Concentration and Mobility of Electrons in n-GaAs/AlGaAs:Si Nanostructures under Uniaxial Compression in the Dark and After Illumination
2019 ◽
Vol 18
(03n04)
◽
pp. 1940028
Keyword(s):
Resistivity, Hall effect and quantum oscillations of magnetoresistance in a two-dimensional electron system at an n-GaAs/Al0.29Ga0.71As:Si heterointerface have been investigated under uniaxial compression up to 3.5 kbar along [110] direction in the dark and after illumination by infrared diode at 1.7 K. The observed persistent photoconductivity is connected with the excitation of deep DX centers in the active layer. The electron redistribution between the quantum well and the active layer explains pressure dependence of the electron mobility and concentration fixed after illumination.
1986 ◽
Vol 56
(19)
◽
pp. 2104-2106
◽
2002 ◽
Vol 57
(2-3)
◽
pp. 11
Keyword(s):
Keyword(s):