EFFECT OF LASER ON THE NONPARABOLICITY OF THE CONDUCTION BAND AND HYDROGENIC IMPURITY STATES IN A SEMICONDUCTOR QUANTUM WELL

2011 ◽  
Vol 25 (13) ◽  
pp. 1785-1790 ◽  
Author(s):  
A. MERWYN JASPER D. REUBEN ◽  
P. NITHIANANTHI ◽  
C. RAJA MOHAN ◽  
K. JAYAKUMAR
Keyword(s):  
Quantum Well ◽  
Conduction Band ◽  
Binding Energies ◽  
Hydrogenic Impurity ◽  
Mass Approximation ◽  
Hydrogenic Donor ◽  
Semiconductor Quantum Well ◽  
Finite Barrier ◽  
Donor States ◽  
Limiting Values

The effect of laser on the nonparabolicity of the conduction band for hydrogenic donor states like 1s, 2s, 2p± and 2p0 in a GaAs/Al x Ga 1-x As quantum well have been computed in a finite barrier model using variational principle in the effective mass approximation. The limiting values of the ground state and few excited state binding energies for a laser dressed-donor have been obtained. The results are presented and discussed.

scholarly journals Diamagnetic Susceptibility of a Confined Donor in a Quantum Dot with Different Confinements

2009 ◽  
Vol 1 (2) ◽  
pp. 200-208 ◽  
Author(s):  
A. J. Peter ◽  
J. Ebenezar
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Harmonic Oscillator ◽  
Diamagnetic Susceptibility ◽  
Binding Energies ◽  
Hydrogenic Impurity ◽  
Mass Approximation ◽  
Quantum Well Wire ◽  
Hydrogenic Donor ◽  
System Geometry

The binding energies of shallow hydrogenic impurity in a GaAs/GaAlAs quantum dot with spherical confinement, harmonic oscillator-like and rectangular well-like potentials are calculated as a function of dot radius using a variational procedure within the effective mass approximation. The calculations of the binding energy of the donor impurity as a function of the system geometry have been investigated. A comparison of the eigenstates of a hydrogenic impurity in all the confinements of dots is discussed in detail.  We have computed and compared the susceptibility for a hydrogenic donor in a spherical confinement, harmonic oscillator-like and rectangular well-like potentials for a finite QD and observe a strong influence of the shape of confining potential and geometry of the dot on the susceptibility. Keywords: Quantum dot; Quantum well wire; Quantum well; Diamagnetic susceptibility; Donor impurity. © 2009 JSR Publications. ISSN: 2070-0237 (Print); 2070-0245 (Online). All rights reserved. DOI: 10.3329/jsr.v1i2.1184   

Doping effect on exciton binding energy in semiconductor quantum well

2017 ◽  
Vol 31 (03) ◽  
pp. 1750004
Author(s):  
Yongkai Li ◽  
Shuangbo Yang
Keyword(s):  
Binding Energy ◽  
Quantum Well ◽  
Quantum Wells ◽  
Doping Concentration ◽  
Binding Energies ◽  
The Self ◽  
Mass Approximation ◽  
Self Consistent ◽  
Semiconductor Quantum Well ◽  
Si Doped

By solving the Schrödinger equation and Poisson’s equation self-consistently, we have calculated the electronic structure for Si-doped GaAs/Al[Formula: see text]Ga[Formula: see text]As quantum well system at [Formula: see text] K in the effective mass approximation. We obtain the self-consistent potentials, eigen-envelope functions and the subband energies for different doping concentrations and for different thicknesses of the doping layer. The binding energies of exciton in GaAs/Al[Formula: see text]Ga[Formula: see text]As quantum wells under different doping conditions are calculated by using a variational method. And the variation of the binding energy with the thickness of the doped layer and the doping concentration is analyzed. It is found that at a given doping concentration, with the increase of thickness of the doping layer, the self-consistent potential becomes wider and more shallow, the binding energy of exciton decreases. At a given thickness of the doping layer, with the increase of the doping concentration, the self-consistent potential becomes narrower and deeper, the binding energy of exciton increases.

Binding Energies and Linear and Nonlinear Optical Properties of a Donor Impurity in a Three-Dimensional Quantum Pseudodot

2013 ◽  
Vol 68 (12) ◽  
pp. 744-750 ◽  
Author(s):  
Muharrem Kirak ◽  
Sait Yilmaz
Keyword(s):  
Optical Properties ◽  
Nonlinear Optical ◽  
Chemical Potential ◽  
Refractive Index Change ◽  
Three Dimensional ◽  
Great Influence ◽  
Binding Energies ◽  
Nonlinear Optical Properties ◽  
Hydrogenic Impurity ◽  
Mass Approximation

A theoretical study of the electronic properties of the ground state and excited states and the linear and the third-order nonlinear optical properties (i. e., absorption coefficients and refractive indices) in a spherical GaAs pseudodot system is reported. The variational procedure has been employed in determining sublevel energy eigenvalues and their wave functions within the effective mass approximation. Our results indicate that the chemical potential of the electron gas and the minimum value of the pseudoharmonic potential have a great influence on the electrical and optical properties of hydrogenic impurity states. Also, we have found that the magnitudes of the absorption coefficient and the refractive index change of the spherical quantum dot increase for transitions between higher levels.

OPTICAL INTERSUBBAND TRANSITIONS AND BINDING ENERGIES OF DONOR IMPURITIES IN Ga1-xInxNyAs1-y/GaAs/Al0.3Ga0.7As QUANTUM WELL UNDER THE ELECTRIC FIELD

2012 ◽  
Vol 26 (06) ◽  
pp. 1250013 ◽  
Author(s):  
F. UNGAN ◽  
U. YESILGUL ◽  
E. KASAPOGLU ◽  
H. SARI ◽  
I. SOKMEN
Keyword(s):  
Binding Energy ◽  
Optical Absorption ◽  
Electric Field ◽  
Quantum Well ◽  
Applied Electric Field ◽  
Shallow Donor ◽  
Binding Energies ◽  
Intersubband Transitions ◽  
Mass Approximation ◽  
Intersubband Optical Absorption

The effects of nitrogen and indium mole concentration on the intersubband optical absorption for (1–2) transition and the binding energy of the shallow-donor impurities in a Ga 1-x In x N y As 1-y/ GaAs / Al 0.3 Ga 0.7 As quantum well under the electric field is theoretically calculated within the framework of the effective-mass approximation. Results are obtained for several concentrations of nitrogen and indium, and the applied electric field. The numerical results show that the intersubband transitions and the impurity binding energy strongly depend on the nitrogen and indium concentrations.

Donor States in Spherical GaAs-Ga1-xAlxAs Quantum Dots

1997 ◽  
Vol 11 (15) ◽  
pp. 673-679 ◽  
Author(s):  
Ecaterina C. Niculescu ◽  
Ana Niculescu
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Effective Mass ◽  
Coulomb Potential ◽  
Adjustable Parameter ◽  
Binding Energies ◽  
Central Cell ◽  
Shallow Donors ◽  
Mass Approximation ◽  
Donor States

The effect of the central cell correction on the binding energies of shallow donors in a spherical GaAs-Ga 1-x Al x As quantum dot is studied. The effective-mass approximation within a variational scheme is adopted and central cell corrections are calculated by using a Coulomb potential modified with an adjustable parameter. For small values of the radius of the dot large corrections are obtained for the shallow donors studied.

INFLUENCE OF PRESSURE ON THE DIAMAGNETIC SUSCEPTIBILITY OF HYDROGENIC DONOR IN SOME LOW-LYING EXCITED STATES IN A QUANTUM WELL

2007 ◽  
Vol 06 (01) ◽  
pp. 37-40 ◽  
Author(s):  
P. NITHIANANTHI ◽  
K. JAYAKUMAR
Keyword(s):  
Hydrostatic Pressure ◽  
Quantum Well ◽  
Effective Mass ◽  
Excited States ◽  
Diamagnetic Susceptibility ◽  
Mass Approximation ◽  
X Band ◽  
Hydrogenic Donor ◽  
Band Mixing ◽  
Band Crossing

The influence of Γ–X band crossing due to the applied hydrostatic pressure on the diamagnetic susceptibility (χ dia ) of a donor in low-lying excited states like 2s, 2p0, 2p± in a GaAs / Al x Ga 1-x As Quantum Well has been investigated in the effective mass approximation by considering the nonparabolicity of the conduction band. We notice that the effect of Γ–X band mixing is significant on χ dia of a donor lying in excited states. Moreover, the effect of non-parabolicity on χ dia is also predominant for lower well width region. The results are presented and discussed.

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