focused, scanning Ga+ ion beam is used to excite spin-polarized electrons at surfaces of ferromagnetic Materials. By Measuring the intensity and the spin polarization of the emitted electrons using a newly developed, compact mott polarimeter, topographic and magnetic images of magnetic structures are obtained. We report on first SIMPA studies on single-crystalline Fe samples.

Spin-polarization effects in Cherenkov radiation from electrons

2020 ◽  
Vol 98 (7) ◽  
pp. 660-663
Author(s):  
A.A. Peshkov
Keyword(s):  
Spin Polarization ◽  
Cherenkov Radiation ◽  
Stokes Parameters ◽  
Electron Spin Polarization ◽  
Polarized Electrons ◽  
Small Component ◽  
Polarization Effects ◽  
Spin Polarized ◽  
Linearly Polarized ◽  
Spin Polarization Effects

A quantum electrodynamical theory of Cherenkov radiation emitted by spin-polarized electrons moving in an isotropic medium is developed within the density matrix framework. Special attention is paid to the polarization properties of the emitted photons described by means of Stokes parameters. It is demonstrated that, although the Cherenkov radiation is primarily linearly polarized in the plane containing the direction of observation and the path of the electrons, the photons may have a small component of circular polarization of the order of 3 × 10−6 for electron kinetic energy of 500 keV due to the initial electron spin polarization, whose existence can be confirmed by sensitive measurements in the future.

SPIN-DEPENDENT QUANTUM SIZE EFFECTS IN THE ELECTRON REFLECTIVITY OF ULTRATHIN FERROMAGNETIC CRYSTALS

2002 ◽  
Vol 09 (03n04) ◽  
pp. 1485-1491 ◽  
Author(s):  
R. ZDYB ◽  
E. BAUER
Keyword(s):  
Spin Polarization ◽  
Size Effects ◽  
Mean Free Path ◽  
Quantum Size Effects ◽  
Quantum Size ◽  
Spin Polarized ◽  
Size Contrast ◽  
Magnetic Asymmetry ◽  
Inelastic Mean Free Path

We have studied the spin-dependent quantum size effects in the reflection of 0–20 eV electrons from 2–10-ML-thick Fe microcrystals grown in situ on a W(110) surface in a spin-polarized low energy electron microscope. The goal is to obtain a better understanding of the magnetic ("asymmetry") image contrast and of the limits of spin polarization devices based on the quantum size contrast. The contrast is interpreted in terms of the band structure and of the spin-dependent inelastic mean free path. For the figure of merit of spin polarization devices, an upper limit of 5 × 10-2 is obtained.

Sign in / Sign up

Export Citation Format

Share Document