scholarly journals Raman Scattering in Cuprate Superconductors

1997 ◽  
Vol 11 (18) ◽  
pp. 2093-2118 ◽  
Author(s):  
Thomas Peter Devereaux ◽  
Arno Paul Kampf
Keyword(s):  
Low Temperature ◽  
Raman Scattering ◽  
Raman Spectra ◽  
Cuprate Superconductors ◽  
Energy Gap ◽  
Low Frequency ◽  
Temperature Behavior ◽  
Doping Dependence ◽  
Electronic Raman Scattering ◽  
Effects Of Disorder

A theory for electronic Raman scattering in the cuprate superconductors is presented with a specific emphasis on the polarization dependence of the spectra which can infer the symmetry of the energy gap. Signatures of the effects of disorder on the low frequency and low temperature behavior of the Raman spectra for different symmetry channels provide detailed information about the magnitude and the phase of the energy gap. Properties of the theory for finite T will be discussed and compared to recent data concerning the doping dependence of the Raman spectra in cuprate superconductors, and remaining questions will be addressed.

scholarly journals Low Frequency and Low Temperature Behavior of Si, Solar Cell by AC Impedance Measurements

2012 ◽  
Vol 19 ◽  
pp. 183-191 ◽  
Author(s):  
K. Al Abdullah ◽  
Faisal Al Alloush ◽  
M.J. Termanini ◽  
C. Salame
Keyword(s):  
Solar Cell ◽  
Low Temperature ◽  
Low Frequency ◽  
Ac Impedance ◽  
Temperature Behavior ◽  
Impedance Measurements ◽  
Si Solar Cell

scholarly journals Terahertz Time-Domain Spectroscopy and Low-Frequency Raman Scattering of Crystalline and Glassy Pharmaceutical Indapamide

2015 ◽  
Vol 46 ◽  
pp. 16-22 ◽  
Author(s):  
Yukiko Kobayashi ◽  
Tomohiko Shibata ◽  
Tatsuya Mori ◽  
Seiji Kojima
Keyword(s):  
Raman Scattering ◽  
Raman Spectra ◽  
Imaginary Part ◽  
Time Domain ◽  
Low Frequency ◽  
Dielectric Constants ◽  
Coupling Constants ◽  
Exclusion Principle ◽  
Terahertz Time Domain Spectroscopy ◽  
Time Domain Spectroscopy

We performed terahertz time-domain spectroscopy and low-frequency Raman scattering on crystalline and glassy states of pharmaceutical indapamide (IND). We have determined the real and imaginary part of the complex dielectric constants and the imaginary part of the Raman susceptibility in the THz region. Several phonon peaks have been observed in the crystalline IND and the mutual exclusion principle of infrared and Raman spectroscopy holds in the measured frequency range. In a glassy state of IND, a broad absorption peak has been observed in both the THz and the Raman spectra with different spectral shape, and this disagreement indicates that the far-infrared and Raman light-vibration coupling constants are different in the glassy IND. A clear boson peak has been observed in the Raman spectra of the glassy IND at about 0.5 THz.

Electronic Raman scattering of Tl-2201 and Tl-2223 and the symmetry of the energy gap

1996 ◽  
Vol 223-224 ◽  
pp. 484-489 ◽  
Author(s):  
L.V Gasparov ◽  
P Lemmens ◽  
M Brinkmann ◽  
A Hoffmann ◽  
N.N Kolesnikov ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Energy Gap ◽  
Electronic Raman Scattering

RESONANCE BAND IN Ge/Si SUPERLATTICE STUDIED BY RAMAN SCATTERING

2003 ◽  
Vol 02 (04n05) ◽  
pp. 363-368
Author(s):  
C. H. LIN ◽  
B. CHEN ◽  
C. T. CHIA ◽  
H. H. CHENG
Keyword(s):  
Raman Scattering ◽  
Raman Spectra ◽  
Low Frequency ◽  
Interface Layer ◽  
Laser Line ◽  
Continuous Emission ◽  
Diode Pump ◽  
Resonance Band ◽  
Raman Measurement ◽  
532 Nm

We have performed the low-frequency Raman measurement of MBE grown Ge/Si superlattice. Raman spectra were excited by He–Ne laser, and diode-pump YAG 532 nm laser, as well as several lines from Ar+ laser. Folded acoustic phonons of the Ge/Si superlattice were clearly found. The resonant effects were observed for the Ge/Si superlattices while the Raman spectra excited by the laser lines around 500 nm. A clearly resonance enhanced phonon signals are found for the spectrum excited by 532 nm laser line, and continuous emission can be clearly seen. By the continuous emission theory, we carried out a resonance band at 2.32 eV, which is closed to the E1 band of Germanium. Few weak resonant bands were also found near 2.32 eV, which may be related to confined band or the resonance band of interface layer between Si and Ge .

A Study of the Temperature-Dependence of Low-Frequency, Raman-Active Phonons in Stage-2 Graphite-K and Graphite-Rb Intercalation Compounds

1982 ◽  
Vol 20 ◽  
Author(s):  
J. Giergiel ◽  
P. C. Eklund ◽  
R. Al-Jishi ◽  
G. Dresselhaus
Keyword(s):  
Phase Transitions ◽  
Raman Scattering ◽  
Temperature Dependence ◽  
Raman Spectra ◽  
Lattice Dynamics ◽  
Low Frequency ◽  
Frequency Region ◽  
Intercalation Compounds ◽  
Dynamics Model ◽  
Scattering Study

ABSTRACTWe report results from a Raman scattering study of stage 2 Graphite-Rb and Graphite-K in the low frequency region (ω < 150 cm-1) as a function of temperature (80K < T < 300K). Four features are seen in the 80K spectra and are interpreted in terms of a Born– von Kármán lattice dynamics model. The temperature-dependence of the Raman spectra is discussed in connection with reported phase transitions in stage 2 alkalimetal graphite compounds.

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