PERSISTENT PHOTOCONDUCTIVITY IN La0.7CaxBa1-xMnO3 THIN FILMS

1999 ◽  
Vol 13 (29n31) ◽  
pp. 3786-3791 ◽  
Author(s):  
R. CAURO ◽  
J. C. GRENET ◽  
A. GILABERT ◽  
M. G. MEDICI
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Visible Light ◽  
Low Temperatures ◽  
Transport Mechanism ◽  
Persistent Photoconductivity ◽  
Temperature Range ◽  
Insulator Metal Transition ◽  
First Time

We report, for the first time, experiments of persistent photoconductivity (PPC) in thin films of manganese perovskites La 0.7 Ca 0.25 Ba 0.05 MnO 3 and La 0.7 Ca 0.2 Ba 0.1 MnO 3 showing a persistent decrease of a few percent of the resistance after illumination with visible light. These persistent photoinduced effects are seen only in a range of low temperatures (<25 K) well below the insulator-metal transition at respectively T c=173 K and T c=120 K. In this low temperature range, the transport mechanism is rather of activated hopping type regime.

Dynamic Viscosity of Compressed Water to 10 Kilobar and Steam to 1500°C

1969 ◽  
Vol 11 (2) ◽  
pp. 189-205 ◽  
Author(s):  
E. A. Bruges ◽  
M. R. Gibson
Keyword(s):  
Gaseous Phase ◽  
Dynamic Viscosity ◽  
Low Temperatures ◽  
Pressure Range ◽  
Low Pressure ◽  
Temperature Range ◽  
Inversion Temperature ◽  
Pressure Steam ◽  
Correlating Equations ◽  
First Time

Equations specifying the dynamic viscosity of compressed water and steam are presented. In the temperature range 0-100cC the location of the inversion locus (mu) is defined for the first time with some precision. The low pressure steam results are re-correlated and a higher inversion temperature is indicated than that previously accepted. From 100 to 600°C values of viscosity are derived up to 3·5 kilobar and between 600 and 1500°C up to 1 kilobar. All the original observations in the gaseous phase have been corrected to a consistent set of densities and deviation plots for all the new correlations are given. Although the equations give values within the tolerances of the International Skeleton Table it is clear that the range and tolerances of the latter could with some advantage be revised to give twice the existing temperature range and over 10 times the existing pressure range at low temperatures. A list of the observations used and their deviations from the correlating equations is available as a separate publication.

Low temperature charge carrier hopping transport mechanism in vanadium oxide thin films grown using pulsed dc sputtering

2009 ◽  
Vol 94 (22) ◽  
pp. 222110 ◽  
Author(s):  
S. S. N. Bharadwaja ◽  
C. Venkatasubramanian ◽  
N. Fieldhouse ◽  
S. Ashok ◽  
M. W. Horn ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Charge Carrier ◽  
Vanadium Oxide ◽  
Transport Mechanism ◽  
Oxide Thin Films ◽  
Hopping Transport ◽  
Dc Sputtering ◽  
Pulsed Dc ◽  
Vanadium Oxide Thin Films

scholarly journals Cu2ZnSn(S,Se)4 thin-films prepared from selenized nanocrystals ink

RSC Advances ◽  
2019 ◽  
Vol 9 (32) ◽  
pp. 18420-18428 ◽  
Author(s):  
R. Aruna-Devi ◽  
M. Latha ◽  
S. Velumani ◽  
J. Santos-Cruz ◽  
Banavoth Murali ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Heating Up ◽  
First Time ◽  
Temperature Heating

For the first time, CZTS ink was formulated using low-temperature heating up synthesis of NCs.

Giant negative electrocaloric effect in antiferroelectric PbZrO3 thin films in an ultra-low temperature range

2019 ◽  
Vol 7 (3) ◽  
pp. 617-621 ◽  
Author(s):  
Mengyao Guo ◽  
Ming Wu ◽  
Weiwei Gao ◽  
Buwei Sun ◽  
Xiaojie Lou
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Electrocaloric Effect ◽  
Temperature Range

Antiferroelectric thin films have demonstrated an excellent negative electrocaloric effect, and are potential candidates for future refrigeration applications.

Leakage mechanism of (Ba0.7Sr0.3)TiO3 thin films in the low-temperature range

2002 ◽  
Vol 81 (25) ◽  
pp. 4817-4819 ◽  
Author(s):  
Hao Yang ◽  
Kun Tao ◽  
Bin Chen ◽  
Xianggang Qiu ◽  
Bo Xu ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Temperature Range ◽  
Leakage Mechanism

The ferromagnetic domain structure of haematite

1968 ◽  
Vol 303 (1475) ◽  
pp. 525-529 ◽  
Keyword(s):  
Low Temperature ◽  
Single Crystals ◽  
Domain Structure ◽  
Low Temperatures ◽  
Remanent Magnetization ◽  
Temperature Transition ◽  
Small Temperature ◽  
Temperature Range ◽  
Ferromagnetic Domain ◽  
Synthetic Crystals

Observations are reported of the ferromagnetic domain structure of natural and synthetic single crystals, made at temperatures close to the low temperature transition with the aid of an acetone based magnetic colloid. The domain structure of the synthetic crystals was found to change radically over a small temperature range centred around –12 °C. These changes are correlated with the measured remanent magnetization. Fairly extensive colloid patterns were found on the natural crystals at low temperatures but when the natural crystals were annealed at 1200 °C this low temperature colloid structure was no longer found.

Thermogravimetric study of sequential carbonation and decarbonation processes over Na2ZrO3 at low temperatures (30–80 °C): relative humidity effect

RSC Advances ◽  
2016 ◽  
Vol 6 (71) ◽  
pp. 66579-66588 ◽  
Author(s):  
J. Arturo Mendoza-Nieto ◽  
Heriberto Pfeiffer
Keyword(s):  
Solid State ◽  
Relative Humidity ◽  
Low Temperature ◽  
Low Temperatures ◽  
Humidity Effect ◽  
Temperature Range ◽  
Thermogravimetric Study ◽  
Relative Humidity Effect

Na2ZrO3 was synthetized via solid-state and tested in a low temperature range (30–80 °C) for carbonation and decarbonation processes using RH values between 0 and 80%. Results confirm that it is possible to accomplish successively at least 8 cycles.

scholarly journals Electron-enriched thione enables strong Pb–S interaction for stabilizing high quality CsPbI3 perovskite films with low-temperature processing

2020 ◽  
Vol 11 (12) ◽  
pp. 3132-3140 ◽  
Author(s):  
Xiaojia Xu ◽  
Hao Zhang ◽  
Erpeng Li ◽  
Pengbin Ru ◽  
Han Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Low Temperatures ◽  
High Quality ◽  
Low Temperature Processing

A neutral molecular additive of 4(1H)-pyridinethione (4-PT) is used for growing high quality black-phase CsPbI3 thin films at low temperatures.

LOW TEMPERATURE CHARACTERISTIC OF GaAlAs TEMPERATURE SENSOR DIODE

2001 ◽  
Vol 15 (09n10) ◽  
pp. 319-322 ◽  
Author(s):  
SNEHADRI BIHARI OTA ◽  
JUAN BASCUÑÁN ◽  
SMITA OTA
Keyword(s):  
Low Temperature ◽  
Temperature Measurement ◽  
Temperature Sensor ◽  
Low Temperatures ◽  
Temperature Characteristic ◽  
Lake Shore ◽  
Temperature Range

We have measured the forward characteristics of a GaAlAs temperature sensor diode (Lake Shore) in the temperature range 10–70 K and for fixed current values between 10 nA to 500 μA. On the basis of certain extrapolations, we suggest that these diodes can be used for temperature measurement at at ultra low temperatures.

Notizen: Low Temperature Magnetic Susceptibility of Sm2(WO4)3

1975 ◽  
Vol 30 (12) ◽  
pp. 1783-1784 ◽  
Author(s):  
H.B. Lal ◽  
Naseeb Dar
Keyword(s):  
Magnetic Susceptibility ◽  
Low Temperature ◽  
Crystal Field ◽  
Low Temperatures ◽  
Magnetic Ordering ◽  
Magnetic Exchange ◽  
Temperature Range ◽  
Powder Samples

Abstract The magnetic susceptibility of powder samples of Sm2(WO4)3 has been measured in the temperature range 4.2 to 300 K. At low temperatures the measured values disagree with those calculated for Sm3+-ions using Van Vleck's theory. The high values below 100 K are assigned to magnetic exchange and dipol interactions. There might be magnetic ordering below 4.2 K. The effects of the crystal field and impurities have been shown to be unimportant.

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