Nanostructured Gold Thin Films: Young Modulus Measurement

2003 ◽  
Vol 10 (04) ◽  
pp. 571-575 ◽  
Author(s):  
M. C. Salvadori ◽  
A. R. Vaz ◽  
L. L. Melo ◽  
M. Cattani
Keyword(s):  
Thin Films ◽  
Beam Theory ◽  
Young Modulus ◽  
Atomic Force ◽  
Resonance Frequencies ◽  
Before And After ◽  
Nanostructured Gold ◽  
Modulus Measurement ◽  
Gold Thin Films ◽  
Bulk Elastic Modulus

We have uniformly coated the cantilever of an atomic force microscope (AFM) with gold thin films. These films are nanostructured with thickness going from 19 to 62 nm. The resonance frequencies of this cantilever have been measured, before and after the Au coatings. Taking into account these frequencies and the vibrating beam theory, we determined the Young modulus of the Au films, obtaining E2 = 69.1 ± 2.6 GPa , i.e. about 12% lower than the respective bulk elastic modulus.

scholarly journals The Physicochemical and Antibacterial Properties of Chitosan-Based Materials Modified with Phenolic Acids Irradiated by UVC Light

2021 ◽  
Vol 22 (12) ◽  
pp. 6472
Author(s):  
Beata Kaczmarek-Szczepańska ◽  
Marcin Wekwejt ◽  
Olha Mazur ◽  
Lidia Zasada ◽  
Anna Pałubicka ◽  
...  
Keyword(s):  
Thin Films ◽  
Antimicrobial Activity ◽  
Ferulic Acid ◽  
Phenolic Acid ◽  
Food Packaging ◽  
Antibacterial Properties ◽  
Force Microscopy ◽  
Atomic Force ◽  
Before And After

This paper concerns the physicochemical properties of chitosan/phenolic acid thin films irradiated by ultraviolet radiation with wavelengths between 200 and 290 nm (UVC) light. We investigated the preparation and characterization of thin films based on chitosan (CTS) with tannic (TA), caffeic (CA) and ferulic acid (FA) addition as potential food-packaging materials. Such materials were then exposed to the UVC light (254 nm) for 1 and 2 h to perform the sterilization process. Different properties of thin films before and after irradiation were determined by various methods such as Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), atomic force microscopy (AFM), differential scanning calorimeter (DSC), mechanical properties and by the surface free energy determination. Moreover, the antimicrobial activity of the films and their potential to reduce the risk of contamination was assessed. The results showed that the phenolic acid improving properties of chitosan-based films, short UVC radiation may be used as sterilization method for those films, and also that the addition of ferulic acid obtains effective antimicrobial activity, which have great benefit for food packing applications.

Enhanced Enzymatic Activity of Laccase (from Pycnoporus sanguineus CS43) Immobilized on Sputtered Nanostructured Gold Thin Films

2017 ◽  
Vol 17 (2) ◽  
pp. 939-946 ◽  
Author(s):  
Melissa Rodríguez-Delgado ◽  
Nancy Ornelas-Soto ◽  
Erick Martínez-Lorán ◽  
Carlos Hernandez-Luna ◽  
Alejandra García-García ◽  
...  
Keyword(s):  
Thin Films ◽  
Enzymatic Activity ◽  
Pycnoporus Sanguineus ◽  
Nanostructured Gold ◽  
Gold Thin Films

MEASUREMENT OF CRITICAL EXPONENTS OF NANOSTRUCTURED GOLD THIN FILMS

2003 ◽  
Vol 10 (06) ◽  
pp. 903-908 ◽  
Author(s):  
L. L. MELO ◽  
M. C. SALVADORI ◽  
M. CATTANI
Keyword(s):  
Thin Films ◽  
Critical Exponents ◽  
Growth Dynamics ◽  
Scanning Tunneling ◽  
Silicon Substrates ◽  
Tunneling Microscopy ◽  
Grain Sizes ◽  
Metal Plasma ◽  
Nanostructured Gold ◽  
Gold Thin Films

We have fabricated gold thin films by metal plasma ion deposition on silicon substrates. The roughness of these nanostructured films has been measured by scanning tunneling microscopy (STM) and we have determined the growth dynamics critical exponents. We have also measured the grain sizes as a function of the film thickness.

scholarly journals Effect of annealing temperature on optical and electrical properties of metallophthalocyanine thin films deposited on silicon substrate

2016 ◽  
Vol 34 (3) ◽  
pp. 676-683 ◽  
Author(s):  
R. Skonieczny ◽  
P. Popielarski ◽  
W. Bała ◽  
K. Fabisiak ◽  
K. Paprocki ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectra ◽  
Silicon Substrate ◽  
Thin Layers ◽  
Excitation Wavelength ◽  
Type Silicon ◽  
Atomic Force ◽  
Before And After ◽  
Evaporation Technique ◽  
Polarized Raman

AbstractThe cobalt phthalocyanine (CoPc) thin films (300 nm thick) deposited on n-type silicon substrate have been studied using micro-Raman spectroscopy, atomic force spectroscopy (AFM) and I-V measurement. The CoPc thin layers have been deposited at room temperature by the quasi-molecular beam evaporation technique. The micro-Raman spectra of CoPc thin films have been recorded in the spectral range of 1000 cm-1 to 1900 cm-1 using 488 nm excitation wavelength. Moreover, using surface Raman mapping it was possible to obtain information about polymorphic forms distribution (before and after annealing) of metallophthalocyanine (α and β form) from polarized Raman spectra. The I-V characteristics of the Au/CoPc/n-Si/Al Schottky barrier were also investigated. The obtained results showed that influence of the annealing process plays a crucial role in the ordering and electrical conductivity of the molecular structure of CoPc thin films deposited on n-type silicon substrate.

scholarly journals Optical Properties and Microstructure of TiNxOy and TiN Thin Films before and after Annealing at Different Conditions

Coatings ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 22 ◽  
Author(s):  
Hanan A. Abd El-Fattah ◽  
Iman S. El-Mahallawi ◽  
Mostafa H. Shazly ◽  
Waleed A. Khalifa
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Pure Titanium ◽  
Rf Magnetron Sputtering ◽  
Visible Range ◽  
Optical Absorbance ◽  
Atomic Force ◽  
Before And After ◽  
Tin Thin Films ◽  
Steel Substrates

TiN and TiNxOy thin films share many properties such as electrical and optical properties. In this work, a comparison is conducted between TiN (with and without annealing at 400 °C in air and vacuum) and TiNxOy thin films deposited by using RF magnetron sputtering with the same pure titanium target, Argon (Ar) flow rate, nitrogen flow rates, and deposition time on stainless steel substrates. In the case of TiNxOy thin film, oxygen was pumped in addition. The optical properties of the thin films were characterized by spectrophotometer, and Fourier transform infrared spectroscopy (FTIR). The morphology, topography, and structure were studied by scanning electron microscope (SEM), atomic force microscope (AFM), and X-ray diffraction (XRD). The results show that both thin films have metal-like behavior with some similarities in phases, structure, and microstructure and differences in optical absorbance. It is shown that the absorbance of TiN (after vacuum-annealing) and TiNxOy have close absorbance percentages at the visible range of light with an unstable profile, while after air-annealing the optical absorbance of TiN exceeds that of TiNxOy. This work introduces annealed TiN thin films as a candidate solar selective absorber at high-temperature applications alternatively to TiNxOy.

Dynamics of instability in plasmonic response of nanostructured gold thin films on ambient ageing

2020 ◽  
Vol 19 ◽  
pp. 100486
Author(s):  
Sudheer ◽  
C. Mukherjee ◽  
A.K. Sinha ◽  
S.K. Rai ◽  
V.R. Reddy ◽  
...  
Keyword(s):  
Thin Films ◽  
Nanostructured Gold ◽  
Gold Thin Films

Functionalization of indium-tin-oxide electrodes by laser-nanostructured gold thin films for biosensing applications

2015 ◽  
Vol 357 ◽  
pp. 1684-1691 ◽  
Author(s):  
Katarzyna Grochowska ◽  
Katarzyna Siuzdak ◽  
Jakub Karczewski ◽  
Gerard Śliwiński
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Electrodes ◽  
Nanostructured Gold ◽  
Gold Thin Films

The Effects of Kcn Etching on Cu-Rich Epitaxial CuInSe2 Thin Films

1996 ◽  
Vol 426 ◽  
Author(s):  
P. Fons ◽  
S. Nikl ◽  
A. Yamada ◽  
M. Nishitanp ◽  
T. Wada ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Region ◽  
Etching Time ◽  
Cation Sublattice ◽  
Epitaxial Thin Films ◽  
Near Surface ◽  
Force Microscopy ◽  
Atomic Force ◽  
Before And After ◽  
Integrated Intensity

AbstractA series of Cu-rich CuInSe2 epitaxial thin films were grown by molecular beam epitaxy on GaAs(001) substrates from elemental sources at a growth temperature of 450 °C. All samples were grown with an excess of Cu. Electron microprobe analysis (EPMA) indicated a Cu/ In ratio of about 2.1–2.6 in the as-grown films. Additionally, the Se/ (In+Cu) ratio was observed to be ∼0.95 indicating that the films were slightly Se poor. These Cu-rich samples were etched in a KCN solution for periods ranging from 30 seconds to 3 minutes. EPMA measurements indicated that the bulk Cu/ In ratio was reduced to ∼0.92 in all films regardless of etching time. Atomic force microscopy (AFM) was used to characterize the topology of each sample before and after etching. These measurements indicated that the precipitates present on the as-grown films were removed and large nearly isotropic holes were etched into the sample to a depth of over 1000 Å even for etching times as short as 30 seconds. The samples were also evaluated both before and after etching using a Phillips MRD diffractometer with parallel beam optics and a 18,000 watt Cu rotating anode X-ray source in the chalcopyrite [001], [101], and [112] directions. A peak was observed at ∼15 degrees in the [001] scan after etching consistant with the presence of the ordered vacancy compound, CuIn3Se5. Additionally the integrated intensity ratios of the chalcopyrite (202) reflection to the chalcopyrite (101) reflection ∝(fCu-fIn)2 along the [101] direction indicated the presence of a near-surface region containing cation sublattice disorder that was subsequently removed by the etching process.

Nanostructured Gold Thin Films Prepared by Pulsed Laser Deposition

2004 ◽  
Vol 19 (3) ◽  
pp. 950-958 ◽  
Author(s):  
Eric Irissou ◽  
Boris Le Drogoff ◽  
Mohammed Chaker ◽  
Michel Trudeau ◽  
Daniel Guay
Keyword(s):  
Thin Films ◽  
Kinetic Energy ◽  
Pulsed Laser Deposition ◽  
Crystallite Size ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Nanostructured Gold ◽  
The Mean ◽  
Gold Thin Films ◽  
Background Gas

A structural and morphological study of nanostructured gold thin films prepared by pulsed laser deposition in the presence of several inert background gases (Ar, He, and N2) and at various pressures (from 10 mTorr to 1 Torr) and target-to-substrate distances (from 1 to 10 cm) is presented. Structural and morphological analyses were undertaken using semiquantitative x-ray diffraction, scanning tunneling microscopy, and transmission electron microscopy. For each set of deposition conditions, the kinetic energy of the neutral gold species [Au(I)] present in the plasma plume was determined by time-of-flight emission spectroscopy and used to characterize the plasma dynamics. It is shown that all films exhibit a transition from highly [111] oriented to polycrystalline as the Au(I) kinetic energy decreases. The polycrystalline phase ratio is close to 0% for Au(I) kinetic energy larger than approximately 3.0 eV/atom and approximately 86 ± 10% for Au(I) kinetic energy smaller than approximately 0.30 eV/atom, irrespective of the background gas atmosphere. The mean crystallite size of both phases and the mean roughness of the films also follow a unique relation with the Au(I) kinetic energy, independently of the nature of the background gas, and nanocrystalline films with crystallite size as small as 12 nm are obtained for Au(I) kinetic energy smaller than 0.3 eV/atom.

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