Effect of aluminum trace dimension on electro-migration failure in flip-chip package
2017 ◽
Vol 31
(07)
◽
pp. 1741002
A 3D model of flip-chip package is established and thermal–electrical coupling is analyzed. The effect of the width of Aluminum (Al) trace on electro-migration mechanism is also studied. Reducing rates of the hot-spot temperature, the max Joule heating, the max temperature gradient and the max current density are defined to research the effects of the Al trace thickness and the UBM thickness on electro-migration.