Study on aluminum concentration on optical and electrical properties of AZO thin films fabricated by ultrasonic spray pyrolysis

2019 ◽  
Vol 33 (22) ◽  
pp. 1950246
Author(s):  
Weiguang Yang ◽  
Miao He ◽  
Liu Yang ◽  
Ziliang Zhou ◽  
Xiaoying Zhang ◽  
...  

In this work, transparent and conductive Al-doped ZnO (AZO) nanofilms were prepared on quartz substrate by ultrasonic spray pyrolysis (USP) method. The effects of Al/Zn atomic ratios on the micro-structural, morphological, optical photoluminescence and electrical properties of AZO thin films were effectively investigated. All the prepared samples showed hexagonal wurtzite structure. The scanning electron microscopy (SEM) showed that the surface morphology of all samples changed with the substrate temperature. The average transmittance of all AZO samples was higher than 85% in the visible region. The photoluminescence (PL) spectrum of the samples showed that the near band edge emission in PL spectra shifted to shorter wavelengths with increasing Al-doped concentration. The lowest sheet resistance was obtained for the samples prepared with 4% at. Al-doped value. The electrical conductivity of AZO films was improved by Al doping, which allowed their use as optoelectronic materials.

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
Ebru Gungor ◽  
Tayyar Gungor

Using a modified ultrasonic spray pyrolysis (USP) system, ZnO thin films were deposited on the substrate moved back and forth (ZO1) and rotated (ZO3) as well as fixed (ZO2) in the conventional USP technique. Prepared thin films are pure ZnO with a preferred crystalline orientation of (0 0 2) in the hexagonal wurtzite structure. Diffraction angle shift implies a decrease lattice parameter alongc-axis anda-axis 0.2% and 0.3%, respectively. Maximum strain has been found for ZO1 which is about (−) 0.17%. These strain values show that presence of compressive strain due to moving substrates as depositing ZnO films. The film deposition process on the rotated quartz substrate is provided to obtain the thinner film. The grain size and root-mean- square value of roughness increase with thickness. Strong UV emission was observed at ∼390 nm assigned to the band gap transition from photoluminescence measurements. Energy shifted about 39 meV for ZO3 sample with respect to that of ZO2 film deposited in conventional USP system. This behaviour is confirmed with (002) diffraction peak shifting. So, the compressed lattice will provide a wider band gap for these films.E2phonon frequency values have not given a considerable shifting.


2011 ◽  
Vol 474-476 ◽  
pp. 998-1001
Author(s):  
Xiao Zhang ◽  
Hua Wang ◽  
Ji Wen Xu ◽  
Ling Yang ◽  
Ming Fang Ren

In2S3 thin films have been prepared on heated glass substrates by ultrasonic spray pyrolysis method. Structure, surface morphology and properties of films with different S/In ratios have been investigated. XRD analysis demonstrated that as-prepared In2S3 thin films have a preferential orientation along the (220) direction and no other phases are observed. Uniformity, density, crystallinity of films were significantly affected by S/In ratios, which influence photoelectric properties of the films. In2S3 thin film is close to standard stoichiometric composition when S/In ratio is 2. Optical transmittance of films is over 90% in the visible region and its energy band gap come up to 2.46eV.


Molecules ◽  
2019 ◽  
Vol 24 (15) ◽  
pp. 2797 ◽  
Author(s):  
Deyu ◽  
Muñoz-Rojas ◽  
Rapenne ◽  
Deschanvres ◽  
Klein ◽  
...  

Aluminum-doped tin oxide (SnO 2:Al) thin films were produced by an ultrasonic spray pyrolysis method. The effect of aluminum doping on structural, optical, and electrical properties of tin oxide thin films synthesized at 420 ∘C was investigated. Al doping induced a change in the morphology of tin oxide films and yielded films with smaller grain size. SnO 2 thin films undergo a structural reordering and have a texture transition from (301) to (101), and then to (002) preferred cristallographic orientation upon Al doping. The lattice parameters (a and c) decreases with Al doping, following in a first approximation Vegard’s law. The optical transmission does not change in the visible region with an average transmittance value of 72–81%. Conversely, in the near infrared (NIR) region, the plasmon frequency shifts towards the IR region upon increasing Al concentration in the grown films. Nominally undoped SnO 2 have a conductivity of ∼1120 S/cm, which is at least two orders of magnitude larger than what is reported in literature. This higher conductivity is attributed to the Cl- ions in the SnCl 4.5(H 2 O) precursor, which would act as donor dopants. The introduction of Al into the SnO 2 lattice showed a decrease of the electrical conductivity of SnO 2 due to compensating hole generation. These findings will be useful for further studied tackling the tailoring of the properties of highly demanded fluorine doped tin oxide (FTO) films.


2018 ◽  
Vol 32 (29) ◽  
pp. 1850351 ◽  
Author(s):  
Weiguang Yang ◽  
Zhen Yang ◽  
Ding Li ◽  
Xiaoying Zhang ◽  
Ziliang Zhou ◽  
...  

In this paper, ZnO nanofilms are prepared on quartz substrate by ultrasonic spray pyrolysis (USP) technology. The effects of substrate temperature and deposition time on the micro-structural, morphological and optical properties of ZnO thin films are investigated in detail. Measurements indicate that the growth process of the film is as follows: Micro grains accumulation [Formula: see text] grains’ expansion [Formula: see text] grow into certain nanostructures under different temperature. Nanostructures of the film are as follows: Irregular broken hexagonal-like structure ([Formula: see text]C); coexisting of broken hexagonal- and sheet-like structure (450–500[Formula: see text]C); regular closed packed sheets-like structure ([Formula: see text]C). In addition, all results show that RMS roughness of the films is less than 20 nm. Moreover, the visible transmittance of these samples is higher than 90%. Which display that ZnO films with low roughness and excellent optical properties can be also fabricated by low-cost USP method.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Inti Zumeta-Dubé ◽  
José Manuel García Rangel ◽  
Jorge Roque ◽  
Issis Claudette Romero-Ibarra ◽  
Mario Fidel García Sánchez

AbstractThe strong facet-dependent performance of glass-supported CeO2 thin films in different applications (catalysis, smart windows, etc.) has been the target of diverse fundamental and technological approaches. However, the design of accurate, cost-effective and scalable methods with the potential for large-area coverage that produce highly textured glass-supported CeO2 thin films remains a technological challenge. In the present work, it is demonstrated that under proper tuning conditions, the ultrasonic spray pyrolysis technique enables one to obtain glass-supported polycrystalline CeO2 films with noticeable texture along both the (100) and (111) directions, as well as with randomly oriented crystallites (no texture). The influence of flow rates, solution molarity, and substrate temperature on the texture and morphological characteristics, as well as optical absorption and Raman response of the deposited films, is evaluated. The obtained results are discussed on the basis of the combined dependence of the CeO2-exposed surfaces on the thermodynamic stability of the corresponding facets and the reaction kinetics, which modulate the crystallite growth direction.


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