AFM ANALYSIS OF QUANTUM DOT STRUCTURES INDUCED BY ION SPUTTERING WITH DIFFERENT TIPS

2003 ◽  
Vol 10 (06) ◽  
pp. 837-841
Author(s):  
M. XU ◽  
C. TEICHERT

With tips of different hardness, we analyzed the effect of the hardness and shape of the actual AFM tip on the measurement of the best GaSb quantum dot (QD) structures induced by low energy Ar + sputtering. The comparison indicated that the complete information on the detailed dot shape and order structure can be determined with the hard and good tip, while with the soft or worn tip some information on the dot height and shape cannot be obtained. Our results suggest that, in order to obtain the complete surface information, the high hardness and good AFM tip should be used for semiconductor QD structures.

2016 ◽  
Vol 18 (1) ◽  
pp. 458-465 ◽  
Author(s):  
Hisao Kiuchi ◽  
Takahiro Kondo ◽  
Masataka Sakurai ◽  
Donghui Guo ◽  
Junji Nakamura ◽  
...  

The well-controlled nitrogen doped graphite with graphitic nitrogen located in the zigzag edge and/or vacancy sites can be realized using the low energy nitrogen sputtering. The doping mechanism of nitrogen ions is also discussed.


2020 ◽  
Vol 38 (5) ◽  
pp. 053203 ◽  
Author(s):  
Yuriy Kudriavtsev ◽  
Rene Asomoza ◽  
Angelica Hernandez ◽  
Dmitry Yu. Kazantsev ◽  
Boris Ya. Ber ◽  
...  

Soft Matter ◽  
2010 ◽  
Vol 6 (12) ◽  
pp. 2834 ◽  
Author(s):  
Ning Chen ◽  
Anatoly A. Zinchenko ◽  
Yuka Yamazaki ◽  
Yuko Yoshikawa ◽  
Shizuaki Murata ◽  
...  

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